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公开(公告)号：US20230071868A1
公开(公告)日：2023-03-09
申请号：US17821347
申请日：2022-08-22
申请人： DISCO CORPORATION
发明人： Yoshiaki SHIMIZU
IPC分类号： H01L21/268 , B23K26/50
摘要： There is provided a diamond wafer dividing method used when the diamond wafer having a front surface along the {100} plane is divided at planned dividing lines along the direction. The dividing method includes a first modified layer forming step of forming a first modified layer at a linear first region along the planned dividing line, inside the diamond wafer, a second modified layer forming step of forming a second modified layer at a linear second region shifted from the first region in the width direction and the thickness direction with respect to the front surface, and a dividing step of dividing the diamond wafer along the planned dividing lines by giving a force to the diamond wafer in which the first modified layer and the second modified layer are formed.
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公开(公告)号：US20220305596A1
公开(公告)日：2022-09-29
申请号：US17526470
申请日：2021-11-15
发明人： Sunjoong GWAK , Suchang RYU
摘要： A worktable for laser processing includes a lower plate, internal blocks, and external blocks. The lower plate includes a first area, a second area surrounding the first area, and a third area surrounding the second area. The internal blocks are disposed on the lower plate in the first area and the external blocks are disposed on the lower plate in the third area. The external blocks surround the internal blocks.
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公开(公告)号：US20220285218A1
公开(公告)日：2022-09-08
申请号：US17194100
申请日：2021-03-05
申请人： SKY TECH INC.
发明人： JING-CHENG LIN , TSUNG-HUA HSIEH
IPC分类号： H01L21/78 , B23K26/50 , B23K26/08 , B23K26/402 , B23K26/16
摘要： The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.
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公开(公告)号：US20220238379A1
公开(公告)日：2022-07-28
申请号：US17648460
申请日：2022-01-20
申请人： DISCO CORPORATION
发明人： Kenji FURUTA
IPC分类号： H01L21/782 , B23K26/50 , H01L21/683
摘要： A wafer dividing method includes forming modified layers which will be starting points of division, integrally attaching an annular frame and the wafer together through a dicing tape, directing the wafer downward and expanding the dicing tape to divide, into individual device chips, the wafer along the modified layers formed along the streets, counting particles scattered at the time of division of the wafer by a particle counter disposed in a dust collection path set directly below the wafer, and determining, on the basis of the number of the particles, whether or not the modified layers have been properly formed, at the time of carrying out the dividing step.
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公开(公告)号：US11325860B2
公开(公告)日：2022-05-10
申请号：US16583204
申请日：2019-09-25
申请人： Apple Inc.
摘要： A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.
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公开(公告)号：US20210252635A1
公开(公告)日：2021-08-19
申请号：US17149103
申请日：2021-01-14
摘要： A flotation conveyance apparatus according to an embodiment conveys a substrate while floating the substrate by ejecting a gas to a lower surface of the substrate. The flotation conveyance apparatus includes an upper plate disposed on the substrate side including a plurality of ejecting ports for ejecting the gas and a lower plate disposed under the upper plate. Flow-paths for supplying the gas to the plurality of ejecting ports are provided on at least one of the upper plate and the lower plate.
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公开(公告)号：US10677741B2
公开(公告)日：2020-06-09
申请号：US16050319
申请日：2018-07-31
IPC分类号： G01N21/94 , H05H1/00 , B23K26/12 , B23K26/08 , B08B7/00 , B23K26/50 , G01N21/71 , G01J3/443 , B23K26/0622
摘要： Systems, methods, and devices of the various embodiments may enable simultaneous preparation of a substrate for adhesive bonding and detection of minute contaminants on the substrate. Various embodiments may enable detection of contaminants on a surface of a substrate while the surface of the substrate is being prepared for adhesive bonding by laser ablation. Various embodiments may provide an integrated laser treatment and measurement system.
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公开(公告)号：US20200017408A1
公开(公告)日：2020-01-16
申请号：US16583204
申请日：2019-09-25
申请人： Apple Inc.
摘要： A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.
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公开(公告)号：US10471536B2
公开(公告)日：2019-11-12
申请号：US15985821
申请日：2018-05-22
申请人： DISCO CORPORATION
发明人： Taiki Sawabe
IPC分类号： B23K26/00 , G01N21/55 , H01S3/00 , H01S3/10 , B23K26/50 , G01M11/00 , G01N21/3563 , B23K26/03 , B23K103/00
摘要： A reflectance detection method in which a workpiece is irradiated with a laser beam and reflectance is detected, irradiating, with a light amount H0, the workpiece with a laser beam with a first wavelength X1 shorter than a detection-target wavelength X and detecting a light amount H1 of reflected return light, irradiating the workpiece with a laser beam with a second wavelength X2 longer than the detection-target wavelength X with the light amount H0 and detecting a light amount H2 of reflected return light, and employing H calculated based on an expression shown below as the light amount of return light obtained when the workpiece is irradiated with the detection-target wavelength X and calculating reflectance obtained when the workpiece is irradiated with the detection-target wavelength X based on H/H0. H=H1+(H2−H1)×(X−X1)/(X2−X1)
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公开(公告)号：US20190326140A1
公开(公告)日：2019-10-24
申请号：US16342182
申请日：2017-10-10
发明人： Suk-Hwan CHUNG , Masashi MACHIDA
IPC分类号： H01L21/67 , B23K26/082 , B23K26/14 , B23K26/50
摘要： A laser processing apparatus includes: a scan moving unit which moves one or both of a workpiece and a laser beam; a laser beam irradiation unit which irradiates the workpiece with the laser beam; and a gas discharge unit which discharges at least a first gas to an irradiation area irradiated with the laser beam in the workpiece. The gas discharge unit has a rectifying surface at a position facing the workpiece during laser beam irradiation. The rectifying surface is provided with a first gas discharge port through which the first gas is discharged; and one or both of a second gas discharge port and a gas front-back suction port. The second gas discharge port discharges a second gas to the workpiece during laser beam irradiation on both outer sides of the first gas discharge port at least in the scanning direction.
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