Band gap reference voltage generating circuit

    公开(公告)号:US11188113B2

    公开(公告)日:2021-11-30

    申请号:US16820015

    申请日:2020-03-16

    IPC分类号: G05F3/30 G05F3/22

    摘要: A band gap reference voltage generating circuit includes a reference voltage generating circuit, a current generating circuit, a current divider circuit, and a first connection path switching circuit. The reference voltage generating circuit forms a reference voltage on first and second current input terminals thereof. First and second input terminals of the current generating circuit are connected to the first and second current input terminals, respectively. The current generating circuit generates a first current to bias the reference voltage generating circuit. The current divider circuit includes a current input terminal, a first current output terminal, and a second current output terminal. The first connection path switching circuit switches connection paths between the first input terminal and the second input terminal of the current generating circuit, and the first current input terminal and the second current input terminal of the current divider circuit.

    Bandgap reference circuit and electronic device

    公开(公告)号:US11086347B1

    公开(公告)日:2021-08-10

    申请号:US17035720

    申请日:2020-09-29

    发明人: Xiaoqiang Shou

    摘要: The present disclosure provides a bandgap reference circuit which includes a basic reference module to generate a basic reference voltage containing a first linear temperature-coefficient (TC) voltage and a first nonlinear TC voltage when a terminal node in the basic reference module is grounded. The bandgap reference circuit further includes a compensation module with an output node coupled to the terminal node of the basic reference module. The compensation module generates a compensation voltage at the output node with a second linear TC term and a second nonlinear TC term by using a first set of current sources proportional to absolute temperate (PTAT) and a second set of current sources with TC of zero. And the bandgap reference circuit combines the basic reference voltage and the compensation voltage, cancelling all the linear and nonlinear terms, and thus create a composite reference voltage independent of temperature.

    Reference voltage generation circuit

    公开(公告)号:US11048285B2

    公开(公告)日:2021-06-29

    申请号:US16903365

    申请日:2020-06-16

    发明人: Hwey-Ching Chien

    IPC分类号: G05F3/22 G05F1/46 G05F3/30

    摘要: A reference voltage generation circuit includes a supply voltage terminal, a node, a current source, an output terminal, a common voltage terminal, a bandgap reference circuit and a feedback circuit. The supply voltage terminal is used to provide a supply voltage. The current source is coupled between the supply voltage terminal and the node, and used to receive the supply voltage and generate a current according to a feedback signal, and output the current to establish at the node a first voltage substantially insensitive to the supply voltage. The common voltage terminal is used to provide a common voltage. The bandgap reference circuit is coupled between the node and the common voltage terminal, and used to establish a temperature-invariant bandgap voltage at the output terminal. The feedback circuit is coupled to the node and the current source, and used to generate the feedback signal according to the first voltage.

    PMOS-output LDO with full spectrum PSR

    公开(公告)号:US11003202B2

    公开(公告)日:2021-05-11

    申请号:US16808806

    申请日:2020-03-04

    发明人: Soheil Golara

    摘要: A PMOS-output LDO with full spectrum PSR is disclosed. In one implementation, a LDO includes a pass transistor (MO) having a source coupled to an input voltage (Vin); a noise cancelling transistor (MD) having a source coupled to the Vin, a gate coupled to a drain and a gate of the pass transistor; a source follower transistor (MSF) having a source coupled to a drain of the pass transistor, a drain coupled to the drain and gate of the noise cancelling transistor; a current sink coupled between the drain of the source follower transistor and ground; and an error amplifier having an output to drive the gate of the source follower transistor.

    Delay circuit
    6.
    发明授权

    公开(公告)号:US10862468B1

    公开(公告)日:2020-12-08

    申请号:US16808579

    申请日:2020-03-04

    发明人: Chien-Wen Chen

    IPC分类号: H03K5/134 G05F3/24 G05F3/22

    摘要: A delay circuit includes an inverting receiving circuit, a reference point generating circuit, a first buffer gate and a first inverter. An inverting receiving circuit includes a first transistor and a first switching circuit. The reference point generating circuit includes a compensation resistor, a capacitor element, and a first current source. In response to the input signal being at a first potential, a voltage of the output node starts to decrease from a voltage reference point. In response to at least one of a manufacturing process, the first reference voltage, and a temperature being changed, the compensation resistor is configured to correct the voltage reference point.

    BANDGAP REFERENCE CIRCUITRY
    9.
    发明申请

    公开(公告)号:US20190129461A1

    公开(公告)日:2019-05-02

    申请号:US16173814

    申请日:2018-10-29

    发明人: Yasuhiko SONE

    IPC分类号: G05F3/26 G05F3/22 G05F3/24

    CPC分类号: G05F3/267 G05F3/225 G05F3/245

    摘要: Bandgap reference circuitry comprises a first current mirror connected to a power supply line and configured to supply a first current to a first node and a second current to a second node virtually-shorted to the first node, a first pn junction element between the first node and a ground line; a first variable resistor element between the second node and the ground line, and a second pn junction element connected in series to the first variable resistor element. The first variable resistor element has a resistance dependent on a power supply voltage supplied to the power supply line.

    LOW NOISE BANDGAP REFERENCE APPARATUS
    10.
    发明申请

    公开(公告)号:US20190101948A1

    公开(公告)日:2019-04-04

    申请号:US15721521

    申请日:2017-09-29

    申请人: Intel Corporation

    发明人: Matthias EBERLEIN

    IPC分类号: G05F3/30 G05F3/26 G05F3/22

    摘要: An apparatus comprising: a first supply node; a second supply node; a first transistor coupled to the first supply node, the first transistor is to provide a first current which is complementary to absolute temperature (CTAT); a second transistor coupled to the first supply node, the second transistor is to provide a second current which is proportional to absolute temperature (PTAT); a resistive device coupled in series at a node with the first and second transistors, and coupled to the second supply node, wherein the node is to sum the CTAT and the PTAT currents.