公开(公告)号：US20030213893A1

公开(公告)日：2003-11-20

申请号：US10437889

申请日：2003-05-15

Applicant: EBARA CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Ichirota Nagahama ,  Yuichiro Yamazaki ,  Kenji Watanabe ,  Masahiro Hatakeyama ,  Tohru Satake ,  Nobuharu Noji

IPC: H01J037/285

CPC classification number: H01J37/28 ,  H01J2237/0044 ,  H01J2237/2817

Abstract: A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

Abstract translation: 提供了一种缺陷检查装置，用于产生较小失真的测试图像，以可靠地观察用于检测缺陷的样品表面。 缺陷检测装置包括用于照射样品的一次电子束源，用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜，用于检测二次电子的检测器，以及用于处理的图像处理单元 来自检测器的信号。 此外，可以提供第二电子源用于发射照射到样品的电子束，其中在用来自第一电子源的一次电子束照射之前，可以用来自第二电子源的电子束照射样品，用于观察 例子。 还提供了一种装置制造方法，用于使用缺陷检测装置以高吞吐量检查处理装置。

公开(公告)号：US20020014589A1

公开(公告)日：2002-02-07

申请号：US09919870

申请日：2001-08-02

Applicant: SHIMADZU CORPORATION

Inventor： Hiroshi Daimon

IPC: H01J037/285 ,  G01N023/227

CPC classification number: G01N23/227

Abstract: Forward scattering peaks of photoelectrons having different angular momenta is generated by radiating to a sample two rays of circularly polarized light that differ in a rotary direction. Two images of photoelectron diffraction patterns are formed by two-dimensionally detecting the photoelectron diffraction patterns formed with the photoelectron forward scattering peaks. The observer can three-dimensionally observe the structure in an atomic arrangement by observing these photoelectron diffraction pattern images with his or hers right and left eyes, respectively.

Abstract translation: 具有不同角动量的光电子的正向散射峰通过向旋转方向不同的两个圆偏振光线照射而产生。 通过二维检测由光电子前向散射峰形成的光电子衍射图来形成光电子衍射图案的两个图像。 观察者可以分别用他或她的右眼和左眼观察这些光电子衍射图像图像，以原子排列三维地观察结构。

公开(公告)号：US20030111601A1

公开(公告)日：2003-06-19

申请号：US10017262

申请日：2001-12-14

Applicant: KLA-Tencor Corporation

Inventor： David L. Adler ,  Matthew Marcus

IPC: G01N023/227 ,  H01J037/285

CPC classification number: G01N23/227 ,  H01J37/285 ,  H01J2237/2817

Abstract: A method of inspecting and imaging substrates with an electron beam. The method can include a illuminating the substrate with a photon beam to cause photoemission of electrons. A low energy electron beam can be used to prevent or reduce positive charging of the substrate. Reflected electrons and/or emitted photoelectrons can be imaged to review or inspect the substrate.

Abstract translation: 用电子束检查和成像基板的方法。 该方法可以包括用光子束照射衬底以引起电子的光电子发射。 可以使用低能电子束来防止或减少衬底的正电荷。 可以对反射的电子和/或发射的光电子进行成像以检查或检查衬底。

公开(公告)号：US20030205669A1

公开(公告)日：2003-11-06

申请号：US10406339

申请日：2003-04-02

Inventor： David L. Adler ,  David J. Walker ,  Fred Babian ,  Travis Wolfe

IPC: H01J037/285 ,  G01N023/225

CPC classification number: H01J37/285

Abstract: An apparatus and method for inspecting a surface of a sample, particularly but not limited to a semiconductor device, using an electron beam is presented. The technique is called Secondary Electron Emission Microscopy (SEEM), and has significant advantages over both Scanning Electron Microscopy (SEM) and Low Energy Electron Microscopy (LEEM) techniques. In particular, the SEEM technique utilizes a beam of relatively high-energy primary electrons having a beam width appropriate for parallel, multi-pixel imaging. The electron energy is near a charge-stable condition to achieve faster imaging than was previously attainable with SEM, and charge neutrality unattainable with LEEM. The emitted electrons may be detected using a time delay integration detector.

