公开(公告)号：WO2008093933A1

公开(公告)日：2008-08-07

申请号：PCT/KR2007/006725

申请日：2007-12-21

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L31/04

CPC classification number: H01L31/0468 ,  H01L31/0465 ,  Y02B10/12 ,  Y02E10/50

Abstract: Provided is a semitransparent crystalline silicon thin film solar cell using a crystalline silicon thin film, including a transparent substrate, an antireflection layer, first transparent electrodes, electricity generation regions, second transparent electrodes, insulating layers. The electricity generation regions include crystalline silicon thin films. Accordingly, the semitransparent crystalline silicon thin film solar cell has a simpler manufacturing process as compared with a semitransparent thin film solar cell using a conventional amorphous thin film and can control transmittance by controlling a thickness of the crystalline thin film without additional apparatuses.

Abstract translation: 提供一种半透明结晶硅太阳能电池，其使用包括透明基板，抗反射层，第一透明电极，发电区域，第二透明电极，绝缘层的晶体硅薄膜。 发电区域包括晶体硅薄膜。 因此，与使用常规非晶薄膜的半透明薄膜太阳能电池相比，半透明晶体硅薄膜太阳能电池具有更简单的制造工艺，并且可以通过控制晶体薄膜的厚度而无需额外的装置来控制透射率。

公开(公告)号：WO2007148891A1

公开(公告)日：2007-12-27

申请号：PCT/KR2007/002876

申请日：2007-06-14

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  WON, Jun Ho

Inventor： LEE, Byoung Su ,  WON, Jun Ho

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract translation: 提供了使用背照式光电二极管的图像传感器及其制造方法。 根据本发明，由于可以稳定地对背照式光电二极管的表面进行处理，因此可以将背照式光电二极管形成为具有低暗电流，对于所有光电二极管的蓝光的灵敏度恒定和高灵敏度。 另外，通过采用在不同基板上分别形成光电二极管和逻辑电路的三维结构，可以制造高密度的图像传感器。

公开(公告)号：WO2006093386A1

公开(公告)日：2006-09-08

申请号：PCT/KR2006/000712

申请日：2006-03-02

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L21/60

CPC classification number: H01L24/81 ,  H01L25/50 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/00014

Abstract: A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al 0.83 Cu 0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Abstract translation: 提供了一种在不影响形成在两个半导体衬底上的电路的低温下形成在两个半导体衬底上的铝（Al）电极的接合方法。 该方法包括：（a）分别在两个半导体衬底上形成铝（Al）电极，并将包含铝（Al）和铜（Cu）的金属合金沉积到铝（Al）电极上; （b）使两个半导体衬底的铝（Al）电极彼此面对; 和（c）在低于沉积的金属合金的熔点的温度下加热铝（Al）电极，并在两个半导体衬底上施加特定的压力。 因此，可以在低于Al 0.83 Cu 0.17合金的熔点的温度下进行接合，而不会对在两个半导体衬底上形成的电路产生影响，并且可以 在施加压力的区域选择性地进行。

公开(公告)号：WO2006090992A1

公开(公告)日：2006-08-31

申请号：PCT/KR2006/000566

申请日：2006-02-20

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su ,  OH, Se Jung

Inventor： LEE, Byoung Su ,  OH, Se Jung

IPC: H01L27/146

CPC classification number: H01L31/0749 ,  H01L27/14643 ,  H01L31/1808 ,  H01L31/184 ,  Y02E10/541 ,  Y02E10/544 ,  Y02P70/521

Abstract: A method of manufacturing a photodiode for an image sensor which can drastically improve sensitivity compared to silicon-based devices and is advantageous for miniaturization, and a photodiode manufactured thereby. The method of this invention includes (a) applying a photoresist onto a silicon substrate; (b) forming a recess of a predetermined depth in the silicon substrate through exposure and etching; (c) forming a germanium layer in the recess of the silicon substrate formed in step (b); and (d) subjecting the germanium layer formed in step (c) to crystal growth. According to the method of this invention, even though the germanium layer is formed to be thin on the silicon substrate, since germanium has high light absorption efficiency, superior light intensity properties may be exhibited to those of image sensors based on silicon, resulting in sufficiently absorbed light. Further, small image sensors may be manufactured in this invention.

Abstract translation: 一种制造用于图像传感器的光电二极管的方法，其可以显着提高与硅基器件相比的灵敏度，并且有利于小型化，以及由此制造的光电二极管。 本发明的方法包括（a）在硅衬底上施加光致抗蚀剂; （b）通过曝光和蚀刻在硅衬底中形成预定深度的凹槽; （c）在步骤（b）中形成的硅衬底的凹部中形成锗层; 和（d）使步骤（c）中形成的锗层经受晶体生长。 根据本发明的方法，即使在硅衬底上形成锗层较薄，由于锗具有高的光吸收效率，因此可以显示出基于硅的图像传感器的光强度特性优异，导致足够的 吸收光。 此外，在本发明中可以制造小图像传感器。

公开(公告)号：WO2009075487A3

公开(公告)日：2009-06-18

申请号：PCT/KR2008/007117

申请日：2008-12-03

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

Abstract: There is provided an image sensor with a spectrum sensor including an image sensor region having a plurality of light-detection parts and a spectrum sensor region located in the image sensor region. The present invention provides an advantage of manufacturing alow-cost image sensor with a spectrum sensor. Thus, the image sensor with a spectrum sensor is commercially available to measure the structure and quantity of an organic material in an object in a simple manner.

