Abstract:
Disclosed is a method negative imaging method for making a metal pattern with high conductivity comprising providing a patterned substrate comprising a patterned catalyst layer on a base substrate by a thermal imaging method followed by plating to provide the metal pattern. The metal patterns provided are suitable for electrical devices including electromagnetic interference shielding devices and touchpad sensors.
Abstract:
The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.
Abstract:
The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
Abstract:
The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.
Abstract:
This invention relates to inks comprising molecular precursors to copper indium gallium sulfide/selenide (CIGS/Se) and a plurality of particles. The inks are useful for preparing coatings and films of CIGS/Se on substrates. Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and films and also to processes for making photovoltaic devices.
Abstract:
This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.
Abstract:
This invention relates to processes for preparing films of CTS and CZTS and their selenium analogues on a substrate. Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices.
Abstract:
Olefin polymerizations employing a complex of a Group 8, 9, or 10 transi-tion metal with a bidentate ligand as part of the polymerization catalyst system are improved by adding to the polymerization a silicon compound in which at least one atom of a Group 15 or 16 element is bound to a silicon atom. The polymerizations often have increased polymer productivity and/or the polymerization catalyst has a longer half life.
Abstract:
Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, α-olefins and/or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.
Abstract:
Certain complexes containing ligands having a phosphino group, amino group or an imino group, and a second functional group such as amide, ester or ketone, when complexed to transition metals, catalyze the (co)polymerization of olefinic compounds such as ethylene, &agr;-olefins and/or acrylates. A newly recognized class of ligands for making copolymer containing polar monomers using late transition metal complexes is described.