中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

22 records (took 0.028 seconds)

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES
    11.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开
    化学机械抛光（CMP）组合物用于抛光包含基材的钴和/或钴合金的用途

    公开(公告)号：WO2017162462A1

    公开(公告)日：2017-09-28

    申请号：PCT/EP2017/055826

    申请日：2017-03-13

    Applicant: BASF SE

    Inventor： LAUTER, Michael ,  GUEVENC, Haci Osman ,  SIEBERT, Max ,  LAN, Yongqing ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu

    IPC: C09G1/04

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a poly(amino acid) and or a salt thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

    Abstract translation: 化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基材（S）的化学机械抛光的用途，其中所述CMP组合物 （Q）包含（A）无机颗粒（B），聚氨基酸和/或其盐（C）至少一种氨基酸，（D）至少一种氧化剂（E），水性介质，并且其中所述CMP组合物 （Q）的pH值为7-10。

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES
    12.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT COMPRISING SUBSTRATES 审中-公开
    使用化学机械抛光（CMP）组合物，用于抛光包含衬底的钴

    公开(公告)号：WO2017025536A1

    公开(公告)日：2017-02-16

    申请号：PCT/EP2016/068964

    申请日：2016-08-09

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza M. ,  WEI, Te Yu ,  GUEVENC, Haci Osman ,  PROELSS, Julian ,  LEUNISSEN, Leonardus

    IPC: C09G1/02

    CPC classification number: C09G1/02

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and /or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer ≥ 1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

    Abstract translation: 使用化学机械抛光（CMP）组合物（Q）用于包括（i）钴和/或（ii）钴合金和（iii）TiN和/或TaN的基底（S）的化学机械抛光，其中 CMP组合物（Q）包含（E）无机颗粒（F）至少一种包含氨基和酸基（Y）的有机化合物，其中所述化合物包含n个氨基和至少n + 1个酸性质子，其中n （G）至少一种氧化剂，其量相对于相应的CMP组合物的总重量为0.2至2.5重量％，（H）其中CMP组合物（Q）具有的水性介质 pH大于6且小于9。

    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES
    16.
    发明申请
    USE OF A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR POLISHING OF COBALT AND / OR COBALT ALLOY COMPRISING SUBSTRATES 审中-公开
    化学机械抛光（CMP）组合物用于抛光包含基材的钴和/或钴合金的用途

    公开(公告)号：WO2017186283A1

    公开(公告)日：2017-11-02

    申请号：PCT/EP2016/059363

    申请日：2016-04-27

    Applicant: BASF SE

    Inventor： REICHARDT, DR.,, Robert ,  SIEBERT, DR.,, Max ,  LAN, Yongqing ,  LAUTER, DR., Michael ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIN, Reza ,  GUEVENC , DR., Haci Osman ,  PROELSS, DR., Julian ,  LEUNISSEN, DR.,, Leonardus

    IPC: C09G1/02 ,  H01L21/321

    CPC classification number: H01L21/3212 ,  C09G1/02

    Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C 5 -C 20 -alkyl, C 5 -C 20 -alkenyl, C 5 -C 20 -alkylacyl or C 5 -C 20 -alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

    Abstract translation: 化学机械抛光（CMP）组合物（Q）用于包含（i）钴和/或（ii）钴合金的基材（S）的化学机械抛光的用途，其中所述CMP组合物 （Q）包含：（A）无机颗粒（B）通式（I）RS的阴离子表面活性剂，其中R为C 5 -C 20的烷基， C 5 -C 20 - 烯基，C 5 -C 20 - 烷基酰基或C 5 - / - 亚烷基 （C）至少一种氨基酸，（D）至少一种氨基酸，（C）至少一种氨基酸，（C）至少一种氨基酸， （E）水性介质，并且其中所述CMP组合物（Q）具有7至10的pH。

    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION
    17.
    发明申请
    A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION 审中-公开
    化学机械抛光（CMP）组合物

    公开(公告)号：WO2016008896A1

    公开(公告)日：2016-01-21

    申请号：PCT/EP2015/066086

    申请日：2015-07-14

    Applicant: BASF SE

    Inventor： REICHARDT, Robert ,  SIEBERT, Max ,  LAN, Yongqing ,  LAUTER, Michael ,  GUEVENC, Haci Osman ,  PRÖLSS, Julian ,  USMAN IBRAHIM, Sheik Ansar ,  GOLZARIAN, Reza

    IPC: C09G1/00

    CPC classification number: C09G1/02 ,  C09G1/00

    Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0,2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0,001 to 0,02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