公开(公告)号：WO2009066937A1

公开(公告)日：2009-05-28

申请号：PCT/KR2008/006835

申请日：2008-11-20

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H04N13/04

CPC classification number: G02B27/2214 ,  H04N13/315

Abstract: The present invention relates to a 3-D image display device using a flat panel display unit capable of, even when a distance between a viewer and a display device is varied, adjusting a viewing distance to display a clear 3-D image depending on a varied distance by differently adjusting a field of view on the flat panel display unit for each display region.

Abstract translation: 本发明涉及一种使用平板显示单元的三维图像显示装置，即使在观看者和显示装置之间的距离变化的情况下，也可以调整观看距离，以根据观看者的显示方式显示清晰的3-D图像 通过在每个显示区域上对平板显示单元进行不同的调整视场来改变距离。

公开(公告)号：WO2008123691A2

公开(公告)日：2008-10-16

申请号：PCT/KR2008/001896

申请日：2008-04-04

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L31/042

CPC classification number: H01L31/18 ,  H01L31/0687 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：WO2008093932A1

公开(公告)日：2008-08-07

申请号：PCT/KR2007/006724

申请日：2007-12-21

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L31/04

CPC classification number: H01L31/022425 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0465 ,  Y02E10/50

Abstract: Provided is a crystalline silicon thin film solar cell which achieves insulation between two or more unit cells by using a thermal oxide layer. The crystalline silicon thin film solar cell achieves insulation between unit cells by using an oxide layer formed by performing thermal oxidation, and after removing portions of the thermal oxide layer, the unit cells are electrically connected to each other by a conductive layer formed on the thermal oxide layer. An insulating layer of the crystalline silicon thin film solar cell can be easily manufactured and has a good insulation property to increases surface characteristics of the cell, so that the solar cell having a high efficiency can be manufactured.

Abstract translation: 提供一种通过使用热氧化层实现两个或更多个单电池之间的绝缘的晶体硅薄膜太阳能电池。 结晶硅薄膜太阳能电池通过使用通过进行热氧化形成的氧化物层来实现单位电池之间的绝缘，并且在去除部分热氧化物层之后，通过在热电偶上形成的导电层将单电池彼此电连接 氧化层。 可以容易地制造晶体硅薄膜太阳能电池的绝缘层，并且具有良好的绝缘性能以增加电池的表面特性，从而可以制造高效率的太阳能电池。

公开(公告)号：WO2007074977A1

公开(公告)日：2007-07-05

申请号：PCT/KR2006/005167

申请日：2006-12-04

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/14685 ,  H01L31/02363 ,  Y02E10/50

Abstract: A photodiode for an image sensor capable of reducing reflection of light incident onto the photodiode and effectively absorbing transmitted light and a method of manufacturing the same are provided. In the photodiode for the image sensor, a silicon concavo-convex surface with a nano-thickness is formed by forming silicon oxide (SiO , x = 0.5-1.5) layer on a silicon substrate and treating the silicon oxide layer with heat. A photodiode region is formed under the silicon layer having convexes and concaves. In this case, light absorptance increases because light reflected on the silicon concavo-convex surface is reincident onto another convex or concave. Therefore, an effective depth of the photodiode is larger than that of a planar photodiode, and accordingly, quantum efficiency of the photodiode increases.

Abstract translation: 提供了能够减少入射到光电二极管上的光的反射并有效吸收透射光的图像传感器的光电二极管及其制造方法。 在用于图像传感器的光电二极管中，通过在硅衬底上形成氧化硅（SiO，x = 0.5-1.5）层并且热处理氧化硅层，形成具有纳米厚度的硅凹凸表面。 在具有凸部和凹部的硅层的下方形成光电二极管区域。 在这种情况下，光吸收率增加，因为在硅凹凸表面上反射的光重新占据另一个凸或凹。 因此，光电二极管的有效深度大于平面光电二极管的有效深度，因此光电二极管的量子效率增加。

公开(公告)号：WO2006121270A1

公开(公告)日：2006-11-16

申请号：PCT/KR2006/001717

申请日：2006-05-08

Applicant: SILICONFILE TECHNOLOGIES INC. ,  LEE, Byoung Su

Inventor： LEE, Byoung Su

IPC: G02B27/22

CPC classification number: G02B27/2264 ,  G02B27/225 ,  H04N13/32 ,  H04N13/354

Abstract: A three-dimensional image display apparatus using a flat panel display unit is provided. The three-dimensional image display apparatus includes a flat panel display unit, reflecting plate arrays reflecting incident light, and a vibrator vibrating the reflecting plate arrays from left to right or from right to left, wherein the reflecting plate arrays are moved according to time by an vibration of the vibrator, and wherein a three dimensional image is displayed by changing an image of the flat panel display unit based on an angle of the reflecting plate arrays. The three-dimensional image display apparatus has advantages that no auxiliary apparatuses such as special glasses are required to recognize a three-dimensional image, and that has no deterioration of an image quality, which is the biggest drawback of a general three-dimensional image display apparatus, and that observation of a three-dimensional image is not limited to one person. Also, the three-dimensional image display apparatus is capable of representing a multi-viewpoint image and selective representation of two-dimensional and three-dimensional images.

Abstract translation: 提供一种使用平板显示单元的三维图像显示装置。 三维图像显示装置包括平板显示单元，反射入射光的反射板阵列和从左向右或从右向左振动反射板阵列的振动器，其中反射板阵列随时间移动 振动器的振动，并且其中通过基于反射板阵列的角度改变平板显示单元的图像来显示三维图像。 三维图像显示装置的优点在于，不需要诸如特殊眼镜的辅助装置来识别三维图像，并且不会降低作为一般三维图像显示的最大缺点的图像质量 装置，并且三维图像的观察不限于一个人。 此外，三维图像显示装置能够表示多视点图像和二维和三维图像的选择性表示。