公开(公告)号：US20030010915A1

公开(公告)日：2003-01-16

申请号：US10204643

申请日：2002-08-20

Inventor： Krzysztof Grzelakowski

IPC: H01J037/285

CPC classification number: H01J37/285

Abstract: The invention relates to an emission electron microscope, comprising an objective lens, an imaging system with at least one lens and a stigmator. The invention is characterized in that said microscope comprises a second, independent imaging system (K2), parallel to the first imaging system (K1) and two electron detector devices (25) and (27), by means of which two independent images are recorded: a real image and an image of the angle distribution of the electrons as a result of electronically switching the potentials of the deflector elements (13) and (17). Both identical deflector elements comprise pairs of spherical and concentric electrodes and are electron-optically separated from each other (13a), (13b) and (17a), (17b) by double the focal length thereof and turn the electron beam through an angle corresponding to (null) and (nullnull), which leads to a parallel shift of the electron beam. The electrode (13b) contains a passage (13c), which allows the electron drift along the electron-optical main axis (29a), whilst the deflection is switched off. Said emission electron microscope also comprises an electron source (8), arranged close to the electron-optical axis (29) of the objective lens, which emits primary electrons along the electron-optical axis (28) at an angle (null) to the electron-optical axis (29) of the objective lens, a contrast diaphragm system (4a) in a plane correlated to the focal plane of the objective and an image diaphragm system (11), in one of the image planes of the system.

Abstract translation: 本发明涉及一种发射电子显微镜，其包括物镜，具有至少一个透镜的成像系统和支柱。 本发明的特征在于，所述显微镜包括与第一成像系统（K1）平行的第二独立成像系统（K2）和两个电子检测器装置（25）和（27），借助于此，两个独立的图像被记录 ：作为电子切换偏转元件（13）和（17）的电位的结果，电子的角度分布的实际图像和图像。 两个相同的偏转器元件包括一对球形和同心电极，并且彼此以电子 - 光学方式彼此分离（13a），（13b）和（17a），（17b），并使电子束通过相应角度 到（β）和（ - β），这导致电子束的平行位移。 电极（13b）包含通道（13c），其允许沿着电子 - 光学主轴（29a）的电子漂移，同时偏转被切断。 所述发射电子显微镜还包括靠近物镜的电子 - 光轴（29）布置的电子源（8），其沿着电子 - 光轴（28）以与 物镜的电子光轴（29），与物镜的焦平面相关的平面中的对比度光阑系统（4a）和系统的一个像平面内的图像光阑系统（11）。

公开(公告)号：US20020020814A1

公开(公告)日：2002-02-21

申请号：US09847583

申请日：2001-05-03

Inventor： Hagai Cohen ,  Israel Rubinstein

IPC: G01N023/227 ,  H01J037/285

CPC classification number: G01N23/227 ,  B82Y15/00 ,  H01J2237/2522

Abstract: A method of examining a sample, including: performing a first spectroscopic analysis of a surface portion of the sample when the sample surface portion is in a first electrical charge state; placing the sample surface portion in a second electrical charge state that is different from the first electrical charge state and performing a second spectroscopic analysis of the surface portion of the sample when the sample surface portion is in the second electrical charge state; and comparing the first spectroscopic analysis result with the second spectroscopic analysis result to obtain at least one of structural and electrical information about the sample.

Abstract translation: 一种检查样品的方法，包括：当样品表面部分处于第一电荷状态时，对样品的表面部分进行第一光谱分析; 将样品表面部分置于不同于第一电荷状态的第二电荷状态，并且当样品表面部分处于第二电荷状态时，对样品的表面部分进行第二光谱分析; 以及将所述第一光谱分析结果与所述第二光谱分析结果进行比较，以获得关于所述样品的结构和电信息中的至少一个。