摘要:
An electronic assembly, comprising a carrier wafer having a top wafer surface and a bottom wafer surface; an electronic integrated circuit being formed in the carrier wafer and comprising a wafer contact pad on the top wafer surface; said carrier wafer comprising a through-wafer cavity joining the top and bottom wafer surfaces; a component chip having a component chip top surface, a component chip bottom surface and component chip side surfaces, the component chip being held in said through-wafer cavity by an attachment material attaching at least one wall of the through-wafer cavity to at least one of the component chip bottom surface and a component chip side surface; said component chip comprising at least one component contact pad on said component chip top substrate; a first conductor connecting said wafer contact pad and said component contact pad.
摘要:
A monolithic electronic device includes a plurality of rigid portions arranged in a polyhedron shape and a plurality of in-plane and out-of-plane deformable portions connecting the plurality of rigid portions to each other. Each of the plurality of rigid portions has an outer side and an opposing inner side. The inner of each of the plurality of rigid portions face an inside of the polyhedron shape. At least some of the plurality of rigid portions include semiconductor devices on both the outer and inner sides. The plurality of rigid portions and the plurality of in-plane and out-of-plane deformable portions are monolithic.
摘要:
Power distribution networks in a three-dimensional (3D) integrated circuit (IC) (3DIC) are disclosed. In one aspect, a voltage drop within a power distribution network in a 3DIC is reduced to reduce unnecessary power dissipation. In a first aspect, interconnect layers devoted to distribution of power within a given tier of the 3DIC are provided with an increased thickness such that a resistance of such interconnect layers is reduced relative to previously used interconnect layers and also reduced relative to other interconnect layers. Further voltage drop reductions may also be realized by placement of vias used to interconnect different tiers, and particularly, those vias used to interconnect the thickened interconnect layers devoted to the distribution of power. That is, the number, position, and/or arrangement of the vias may be controlled in the 3DIC to reduce the voltage drop.
摘要:
An apparatus is described that includes a package on package structure. The package on package structure includes an interposer to implement electrical interconnections between an upper package of the package on package structure and a lower package of the package on package structure. The interposer has packed wires, the packed wires have respective polygonal cross sections.
摘要:
The described embodiments include an interposer with signal routes located therein. The interposer includes a set of sites arranged in a pattern, each site including a set of connection points. Each connection point in each site is coupled to a corresponding one of the signal routes. Integrated circuit chiplets may be mounted on the sites and signal connectors for mounted integrated circuit chiplets may coupled to some or all of the connection points for corresponding sites, thereby coupling the chiplets to corresponding signal routes. The chiplets may then send and receive signals via the connection points and signal routes. In some embodiments, the set of connection points in each of the sites is the same, i.e., has a same physical layout. In other embodiments, the set of connection points for each site is arranged in one of two or more physical layouts.
摘要:
An apparatus is described that includes a semiconductor die package. The semiconductor die package includes a semiconductor die package substrate having a top side and a bottom side. The semiconductor die package includes I/O balls on the bottom side of the semiconductor die package substrate. The I/O balls are to mount to a planar board. The semiconductor die package includes a first semiconductor die mounted on the bottom side of the semiconductor die package substrate. The first semiconductor die is vertically located between the bottom side of the semiconductor die package substrate and a second semiconductor die that is a part of the semiconductor die package.
摘要:
A microelectronic structure (200) and a fabrication method of microelectronic are described. A first package (10) has a first conductive pad (40, 41, 47, 48) formed on a first foundation layer (12). A loop of conductive wire (50-53) is wirebonded to the first conductive pad ((40, 41, 47, 48) of the first foundation layer (12). A mold cap (70) is formed on the first foundation layer (12). A via (90-93) is formed in the mold cap (70) to reach the conductive wire (50-53). A solder structure (80-83) is coupled to the conductive wire(50-53). A second package (100) is connected to the first package (10) by attaching a second solder structure (110-113) of a second package (100) to the first solder structure (80-83) of the first package (10).
摘要:
A system in package and method for making a system in package. A plurality of passive devices are coupled to an interposer. A molding compound envelopes the plurality of passive devices and defines a platform having a substantially planar surface. The interposer is coupled to a substrate. A plurality of integrated circuit dies are coupled in a stack to the planar surface.
摘要:
An apparatus comprises a charge pump packaged with a load that receives charge provided by the charge pump, the charge pump comprising a plurality of switches that, when connected to a plurality of capacitors, cause the plurality of capacitors to assume a selected configuration, wherein the switches are configured to cause transitions between configurations of the capacitors.
摘要:
Discussed generally herein are methods and devices for more reliable Package on Package (PoP) Through Mold Interconnects (TMIs). A device can include a first die package including a first conductive pad on or at least partially in the first die package, a dielectric mold material on the first die package, the mold material including a hole therethrough at least partially exposing the pad, a second die package including a second conductive pad on or at least partially in the second die package the second die package on the mold material such that the second conductive pad faces the first conductive pad through the hole, and a shape memory structure in the hole and forming a portion of a solder column electrical connection between the first die package and the second die package.