专利检索 ap:("Thomas A. Langdo" OR "Matthew T. Currie" OR "Richard Hammond" OR "Anthony J. Lochtefeld" OR "Eugene A. Fitzgerald") AND inv:"Matthew T. Currie" 第 1 页

1.

发明授权
Methods for forming III-V semiconductor device structures 有权
标题翻译：形成III-V半导体器件结构的方法

公开(公告)号：US07838392B2

公开(公告)日：2010-11-23

申请号：US11943188

申请日：2007-11-20

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/30

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

2.

发明授权
Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain 有权
标题翻译：通过机械诱导应变形成绝缘体上半导体器件结构的方法

公开(公告)号：US07588994B2

公开(公告)日：2009-09-15

申请号：US11128628

申请日：2005-05-13

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/46

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

3.

发明授权
Strained-semiconductor-on-insulator device structures 有权

公开(公告)号：US06995430B2

公开(公告)日：2006-02-07

申请号：US10456103

申请日：2003-06-06

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L31/039

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

4.

发明授权
Methods for forming semiconductor device structures 有权

公开(公告)号：US08586452B2

公开(公告)日：2013-11-19

申请号：US13227077

申请日：2011-09-07

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L21/36

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

5.

发明申请
METHODS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：形成半导体器件结构的方法

公开(公告)号：US20110318893A1

公开(公告)日：2011-12-29

申请号：US13227077

申请日：2011-09-07

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L21/336 , H01L21/265 , H01L21/20

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

6.

发明申请
III-V Semiconductor Device Structures 有权
标题翻译： III-V半导体器件结构

公开(公告)号：US20110073908A1

公开(公告)日：2011-03-31

申请号：US12907787

申请日：2010-10-19

申请人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

发明人： Anthony J. Lochtefeld , Thomas A. Langdo , Richard Hammond , Matthew T. Currie , Eugene A. Fitzgerald

IPC分类号： H01L29/20

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

7.

发明授权
Methods of forming strained-semiconductor-on-insulator device structures 有权
标题翻译：形成应变绝缘体上半导体器件结构的方法

公开(公告)号：US08748292B2

公开(公告)日：2014-06-10

申请号：US11073780

申请日：2005-03-07

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/30 , H01L29/06 , H01L21/762 , H01L29/786 , H01L29/66 , H01L27/12 , H01L29/78 , H01L21/84 , H01L21/02

CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

8.

发明授权
III-V semiconductor device structures 有权
标题翻译： III-V半导体器件结构

公开(公告)号：US08026534B2

公开(公告)日：2011-09-27

申请号：US12907787

申请日：2010-10-19

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L31/102

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

9.

发明申请
METHODS FOR FORMING III-V SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：用于形成III-V半导体器件结构的方法

公开(公告)号：US20080128751A1

公开(公告)日：2008-06-05

申请号：US11943188

申请日：2007-11-20

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L29/20 , H01L21/30

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

10.

发明授权
Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes 有权
标题翻译：通过使用分裂面形成绝缘体上半导体器件结构的方法

公开(公告)号：US07297612B2

公开(公告)日：2007-11-20

申请号：US11127508

申请日：2005-05-12

申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald

IPC分类号： H01L21/30

CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687

摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体硅法相结合。

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