公开(公告)号：US20210091777A1

公开(公告)日：2021-03-25

申请号：US17041949

申请日：2018-12-19

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： EIICHI NAKAMOTO

IPC: H03M1/12 ,  H03F3/343

Abstract: Signal quality is improved in a circuit for amplifying and sampling an analog signal. An input signal is input to one end of an input-side resistor. An operational amplifier amplifies the input signal, and outputs the input signal from an output terminal as an amplified signal. One end of a filter capacitor is connected to an input terminal of the operational amplifier. A predetermined frequency component of the input signal passes through the filter capacitor. A sampling capacitor imports the amplified signal during a predetermined sampling period, and holds the amplified signal during a predetermined hold period. A sampling switch connects the output terminal of the operational amplifier to one end of the sampling capacitor during the sampling period, and disconnects the output terminal of the operational amplifier from one end of the sampling capacitor during the hold period. A cutoff circuit disconnects the input-side resistor from one end of the filter capacitor during the sampling period, and connects the input-side resistor to one end of the filter capacitor during the hold period.

公开(公告)号：US10897230B2

公开(公告)日：2021-01-19

申请号：US16348618

申请日：2017-11-06

Applicant: Tohoku University

Inventor： Satoru Tanoi ,  Tetsuo Endoh

IPC: H03F1/02 ,  H03F3/45 ,  H03F3/343 ,  H03G3/30 ,  H02M3/07 ,  G05F1/46

Abstract: An amplification apparatus includes a bias circuit for supplying a bias voltage, and an amplification circuit to which the bias voltage is supplied from the bias circuit. The bias circuit includes a first current source for increasing/decreasing a first current depending on the bias voltage, and a first MOSFET with first polarity through which the first current flows, to output a first voltage from a connection between the first current source and the first MOSFET; a second current source for outputting a constant current as a second current, and a second MOSFET with second polarity through which the second current flows, to output a second voltage from a connection between the second current source and the second MOSFET; and a voltage comparator for increasing/decreasing the bias voltage such that the first and second voltages become equal, based on a difference between the first and second voltages.

公开(公告)号：US10284154B1

公开(公告)日：2019-05-07

申请号：US15836191

申请日：2017-12-08

Applicant: Agilent Technologies, Inc.

Inventor： Michael Schoessow

IPC: H03F3/191 ,  H03F1/30 ,  H03F3/343

Abstract: A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

公开(公告)号：US10263567B2

公开(公告)日：2019-04-16

申请号：US15887285

申请日：2018-02-02

Applicant: FUJITSU COMPONENT LIMITED

Inventor： Hideki Oku

IPC: H03F1/08 ,  H03F3/19 ,  H03F1/02 ,  H03F3/08 ,  H03F3/343 ,  H03F3/45 ,  H03F3/50

Abstract: An amplifier circuit includes a first transistor; a first resistor to which a first potential is applied, the first resistor being connected to an emitter of the first transistor; a second resistor to which a second potential is applied, the second resistor being connected to a collector of the first transistor; and a signal control circuit configured to apply, to a base of the first transistor, a voltage that has been level-shifted based on an average value of a voltage at the collector of the first transistor, the signal control circuit being provided between the collector and the base of the first transistor.

公开(公告)号：US10230338B2

公开(公告)日：2019-03-12

申请号：US15682924

申请日：2017-08-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Reiji Nakajima

IPC: H03F1/14 ,  H03F3/19 ,  H01L29/737 ,  H03F1/30 ,  H03F3/343 ,  H01L23/48 ,  H03F3/195 ,  H03F3/21

Abstract: A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.

