公开(公告)号：US06547934B2

公开(公告)日：2003-04-15

申请号：US09082746

申请日：1998-05-21

申请人： Barney M. Cohen ,  Gilbert Hausmann ,  Vijay Parkhe ,  Zheng Xu

发明人： Barney M. Cohen ,  Gilbert Hausmann ,  Vijay Parkhe ,  Zheng Xu

IPC分类号： C25B500

CPC分类号： H01J37/321 ,  H01J37/32165 ,  H01L21/31122

摘要： The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.

摘要翻译： 本发明通常提供从基材表面去除金属氧化物，特别是铜氧化物和氧化铝的装置和方法。 首先，本发明消除了氧化铜从互连结构的底部溅射到互连部件的侧壁上，从而防止铜原子通过电介质材料的扩散和器件的劣化。 本发明还消除了铜氧化物溅射到腔室侧壁上，这可最终剥落并引起衬底上的缺陷。 从衬底表面还原金属氧化物的方法包括将衬底放置在等离子体处理室内，使包含氢气的处理气体流入室中，以及通过电感耦合将处理气体的等离子体保持在室内。 该方法优选使用双频蚀刻室进行，其中在处理气体流中进行调节，RF功率和排气泵送速度以消除氧化铜的溅射并使还原反应最大化。

公开(公告)号：US6117246A

公开(公告)日：2000-09-12

申请号：US200196

申请日：1998-11-25

申请人： Vijay Parkhe ,  Gilbert Hausmann

发明人： Vijay Parkhe ,  Gilbert Hausmann

IPC分类号： B23Q3/15 ,  H01L21/683 ,  C23C16/00

CPC分类号： H01L21/6833

摘要： This invention relates to an apparatus comprising a Johnsen-Rahbek electrostatic chuck having a conductive stand-off pad and a method of fabricating the chuck. More specifically, the stand-off pad is made of a conductive polymeric material, such as a polyimide, which is disposed upon a semiconducting or partially conducting layer of the chuck. The polymeric material has a controlled resistivity within a range of about 10.sup.7 -10.sup.12 ohm-cm, which allows a wafer, or other workpiece, to be supported and retained upon the electrostatic chuck via the Johnsen-Rahbek effect.

摘要翻译： 本发明涉及一种包括具有导电支座的约翰森 - 拉贝克静电卡盘和制造卡盘的方法的装置。 更具体地，支座由诸如聚酰亚胺的导电聚合材料制成，其设置在卡盘的半导体或部分导电层上。 聚合物材料具有约107-1012欧姆 - 厘米范围内的受控电阻率，这允许晶片或其它工件通过约翰森 - 拉贝克效应被支撑并保持在静电卡盘上。

公开(公告)号：US06475902B1

公开(公告)日：2002-11-05

申请号：US09522635

申请日：2000-03-10

申请人： Gilbert Hausmann ,  Vijay Parkhe ,  Jagadish Kalyanam

发明人： Gilbert Hausmann ,  Vijay Parkhe ,  Jagadish Kalyanam

IPC分类号： H01L214763

CPC分类号： H01L21/76856 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874

摘要： A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR′)5, the formula (NRR′)3Nb═NR″, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.

摘要翻译： 通过分解有机金属前体而形成的金属氮化物材料的方法，该有机金属前体可用作用于使用导电金属的集成电路的阻挡层。 更具体地，本发明提供了一种在用于铜金属化的基板上沉积氮化铌层的方法。 在本发明的一个方面，将具有式Nb（NRR'）5，式（NRR'）3 Nb = NR“的有机金属前体或其组合在处理气体的存在下引入处理室， 作为氨，并且金属氮化物膜通过在基底上的前体的热或等离子体增强的分解而沉积。 然后将沉积的氮化铌层暴露于等离子体以除去污染物，降低膜的电阻率并使膜致密化。

公开(公告)号：US6057244A

公开(公告)日：2000-05-02

申请号：US126886

申请日：1998-07-31

申请人： Gilbert Hausmann ,  Vijay Parkhe ,  Chia-Ao Lu ,  Michael S. Jackson

发明人： Gilbert Hausmann ,  Vijay Parkhe ,  Chia-Ao Lu ,  Michael S. Jackson

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/68

CPC分类号： H01L21/3065 ,  H01J37/321 ,  H01J37/32137

摘要： Method for processing a semiconductor substrate in a chamber comprising the steps of establishing preprocess conditions in the chamber, executing a two-step plasma ignition, processing the substrate, executing a two-step plasma power down and executing a two-step substrate dechuck. A "softer" ignition of a plasma in two steps reduces DC bias spikes on the substrate. Reducing DC bias spikes reduces processing anomalies such as excess charge retention in the wafer after removing the chucking voltage and wafer repulsion and plasma discontinuity during processing. Additionally, the plasma ramp down after processing allows adequate time for discharging of residual charges in the wafer which allows for more reliable removal of the substrate from the chamber (dechucking).

