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    PROCESS FOR THE PREPARATION OF A HALOGENOACETYL FLUORIDE AND ITS DERIVATIVES
    2.
    发明申请
    PROCESS FOR THE PREPARATION OF A HALOGENOACETYL FLUORIDE AND ITS DERIVATIVES 有权
    制备卤代甲酰氟及其衍生物的方法

    公开(公告)号：US20120190892A1

    公开(公告)日：2012-07-26

    申请号：US13386637

    申请日：2010-07-07

    申请人： Laurent Saint-Jalmes ,  Francois Metz

    发明人： Laurent Saint-Jalmes ,  Francois Metz

    IPC分类号： C07C51/363 ,  C07C53/48

    CPC分类号： C07C51/58 ,  C07C51/04 ,  C07C51/62 ,  C07C51/64 ,  C07C53/18 ,  C07C53/48

    摘要： The present invention relates to a method for preparing a halogenoacetyl fluoride and the derivatives thereof. The inventive method for preparing a halogenoacetyl fluoride acid is characterised in that said method includes: a step of preparing a halogenoacetyl halide by photo-oxidation of a halogenoethylene compound in conditions such that the transformation rate of the halogenoethylene compound into halogenoacetyl halide is no higher than 80%, producing a reaction mixture essentially including halogenoacetyl halide and the excess halogenoethylene compound; a step of partial fluorination of the mixture obtained by reacting the latter with hydrofluoric acid suitable for obtaining a mixture of halogenoacetyl fluoride and the excess halogenoethylene compound; a step of separating the halogenoacetyl fluoride and the excess halogenoethylene compound. The invention can be used, specifically, for preparing the trichloroacetyl fluoride used as an intermediate species in the production of trifluoroacetic acid.

    摘要翻译： 本发明涉及一种制备卤代乙酰氟及其衍生物的方法。 本发明的制备卤代乙酰氟酸的方法的特征在于所述方法包括：通过卤代乙烯化合物的光氧化制备卤代乙酰卤的步骤，使得卤代乙烯化合物转化为卤代乙酰卤的条件不高于 80％，产生基本上包括卤代乙酰卤和过量卤代乙烯化合物的反应混合物; 通过使后者与适于获得卤代乙酰氟和过量卤代乙烯化合物的混合物的氢氟酸反应获得的混合物的部分氟化步骤; 分离卤代乙酰氟和过量的卤代乙烯化合物的步骤。 本发明可以用于制备三氟乙酸生产中用作中间体的三氯乙酰氟。

    Etching gas
    10.
    发明授权
    Etching gas 有权
    蚀刻气体

    公开(公告)号：US09234133B2

    公开(公告)日：2016-01-12

    申请号：US14455128

    申请日：2014-08-08

    申请人： Central Glass Company, Limited

    发明人： Naoto Takada ,  Isamu Mori

    IPC分类号： H01L21/302 ,  C09K13/00 ,  H01L21/3065 ,  C07C53/48 ,  H01L21/311 ,  C23F1/12

    CPC分类号： C09K13/00 ,  C07C53/48 ,  C23F1/12 ,  H01L21/3065 ,  H01L21/31116

    摘要： Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr and the like, from CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HI, HBr, HCl, CO, NO, NH3, H2 and the like, or from CH4, CH3F, CH2F2 and CHF3. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF4 that places a burden on the environment.

    摘要翻译： 公开了提供含有CHF 2 COF的蚀刻气体。 蚀刻气体可以含有选自O 2，O 3，CO，CO 2，F 2，NF 3，Cl 2，Br 2，I 2，X F n中的至少一种气体作为添加剂（在该式中，X表示Cl，I或Br。 n表示从CH 4，C 2 H 2，C 2 H 4，C 2 H 6，C 3 H 4，C 3 H 6，C 3 H 8，H 1，CH 3，CH 3，CH 3，CH 3，CH 3， ，HBr，HCl，CO，NO，NH3，H2等，或来自CH4，CH3F，CH2F2和CHF3。 该蚀刻气体不仅具有优异的蚀刻性能，例如抗蚀剂的选择比和图案形貌，而且易于获得，并且基本上不产生对环境造成负担的CF4。