公开(公告)号：US20050280469A1

公开(公告)日：2005-12-22

申请号：US10873902

申请日：2004-06-22

Applicant: Scott Willis

Inventor： Scott Willis

IPC: H03F3/26 ,  H03F3/30 ,  H03F3/343 ,  H03F3/45

CPC classification number: H03F3/26 ,  H03F3/3083 ,  H03F3/3432 ,  H03F3/45475 ,  H03F2200/447 ,  H03F2203/45288

Abstract: A transconductance amplifier generally limits its current output, and specifically decreases its current output as a function of temperature. The circuit is made up of an operational amplifier and two drive transistors that are connected to a first part of the amplifier circuit and a second part of the amplifier circuit respectively. The first part of the circuit is driven by positive input voltages, and the second part of the circuit is driven by negative input voltages. A transistor in each part of the circuit clamps a voltage, thereby limiting the current output. The negative temperature coefficient of the transistor also decreases the output current as the temperature of the circuit rises.

Abstract translation: 跨导放大器通常限制其电流输出，并且具体地降低其作为温度的函数的电流输出。 电路由运算放大器和两个驱动晶体管组成，分别连接到放大器电路的第一部分和放大器电路的第二部分。 电路的第一部分由正输入电压驱动，电路的第二部分由负输入电压驱动。 电路的每个部分中的晶体管钳位电压，从而限制电流输出。 当电路的温度上升时，晶体管的负温度系数也降低了输出电流。

公开(公告)号：US06978008B2

公开(公告)日：2005-12-20

申请号：US10271779

申请日：2002-10-17

Applicant: Tokuo Nakamura

Inventor： Tokuo Nakamura

IPC: G01R19/14 ,  H03F3/343 ,  H03F3/347 ,  H03K17/725 ,  H04M1/82 ,  H04M3/00 ,  H04M3/22

CPC classification number: H04M1/82 ,  G01R19/175

Abstract: A PNPN structure thyristor and a third P-type impurity region are formed on a semiconductor substrate, and a fixed current circuit using an NPN transistor 20 and a resistor 30 is connected to a cathode terminal K and a gate terminal G of a composite element 10 that has a P-channel MOS transistor Q3 with the third P-type impurity region as a drain connected to a PNP transistor Q1 of the thyristor. If a voltage applied to the anode terminal A of the composite element 10 rises from 0V, initially the thyristor is on and current flows, but once the threshold voltage of transistor Q3 is reached transistor Q3 turns on. A short circuit then exists between the base and emitter of transistor Q3 of the thyristor and current of the composite element 10 itself is cut off. Because of the bipolar structure it is simple to configure a small integrated circuit with a high withstand voltage. In this way, a zero crossing detection circuit is provided that has high withstand voltage characteristics, but which can be made as a small sized integrated circuit.

Abstract translation: 在半导体衬底上形成PNPN结构晶闸管和第三P型杂质区，并且使用NPN晶体管20和电阻30的固定电流电路连接到复合元件10的阴极端子K和栅极端子G 其具有作为与晶闸管的PNP晶体管Q1连接的漏极的第三P型杂质区的P沟道MOS晶体管Q 3。 如果施加到复合元件10的阳极端子A的电压从0V上升，则最初晶闸管导通，电流流过，但是一旦达到晶体管Q 3的阈值电压，晶体管Q 3就导通。 然后在晶闸管的晶体管Q 3的基极和发射极之间存在短路，并且复合元件10本身的电流被切断。 由于双极结构，配置具有高耐压的小型集成电路很简单。 以这种方式，提供了具有高耐压特性但可以作为小尺寸集成电路的零交叉检测电路。

公开(公告)号：US20050270010A1

公开(公告)日：2005-12-08

申请号：US11142729

申请日：2005-06-01

Applicant: Masahiko Ota

Inventor： Masahiko Ota

IPC: H03F3/343 ,  G05F1/56 ,  H03F3/183 ,  G05F3/16

CPC classification number: G05F1/561 ,  H03F3/183

Abstract: A voltage-controlled current source includes an FET mirror connection circuit in which a gate and a drain of a first FET are connected to each other and a gate of a second FET is commonly connected to a connection point between the gate and the drain of the first FET; a third FET which has a source load and which is source-follower connected; a fourth FET of which a gate and a source are directly connected to each other and a connection point between the gate and the drain is connected to a source of the third FET to become the source load; and a fifth FET for inverting a voltage of which a gate is connected to a source of the third FET and a drain is connected to the common connection point of the FET mirror connection circuit. In the voltage-controlled current source, a control voltage is applied to the gate of the third FET, and an output current corresponding to the control voltage is derived from the drain of the second FET.

