Channel multiplier plate CRT scan converter and scan conversion method
    1.
    发明授权
    Channel multiplier plate CRT scan converter and scan conversion method 失效
    通道乘法器CRT扫描转换器和扫描转换方法

    公开(公告)号:US4147988A

    公开(公告)日:1979-04-03

    申请号:US802616

    申请日:1977-06-02

    申请人: Dennis R. Hall

    发明人: Dennis R. Hall

    摘要: An electron beam scan conversion method and apparatus based on the gain recovery or "dead" time characteristic of channel electron multipliers. The waveform of an electrical signal is written on the input face of a channel multiplier plate with an electron beam. Then, within the dead time of the written channels (typically about 1-100 msec.), the plate's input face is scanned in a predetermined raster pattern with a constant current beam. During the scanning step, an output signal is derived that corresponds to the difference in emission in response to the scanning beam between the channels in the written area of the plate and those outside that area.

    摘要翻译: 基于通道电子倍增器的增益恢复或“死”时间特性的电子束扫描转换方法和装置。 电信号的波形被写入具有电​​子束的通道倍增器板的输入面上。 然后,在写入通道的死区时间(通常约1-100毫秒)内,以恒定电流波束以预定的光栅图案扫描板的输入面。 在扫描步骤期间,导出响应于板的写入区域中的通道与该区域之外的扫描光束对应于发射差异的输出信号。

    Charge storage tube and method for operating the same
    2.
    发明授权
    Charge storage tube and method for operating the same 失效
    充电储存管及其操作方法

    公开(公告)号:US3982191A

    公开(公告)日:1976-09-21

    申请号:US547964

    申请日:1975-02-07

    摘要: A charge storage tube includes a target comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate and a metal electrode formed on the insulating layer, wherein a target potential of the target can be changed so that it becomes not only below a first cross-over potential but also over the first cross-over potential. In the charge storage tube, a signal is written in the target by a signal writing means to generate pairs of electron-hole in the target, a surface potential of the insulating layer with the written signal is changed so as to become over the first cross-over potential, and the written signal is read out by scanning electron beams on the target.

    摘要翻译: 电荷存储管包括靶,其包括半导体衬底,形成在半导体衬底上的绝缘层和形成在绝缘层上的金属电极,其中靶的目标电位可以改变,使得不仅在第一十字 但仍然超过了第一次交叉潜力。 在电荷存储管中,通过信号写入装置将信号写入目标物,以在目标物中产生成对的电子空穴,改变具有写入信号的绝缘层的表面电位,使其变为超过第一十字 通过扫描目标上的电子束来读出写入的信号。

    Cathode ray tube monoscope with semiconductor target
    3.
    发明授权
    Cathode ray tube monoscope with semiconductor target 失效
    阴极射线管单体半导体靶

    公开(公告)号:US3885189A

    公开(公告)日:1975-05-20

    申请号:US42244973

    申请日:1973-12-06

    申请人: RAYTHEON CO

    IPC分类号: H01J29/44 H01J31/58 H01J31/08

    CPC分类号: H01J29/44 H01J31/585

    摘要: A display system having a cathode ray tube signal generator in which a solid state junction target utilizes a layer of semiconductor material and a layer of dielectric material to form a junction. The signal generator may be of the monoscope type in which portions of the target are masked or it may be of the photosensitive type in which an image is projected onto the target. A signal derived from the signal generator is displayed on a second cathode ray tube.

    摘要翻译: 具有阴极射线管信号发生器的显示系统,其中固态接合靶使用半导体材料层和电介质材料层以形成结。 信号发生器可以是单目镜型,其中目标的部分被掩蔽,或者它可以是将图像投影到目标上的感光类型。 从第二阴极射线管显示从信号发生器得到的信号。

    Multiple electron mirror apparatus
    4.
    发明授权
    Multiple electron mirror apparatus 失效
    多电子反射镜设备