摘要翻译： 用于处理室内的半导体衬底的方法，包括以下步骤：在腔室中建立预处理条件，执行两步等离子体点火，处理衬底，执行两级等离子体功率下降并执行两步衬底取样。 两步骤中等离子体的“较软”点火降低了基板上的DC偏压尖峰。 减少直流偏置尖峰减少处理异常，例如在处理之后去除夹持电压和晶片排斥和等离子体不连续之后在晶片中过量的电荷保留。 此外，处理之后的等离子体斜坡下降允许足够的时间来排出晶片中的残余电荷，这允许更可靠地从腔室去除衬底（脱帽）。

公开(公告)号：US20150340255A1

公开(公告)日：2015-11-26

申请号：US14282503

申请日：2014-05-20

申请人： Vijay Parkhe ,  Konstantin Makhratchev

发明人： Vijay Parkhe ,  Konstantin Makhratchev

IPC分类号： H01L21/67 ,  F28F3/12 ,  H01L21/683

CPC分类号： H01L21/67109 ,  F28F3/12 ,  H01L21/6831

摘要： An electrostatic chuck is described with independent zone cooling that leads to reduced crosstalk. In one example, the chuck includes a puck to carry a substrate for fabrication processes, and a cooling plate fastened to and thermally coupled to the ceramic puck, the cooling plate having a plurality of different independent cooling channels to carry a heat transfer fluid to transfer heat from the cooling plate.

摘要翻译： 使用独立的区域冷却来描述静电卡盘，导致减少的串扰。 在一个示例中，卡盘包括用于承载用于制造工艺的基底的圆盘，以及紧固到陶瓷盘并且热耦合到陶瓷盘的冷却板，冷却板具有多个不同的独立冷却通道，以承载传热流体以传递 来自冷却板的热量。

公开(公告)号：US20060008660A1

公开(公告)日：2006-01-12

申请号：US10888798

申请日：2004-07-09

申请人： Vijay Parkhe

发明人： Vijay Parkhe

IPC分类号： B32B13/04

CPC分类号： H01L21/67051 ,  B08B1/00 ,  B08B7/0028 ,  Y10T428/24777 ,  Y10T428/252 ,  Y10T428/265 ,  Y10T428/266 ,  Y10T428/269 ,  Y10T428/31507 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31721

摘要： A cleaning wafer cleans process residues from a support surface used in the processing of a substrate in an energized gas. The cleaning wafer has a disc having a liquid precursor derived polyimide layer formed directly on the disc by applying a liquid polyimide precursor to the disc. The polyimide layer has a thickness of less than about 50 microns, and a cleaning surface shaped to match a contour of the support surface. Process residues adhere to the cleaning surface and are cleaned from the support surface upon removal of the cleaning wafer therefrom.

摘要翻译： 清洁晶片从用于在通电气体中的衬底的加工中使用的支撑表面清洗工艺残留物。 清洁晶片具有通过将液体聚酰亚胺前体施加到盘上而具有直接形成在盘上的液体前体衍生的聚酰亚胺层的盘。 聚酰亚胺层具有小于约50微米的厚度，以及成形为匹配支撑表面轮廓的清洁表面。 工艺残留物粘附到清洁表面上，并从其上清除清洁晶片，并从支撑表面清洗。

公开(公告)号：US6125789A

公开(公告)日：2000-10-03

申请号：US16241

申请日：1998-01-30

申请人： Anand Gupta ,  Vijay Parkhe

发明人： Anand Gupta ,  Vijay Parkhe

IPC分类号： G01N15/06 ,  C23C16/52 ,  G01N15/02 ,  H01L21/205 ,  H01L21/66 ,  H05H1/00 ,  C23C16/00

CPC分类号： G01N15/0205

摘要： A method and apparatus for increasing the sensitivity of an in situ particle monitor. A light scattering technique, preferably using laser light, is employed to monitor particle concentrations within the processing chamber of a plasma-based substrate processing system. Particle concentrations are increased in the light field of the sensor by creating an electric or magnetic field in the processing chamber to concentrate the particles suspended therein.

