Abstract:
An integrated microcrystal electron diffraction system and method are provided that include an electron source, a sample assembly configured to retain a sample, a camera assembly, and a control system. The control system pre-screens the sample on the sample assembly, collects image data of the sample via the camera assembly, and outputs microcrystal electron diffraction data based on the image data. Pre-screening includes capturing at least one pre-screen diffraction image of the sample; determining a position for the sample for imaging based on the at least one pre-screen diffraction image; and controlling the sample assembly to position the sample at the position. Collecting the image data includes generating an electron beam towards the sample at the position; rotating the sample assembly; and capturing, by the camera assembly, scatterings of the electron beam by the sample as diffraction images while the sample assembly is rotated.
Abstract:
What is proposed is an apparatus (100) for analysing and/or processing a sample (10) with a particle beam (110), comprising:a providing unit (106) for providing the particle beam (110); a shielding element (202) for shielding an electric field (E) generated by charges (Q) accumulated on the sample (10), wherein the shielding element (202) has a through opening (206) for the particle beam (110) to pass through towards the sample (10); a detecting unit (112) configured to detect an actual position of the shielding element (202); and an adjusting unit (600) for adjusting the shielding element (202) from the actual position into a target position.
Abstract:
A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.
Abstract:
A histogram-based method for auto segmentation of integrated circuit structures is disclosed. The method includes an auto-segmentation process/algorithm, which works on the histogram of the SEM image and does not try to model the noise sources or the features. The auto-segmentation process/algorithm extracts the number of peaks in the histogram from low magnification SEM images or SEM images not necessarily having high quality images, significantly simplifies the traditionally lengthy and expensive IC reverse engineering efforts. Hence, the size of the image does not affect the final segmentation. The auto-segmentation process/algorithm performs the steps of: extract a first histogram from the first SEM image; identifying boundaries of the plurality of structural elements in the IC based at least in part on an output of the first histogram; and auto-segmenting the first SEM image into the plurality of structural elements.
Abstract:
A system and a method for monitoring a beam (322) in an inspection system are provided. The system includes an image sensor (360) configured to collect a sequence of images of a beam spot of a beam formed on a surface (340), each image of the sequence of images having been collected at a different exposure time of the image sensor, and a controller (380) configured to combine the sequence of images to obtain a beam profile of the beam.
Abstract:
Disclosed here is a scanning probe microscope system and method for operating the same for producing scanning probe microscope images at fast scan rates and reducing oscillation artifacts. In some embodiments, an inverse consistent image registration method is used to align forward and backward scan traces for each line of the scanning microscope image. In some embodiments, the aligned forward and backward scan traces are combined using a weighting factor favoring the scan trace with higher smoothness. In some embodiments, the scanning probe microscope image is a potentiometry map and a method is provided to extract from the potentiometry map a conductivity map.
Abstract:
Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N 2 ) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF 3 , N 2 F 4 , F 2 , SiF4, WF 6 , PF 3 , PF 5 , AsF 3 , AsF 5 , CF 4 and other fluorinated hydrocarbons of C x F y (x≥1, y≥1) general formula, SF 6 , HF, COF 2 , OF 2 , BF 3 , B 2 F 4 , GeF 4 , XeF 2 , O 2 , N 2 O, NO, NO 2 , N 2 O 4 , and O 3 , and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H 2 , NH 3 , N 2 H 4 , B 2 H 6 , AsH 3 , PH 3 , SiH 4 , Si 2 H 6 , H 2 S, H 2 Se, CH 4 and other hydrocarbons of C x H y (x≥1, y≥1) general formula and GeH 4 .
Abstract:
A charged particle beam system is disclosed, comprising: -a charged particle beam generator for generating a beam of charged particles; -a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; -a source for providing a cleaning agent; -a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: -a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and -at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.
Abstract:
A high voltage feedthrough assembly (100) for providing an electric potential in a vacuum environment comprises a flange connector (10) being adapted for a connection with a vacuum vessel (201), wherein the flange connector (10) has an inner side (11) facing to the vacuum vessel (201) and an outer side (12) facing to an environment of the vacuum vessel 201, a vacuumtight insulator tube (20) having a longitudinal extension with a first end (21) facing to the flange connector (10) and a second end (22) being adapted for projecting into the vacuum vessel (201), and an electrode device (30) coupled to the second end (22) of the insulator tube (20), wherein the electrode device (30) has a front electrode (31), including a photocathode or a field emitter tip and facing to the vacuum vessel (201) and a cable adapter (32) for receiving a high-voltage cable (214), wherein a flexible tube connector (40) is provided for a vacuum-tight coupling of the insulator tube (20) with the flange connector (10), and a manipulator device (50) is connected with the insulator tube (20) for adjusting a geometrical arrangement of the insulator tube (20) relative to the flange connector (10). Furthermore, an electron diffraction or imaging apparatus (transmission electron microscope, TEM) 200 for static and/or time-resolved diffraction, including (nano-) crystallography, and real space imaging for structural investigations including the high voltage feedthrough assembly (100) and a method of manipulating an electrode device (30) in a vacuum environment are described.
Abstract:
A method for warming a rotational interface in an ion implantation environment provides a scan arm configured to rotate about a first axis and an end effector coupled to the scan arm via a motor to selectively secure a workpiece. The end effector is configured to rotate about a second axis having a bearing and a seal associated with the second axis and motor. The motor is activated, and the rotation of motor is reversed after a predetermined time or when the motor faults due to a rotation the end effector about the second axis. A determination is made as to whether the rotation of the end effector about the second axis is acceptable, and the scan arm is reciprocated about the first axis when the rotation of the end effector is unacceptable, wherein inertia of the end effector causes a rotation of the end effector about the second axis.