    公开(公告)号:US3864596A

    公开(公告)日:1975-02-04

    申请号:US27277872

    申请日:1972-07-18

    发明人: MAFFITT KENT N

    CPC分类号: H01J31/58 G11C11/23 H01J29/60

    摘要: An electron beam system using an electron beam source, a magnetic prism and a plurality of electron mirrors with associated electron beam focusing or cross-section control lenses and beam deflection units permits an electron beam from the electron beam source to be modified or acted upon as required by the electron mirrors as the electron beam is sequentially presented to the electron mirrors. An electron beam is directed to the first electron mirror where it is reflected and directed to the next electron mirror, etc. The electron beam is acted upon at an electron mirror in accordance with the voltage bias applied to the electron mirror. The voltage bias may be set to passively mirror the entire beam or a portion thereof, modulate the beam in accordance with the surface condition of the mirror or permit the beam to impinge on the mirror surface. The electron beam focusing or cross-section control lenses and deflection units provide for selective direction of the beam and control of the cross-section to determine the portion and size of such portion of an electron mirror surface which will influence or be influenced by the electron beam.

    摘要翻译: 使用电子束源,磁性棱镜和具有相关联的电子束聚焦或横截面控制透镜和光束偏转单元的多个电子反射镜的电子束系统允许来自电子束源的电子束被修改或作用为 当电子束被顺序地呈现给电子反射镜时,电子反射镜需要这种光束。 电子束被引导到第一电子反射镜,在其中它被反射并被引导到下一个电子反射镜等。根据施加到电子反射镜的电压偏置,电子束被作用在电子反射镜上。 电压偏压可以被设置为被动地镜像整个光束或其一部分,根据反射镜的表面状态来调制光束,或允许光束撞击在镜面上。 电子束聚焦或横截面控制透镜和偏转单元提供光束的选择性方向并且控制横截面以确定将影响或受电子影响的电子反射镜表面的这部分的部分和尺寸 光束。

    Protection circuit
    5.
    发明授权
    Protection circuit 失效
    保护电路

    公开(公告)号:US3784870A

    公开(公告)日:1974-01-08

    申请号:US3784870D

    申请日:1972-08-07

    申请人: RCA CORP

    发明人: DORSEY D

    CPC分类号: H04N3/20

    摘要: The circuit of the invention operates in conjunction with an imaging transducer to sense the loss of applied horizontal or vertical deflection signals, and to respond to such loss by changing the bias voltage on the transducer in a direction to turn ''''off'''' its electron beam.

    摘要翻译: 本发明的电路结合成像传感器操作以感测施加的水平或垂直偏转信号的损失,并且通过改变换能器上的偏置电压以使其电子束“断开”的方向来应对这种损耗。

    Cathode-ray storage tube having semicontinuous phosphor layer on continuous electron bombardment induced conductivity layer
    8.
    发明授权
    Cathode-ray storage tube having semicontinuous phosphor layer on continuous electron bombardment induced conductivity layer 失效
    连续电子波导诱导电导层上具有半光子层的阴极储存管

    公开(公告)号:US3567984A

    公开(公告)日:1971-03-02

    申请号:US3567984D

    申请日:1968-04-22

    申请人: M O VALVE CO LTD

    CPC分类号: H01J31/122 H01J29/44

    摘要: A cathode-ray storage tube wherein the storage screen comprises an electrically conducting control layer overlaid with a layer of insulating material, having electron bombardment induced conductivity properties, which in turn is overlaid by a semicontinuous layer of charge-storage material. A writing gun bombards the insulating layer with electrons to produce localized paths of low conductivity between the charge-storage layer and the control layer, which is at a potential above the first crossover value of the secondary electron characteristic of the charge-storage material. Thereafter, electrons from a gun flooding the screen maintain a charge-storage pattern on the charge-storage layer by secondary electron emission at regions of the charge-storage layer corresponding to the localized conductive paths.

    Direct-view storage tube having controlled write-through
    9.
    发明授权
    Direct-view storage tube having controlled write-through 失效
    具有控制写入的直接存储管

    公开(公告)号:US3566174A

    公开(公告)日:1971-02-23

    申请号:US3566174D

    申请日:1969-07-22

    发明人: BURNS JOSEPH

    CPC分类号: H01J31/18

    摘要: A flood gun control grid is placed between an electron gun and a backing electrode, and covers a given portion of the area of the backing electrode. This control grid is connected to control potentials sufficient to cutoff flood gun electrons. Write-gun electrons, having sufficiently high velocity, will not be cutoff by the flood control grid and will penetrate the grid and backing electrode to write directly on the portion of the viewing screen of the tube which is blocked by the flood-control grid.