公开(公告)号：US07259388B2

公开(公告)日：2007-08-21

申请号：US11120675

申请日：2005-05-03

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L31/039

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

公开(公告)号：US07084460B2

公开(公告)日：2006-08-01

申请号：US10700085

申请日：2003-11-03

申请人： Tze-chiang Chen ,  Guy M. Cohen ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

发明人： Tze-chiang Chen ,  Guy M. Cohen ,  Alexander Reznicek ,  Devendra K. Sadana ,  Ghavam G. Shahidi

IPC分类号： H01L29/12 ,  H01L31/036 ,  H01L71/01 ,  H01L71/12 ,  H01L31/039

CPC分类号： H01L21/76254 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1812 ,  Y02E10/547

摘要： A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.

公开(公告)号：US06995430B2

公开(公告)日：2006-02-07

申请号：US10456103

申请日：2003-06-06

申请人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

发明人： Thomas A. Langdo ,  Matthew T. Currie ,  Richard Hammond ,  Anthony J. Lochtefeld ,  Eugene A. Fitzgerald

IPC分类号： H01L31/039

CPC分类号： H01L29/7847 ,  H01L21/28518 ,  H01L21/76254 ,  H01L21/76256 ,  H01L21/76259 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66242 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66787 ,  H01L29/66916 ,  H01L29/7842 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78684 ,  H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.