    Abstract translation: 化学机械抛光（CMP）组合物（Q），其包含（A）基于相应CMP组合物的总重量的总量为0.0001至2.5重量％的胶体或热解无机颗粒（A）或其混合物 （B）基于相应CMP组合物（C）的总重量，总量为0.2至1重量％的至少一个氨基酸至少一种腐蚀抑制剂，总量为0.001至0 ，相对于相应的CMP组合物（E）的总量，基于相对于CMP组合物（D）的总重量为02重量％，基于过氧化氢作为氧化剂的总重量为0.0001重量％至2重量％ 水性介质，其中CMP组成（Q）的pH在6至9.5的范围内。

    AN AQUEOUS POLISHING AGENT COMPRISING SOLID POLYMER PARTICLES AND TWO COMPLEXING AGENTS AND ITS USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES
    18.
    发明申请
    AN AQUEOUS POLISHING AGENT COMPRISING SOLID POLYMER PARTICLES AND TWO COMPLEXING AGENTS AND ITS USE IN A PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES 审中-公开
    包含固体聚合物颗粒和两种复合剂的水性抛光剂及其用于抛光图案和非结构化金属表面的工艺

    公开(公告)号：WO2010127938A1

    公开(公告)日：2010-11-11

    申请号：PCT/EP2010/055122

    申请日：2010-04-19

    Applicant: BASF SE ,  RAMAN, Vijay Immanuel ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing

    Inventor： RAMAN, Vijay Immanuel ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

    Abstract: An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound interacting and forming strong, water-soluble complexes with the metal and causing an increase of the material removal rate MRR and the static etch rate SER with increasing concentration of the compound (B); and (C) a dissolved organic non-polymeric compound interacting and forming slightly soluble or insoluble complexes with the metal, which complexes are capable of being adsorbed by the metal surfaces, and causing a lower increase of the MRR than the compound (B) and a lower increase of the SER than the compound (B) or no increase of the SER with increasing concentration of the compound (C); a CMP process comprising selecting the components (A) to (C) and the use of the CMP agent and process for polishing wafers with ICs.

    Abstract translation: 一种水性CMP剂，其包含（A）与待抛光表面的金属相互作用并形成强复合物的固体聚合物颗粒; （B）溶解的有机非聚合化合物与金属相互作用并形成强的水溶性络合物，并且随着化合物（B）的浓度增加而导致材料去除速率MRR和静态蚀刻速率SER的增加; 和（C）溶解的有机非聚合化合物与金属相互作用并形成微溶或不溶性的络合物，该配合物能够被金属表面吸附，并导致MRR比化合物（B）和 化合物（B）的SER增加较少，或化合物（C）的浓度随着浓度增加而不增加; CMP工艺包括选择组分（A）至（C）以及使用CMP剂和用IC抛光晶片的方法。

    AN AQUEOUS METAL POLISHING AGENT COMPRISING A POLYMERIC ABRASIV CONTAINING PENDANT FUNCTIONAL GROUPS AND ITS USE IN A CMP PROCESS
    19.
    发明申请
    AN AQUEOUS METAL POLISHING AGENT COMPRISING A POLYMERIC ABRASIV CONTAINING PENDANT FUNCTIONAL GROUPS AND ITS USE IN A CMP PROCESS 审中-公开
    含有包含功能性组合物的聚合物和在CMP工艺中使用的水性金属抛光剂

    公开(公告)号：WO2010127937A1

    公开(公告)日：2010-11-11

    申请号：PCT/EP2010/055121

    申请日：2010-04-19

    Applicant: BASF SE ,  RAMAN, Vijay Immanuel ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing

    Inventor： RAMAN, Vijay Immanuel ,  GUBAYDULLIN, Ilshat ,  LI, Yuzhuo ,  BRANDS, Mario ,  LAN, Yongqing

    IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/3212

    Abstract: (A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of the surfaces to be polished, and pendant functional groups (a2) capable of interacting less strongly with the metal of the surfaces to be polished than the functional groups (a1); and (B) an organic non-polymeric compound dissolved in the aqueous phase and capable of interacting and forming strong, water-soluble complexes with the metal of the surfaces to be polished and causing an increase of the material removal rate MRR and the static etch rate SER of the metal surfaces to be polished with increasing concentration of the compound (B); a CMP process comprising selecting (A) and (B) and the use of the CMP agent and process for polishing wafers with ICs.

    Abstract translation: （A）固体聚合物颗粒细分散在水相中并含有能够与待抛光表面的金属强烈相互作用并形成强复合物的侧链官能团（a1），以及能够相互作用较少的侧链官能团（a2） 与待处理表面的金属强度相比，官能团（a1）; 和（B）溶解在水相中的有机非聚合化合物，并且能够与要抛光的表面的金属相互作用并形成强的水溶性络合物，并引起材料去除速率MRR和静态蚀刻的增加 随着化合物（B）浓度的增加而要抛光的金属表面的速率SER; CMP工艺，包括选择（A）和（B）以及使用CMP剂和用IC抛光晶片的工艺。

Patent Agency Ranking