Reduction of metal oxide in a dual frequency etch chamber
    1.
    发明授权
    Reduction of metal oxide in a dual frequency etch chamber 失效
    在双频蚀刻室中还原金属氧化物

    公开(公告)号:US06547934B2

    公开(公告)日:2003-04-15

    申请号:US09082746

    申请日:1998-05-21

    IPC分类号: C25B500

    摘要: The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.

    摘要翻译: 本发明通常提供从基材表面去除金属氧化物,特别是铜氧化物和氧化铝的装置和方法。 首先,本发明消除了氧化铜从互连结构的底部溅射到互连部件的侧壁上,从而防止铜原子通过电介质材料的扩散和器件的劣化。 本发明还消除了铜氧化物溅射到腔室侧壁上,这可最终剥落并引起衬底上的缺陷。 从衬底表面还原金属氧化物的方法包括将衬底放置在等离子体处理室内,使包含氢气的处理气体流入室中,以及通过电感耦合将处理气体的等离子体保持在室内。 该方法优选使用双频蚀刻室进行,其中在处理气体流中进行调节,RF功率和排气泵送速度以消除氧化铜的溅射并使还原反应最大化。

    Nuclear waste separator
    3.
    发明授权

    公开(公告)号:US06203669B1

    公开(公告)日:2001-03-20

    申请号:US09275699

    申请日:1999-03-24

    申请人: Tihiro Ohkawa

    发明人: Tihiro Ohkawa

    IPC分类号: C25B500

    CPC分类号: G21F9/305 G21F9/06 G21F9/30

    摘要: A method and system for separating radioactive waste containing volatiles, into light ions and heavy ions, includes a loader/transporter for transferring the waste into a high vacuum environment in the chamber of a plasma processor. During this transfer, gases of the volatiles are released from the waste, collected in a holding tank, and subsequently ionized in the chamber. As the volatiles are ionized, the ions are directed by a magnetic field into contact with the waste to vaporize the waste. The waste vapors are then ionized in the plasma processor chamber to create a multi-species plasma which includes electrons, light ions and heavy ions. Within the chamber, the density of the multi-species plasma is established to be above its collision density in order to establish a substantially uniform velocity for all ions in the plasma. A nozzle accelerates the multi-species plasma to generate a fluid stream which is directed from the chamber toward an inertial separator. A magnetic field in the inertial separator effectively blocks electrons in the stream from entering the separator. On the other hand, the inertia of the various ions in the stream carry them into the separator where they are segregated into light ions and heavy ions according to their atomic weights. After segregation, the heavy ions are vitrified for subsequent disposal.

    Methods for altering the magnetic properties of materials and the materials produced by these methods
    4.
    发明授权
    Methods for altering the magnetic properties of materials and the materials produced by these methods 失效
    通过这些方法改变材料和材料的磁性能的方法

    公开(公告)号:US06469605B2

    公开(公告)日:2002-10-22

    申请号:US09871763

    申请日:2001-06-01

    IPC分类号: C25B500

    CPC分类号: H01Q3/44 Y10T428/12465

    摘要: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

    摘要翻译: 本发明涉及用于改变材料的磁特性和通过这些方法生产的新型材料的方法。 本发明的方法涉及将高电压高频火花应用于材料表面以改变材料的磁特性。 特别地,本发明可以应用于抗磁硅以产生铁磁火花处理硅。

    Methods for altering the magnetic properties of materials and the materials produced by these methods
    5.
    发明授权
    Methods for altering the magnetic properties of materials and the materials produced by these methods 失效
    通过这些方法改变材料和材料的磁性能的方法

    公开(公告)号:US06264801B1

    公开(公告)日:2001-07-24

    申请号:US09454560

    申请日:1999-12-07

    IPC分类号: C25B500

    CPC分类号: H01Q3/44 Y10T428/12465

    摘要: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

    摘要翻译: 本发明涉及用于改变材料的磁特性和通过这些方法生产的新型材料的方法。 本发明的方法涉及将高电压高频火花应用于材料表面以改变材料的磁特性。 特别地,本发明可以应用于抗磁硅以产生铁磁火花处理硅。