Abstract translation: 压控电流源包括FET反射镜连接电路，其中第一FET的栅极和漏极彼此连接，第二FET的栅极共同连接到栅极和漏极之间的连接点 第一FET; 具有源极负载并且源极跟随器连接的第三FET; 第四FET，其栅极和源极彼此直接连接，并且栅极和漏极之间的连接点连接到第三FET的源极以成为源极负载; 以及第五FET，用于将栅极连接到第三FET的源极的电压和漏极连接到FET反射镜连接电路的公共连接点。 在压控电流源中，向第三FET的栅极施加控制电压，从第二FET的漏极导出与控制电压对应的输出电流。

公开(公告)号：US06965278B2

公开(公告)日：2005-11-15

申请号：US10783704

申请日：2004-02-20

Applicant: Chih-I Lin ,  Klaus Scheiblhofer

Inventor： Chih-I Lin ,  Klaus Scheiblhofer

IPC: H03F3/19 ,  H03F3/343 ,  H03G1/00 ,  H03F1/14

CPC classification number: H03F3/19 ,  H03F3/3432 ,  H03F2200/294 ,  H03F2200/372 ,  H03G1/0088

Abstract: An amplifier circuit comprises a main stage amplifier connected between a RF input and a RF output and at least one secondary stage amplifier, which is connected in parallel to the main stage amplifier between the RF input and the RF output. The secondary stage amplifier comprises an input bipolar transistor, whose collector terminal or emitter terminal is high frequency-coupled to the RF input. The secondary stage amplifier further comprises an output bipolar transistor, whose base terminal is high frequency-coupled to the base terminal of the input bipolar transistor and whose collector terminal or emitter terminal is high frequency-coupled to the RF output. The output bipolar transistor is further coupled to a supply voltage terminal.

公开(公告)号：US06954108B2

公开(公告)日：2005-10-11

申请号：US10979549

申请日：2004-11-01

Applicant: Roy Alan Hastings ,  Lemuel Herbert Thompson, II

Inventor： Roy Alan Hastings ,  Lemuel Herbert Thompson, II

IPC: H02H7/20 ,  H03F1/52 ,  H03F3/04 ,  H03F3/343

CPC classification number: H03F1/52 ,  H03F3/343

Abstract: An amplifier (10″) has a first amplifier stage (14) for producing a control current (IX) in response to an input voltage. A second amplifier stage (16) has first (46) and second (38) transistors. The first transistor (46) is coupled to receive the control current (IX) and is operable to produce a control voltage. The second transistor (38) is coupled to receive the control voltage and operable to produce an output current. A nonlinear resistive element (50) is coupled to the first transistor (46) to add a nonlinear function of the control current (IX) to the control voltage. The nonlinear resistive element (50) may include a third transistor connected between the first transistor (46) and a reference potential, operable to receive the control current (IX) and to generate the nonlinear function thereof.

Abstract translation: 放大器（10“）具有用于响应于输入电压产生控制电流（I SUB）的第一放大器级（14）。 第二放大器级（16）具有第一（46）和第二（38）晶体管。 第一晶体管（46）被耦合以接收控制电流（I SUB X），并且可操作以产生控制电压。 第二晶体管（38）被耦合以接收控制电压并且可操作以产生输出电流。 非线性电阻元件（50）耦合到第一晶体管（46），以将控制电流（I SUB X）的非线性函数加到控制电压上。 非线性电阻元件（50）可以包括连接在第一晶体管（46）和参考电位之间的第三晶体管，可操作以接收控制电流（I SUB）并产生其非线性函数。