摘要翻译： 一种提高原位粒子监测仪灵敏度的方法和装置。 采用优选使用激光的光散射技术来监测等离子体基底处理系统的处理室内的颗粒浓度。 通过在处理室中产生电场或磁场来浓缩悬浮在其中的颗粒，在传感器的光场中颗粒浓度增加。

公开(公告)号：US20050252454A1

公开(公告)日：2005-11-17

申请号：US11065702

申请日：2005-02-23

申请人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

发明人： Vijay Parkhe ,  Matthew Leopold ,  Timothy Ronan ,  Todd Martin ,  Edward Ng ,  Nitin Khurana ,  Song-Moon Suh ,  Richard Fay ,  Christopher Hagerty ,  Michael Rice ,  Darryl Angelo ,  Kurt Ahman ,  Matthew Tsai ,  Steve Sansoni

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/463 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

摘要： A lifting assembly can lift a substrate from a substrate support and transport the substrate. The lift assembly has a hoop sized to fit about a periphery of the substrate support, and a pair of arcuate fins mounted on the hoop, each arcuate fin comprising a pair of opposing ends having ledges that extend radially inward, each ledge having a raised protrusion to lift a substrate so that the substrate contacts substantially only the raised protrusion, thereby minimizing contact with the ledge, when the pair of fins is used to lift the substrate off the substrate support. The lifting assembly and other process chamber components can have a diamond-like coating having interlinked networks of (i) carbon and hydrogen, and (ii) silicon and oxygen. The diamond-like coating has a contact surface having a coefficient of friction of less than about 0.3, a hardness of at least about 8 GPa, and a metal concentration level of less than about 5×1012 atoms/cm2 of metal. The contact surface reduces contamination of a substrate when directly or indirectly contacting a substrate.

摘要翻译： 提升组件可以从衬底支撑件提起衬底并输送衬底。 提升组件具有适合围绕基板支撑件的周边的环形尺寸，以及安装在环上的一对弓形翅片，每个弓形翅片包括一对相对的端部，其具有径向向内延伸的凸缘，每个凸缘具有凸起突起 以提升衬底，使得衬底基本上仅接触凸起突起，从而当使用一对翅片将衬底从衬底支撑件提起时，使与凸缘的接触最小化。 提升组件和其它处理室组件可以具有类似金刚石的涂层，其具有（i）碳和氢的互连网络，和（ii）硅和氧。 类金刚石涂层具有摩擦系数小于约0.3，硬度至少约8GPa，金属浓度小于约5×10 12原子/ cm的接触表面 金属的<2> 2。 当直接或间接接触基底时，接触表面减少了基底的污染。

公开(公告)号：US20050183669A1

公开(公告)日：2005-08-25

申请号：US10786876

申请日：2004-02-24

申请人： Vijay Parkhe ,  Kurt Ahmann ,  Matthew Tsai ,  Steve Sansoni

发明人： Vijay Parkhe ,  Kurt Ahmann ,  Matthew Tsai ,  Steve Sansoni

IPC分类号： H01L21/683 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/463 ,  H01L21/6831 ,  H01L21/6875 ,  H01L21/68757 ,  Y10T279/23

摘要： A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.

摘要翻译： 衬底支撑件具有支撑结构，并且在具有碳 - 氢网络的支撑结构上具有涂层。 涂层具有摩擦系数小于约0.3，硬度至少约8GPa的接触表面。 涂层的接触表面能够减少与接触表面接触的基底的磨损和污染。 在一个版本中，支撑结构具有覆盖电极的电介质。 电介质上的多个台面具有其上具有接触表面的涂层。

公开(公告)号：US5748435A

公开(公告)日：1998-05-05

申请号：US774664

申请日：1996-12-30

申请人： Vijay Parkhe

发明人： Vijay Parkhe

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/70875 ,  G03F7/707 ,  G03F7/70708 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00

摘要： Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system. The apparatus consists of a gas inlet port extending through the wafer support for supplying gas to the wafer support surface and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface, where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.

摘要翻译： 一种用于在半导体晶片处理系统中在晶片和晶片支撑件的晶片支撑表面之间提供自调节气流的装置。 该装置由延伸穿过晶片支架的气体入口端口，用于向晶片支撑表面供应气体;以及多个排气口，从支撑表面延伸穿过晶片支撑件，用于从支撑表面排出气体，其中多个 的排气口在晶片和晶片支撑表面之间保持均匀的背侧气体压力。