公开(公告)号：WO2017039780A1

公开(公告)日：2017-03-09

申请号：PCT/US2016/037763

申请日：2016-06-16

Applicant: CYPRESS SEMICONDUCTOR CORPORATION

Inventor： SUGINO, Rinji ,  BELL, Scott ,  XUE, Lei

IPC: H01L21/336 ,  H01L27/115 ,  H01L29/788

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L27/11565 ,  H01L27/1157

Abstract: A method of forming a vertical non-volatile (NV) memory device such as 3-D NAND flash memory includes forming a vertical NV memory cell string within an opening disposed in a stack of alternating layers of a first layer and a second layer over a substrate, and dividing the vertical NV memory cell string into two halves with a first vertical deep trench and an isolation dielectric pillar formed in the first vertical deep trench, such that memory bit density of the divided vertical NV memory cell strings double the memory bits of the device.

Abstract translation: 形成诸如3-D NAND闪速存储器的垂直非易失性（NV）存储器件的方法包括在布置在第一层和第二层的交替层的堆叠中的开口内形成垂直NV存储单元串 衬底，并且将垂直NV存储单元串划分成具有形成在第一垂直深沟槽中的第一垂直深沟槽和隔离介电柱的两半，使得划分的垂直NV存储单元串的存储器位密度将存储器位的两倍 装置。

公开(公告)号：WO2017039784A1

公开(公告)日：2017-03-09

申请号：PCT/US2016/038229

申请日：2016-06-17

Applicant: CYPRESS SEMICONDUCTOR CORPORATION

Inventor： ZHANG, Renhua ,  XUE, Lei ,  SUGINO, Rinji

IPC: H01L27/115 ,  H01L29/792 ,  H01L21/3205 ,  H01L21/02

CPC classification number: H01L27/11582 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28282 ,  H01L21/31111 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1157 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/161 ,  H01L29/167 ,  H01L29/513 ,  H01L29/518

Abstract: A 3-D/vertical non-volatile (NV) memory device such as 3-D NAND flash memory and fabrication method thereof, the NV memory device includes vertical openings disposed in a stack of alternating stack layers of first stack layers and second stack layers over a wafer, a multi-layer dielectric disposed over an inner sidewall of each opening, a first channel layer disposed over the multi-layer dielectric, and a second channel layer disposed over the first channel layer, in which at least one of the first or second channel layers includes polycrystalline germanium or silicon-germanium.

Abstract translation: 一种3-D /垂直非易失性（NV）存储器件，例如3-D NAND闪速存储器及其制造方法，NV存储器件包括垂直开口，其设置在第一堆叠层和第二堆叠层的交替堆叠层的堆叠中 设置在每个开口的内侧壁上的多层电介质，设置在所述多层电介质上的第一沟道层和设置在所述第一沟道层上的第二沟道层，其中，所述第一沟道层中的至少一个 或第二通道层包括多晶锗或硅 - 锗。