公开(公告)号：WO2012097024A2

公开(公告)日：2012-07-19

申请号：PCT/US2012020871

申请日：2012-01-11

Applicant: APPLIED MATERIALS INC ,  LUO QIAN ,  XU YE ,  GUNG TZA-JING ,  TANG XIANMIN

Inventor： LUO QIAN ,  XU YE ,  GUNG TZA-JING ,  TANG XIANMIN

IPC: H01L21/203

CPC classification number: C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  H01J37/3455

Abstract: Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target.

Abstract translation: 本发明的实施方案一般涉及物理气相沉积方法的方法。 方法通常包括使处理室条件与磁控管的位置同步。 当磁控管在目标的第一区域上被扫描时，腔室内的条件被调整到第一组预定的工艺条件。 随着磁控管随后在目标的第二区域上扫描，腔室内的条件被调整到与第一组不同的第二组预定过程条件。 目标可分为两个以上的区域。 通过将磁控管的位置与不同的工艺条件相关联，可以通过减小中心到边缘的不均匀性来改善膜均匀性，例如当磁控管靠近靶的边缘时可能更高的再溅射速率 。

公开(公告)号：WO2012018770A2

公开(公告)日：2012-02-09

申请号：PCT/US2011/046204

申请日：2011-08-02

Applicant: APPLIED MATERIALS, INC. ,  LIU, Guojun ,  TANG, Xianmin ,  LUO, Qian ,  CAO, Yong

Inventor： LIU, Guojun ,  TANG, Xianmin ,  LUO, Qian ,  CAO, Yong

IPC: H01L21/203 ,  H05H1/46

CPC classification number: H01F7/0278 ,  H01J37/3408 ,  H01J37/3461

Abstract: Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber.

Abstract translation: 本文提供用于物理气相沉积（PVD）腔室的磁控管及其使用方法。 在一些实施例中，装置可以包括具有旋转轴线的支撑构件; 多个第一磁体，所述多个第一磁体在所述旋转轴的第一侧上联接到所述支撑构件，并且具有在垂直于所述支撑构件的第一方向上取向的第一极性; 以及第二磁体，所述第二磁体在与所述第一侧相对的所述旋转轴的第二侧上联接到所述支撑构件，并且具有沿与所述第一方向相反的第二方向取向的第二极性。 在一些实施例中，该设备能够形成包括调节物理气相沉积（PVD）室中的局部等离子体均匀性的一个或多个磁性零点的磁场。

公开(公告)号：WO2012015993A2

公开(公告)日：2012-02-02

申请号：PCT/US2011045644

申请日：2011-07-28

Applicant: APPLIED MATERIALS INC ,  LIU ZHENDONG ,  CAO YONG ,  TANG XIANMIN ,  GANDIKOTA SRINIVAS ,  NGUYEN THANH ,  RASHEED MUHAMMAD

Inventor： LIU ZHENDONG ,  CAO YONG ,  TANG XIANMIN ,  GANDIKOTA SRINIVAS ,  NGUYEN THANH ,  RASHEED MUHAMMAD

IPC: H01L21/203 ,  C23C14/35

CPC classification number: H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3461 ,  H01J2237/3323

Abstract: Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed.

Abstract translation: 本文提供了用于沉积具有高厚度均匀性和低电阻率的薄膜的方法和设备。 在一些实施例中，磁控管组件包括分流板，可绕轴线旋转的分流板，耦合到分流板的内部闭环磁极和耦合分流板的外部闭环磁极，其中， 外部闭环磁极的磁场强度与内部闭环磁极的磁场强度小于约1.在一些实施例中，该比率为约0.57。 在一些实施例中，分流板和外闭环磁极具有心形形状。 还公开了一种利用RF和DC电力与本发明的磁控管组合的方法。

公开(公告)号：WO2011143527A3

公开(公告)日：2011-11-17

申请号：PCT/US2011/036395

申请日：2011-05-13

Applicant: APPLIED MATERIALS, INC. ,  RASHEED, Muhammad ,  WANG, Rongjun ,  LIU, Zhendong ,  FU, Xinyu ,  TANG, Xianmin

Inventor： RASHEED, Muhammad ,  WANG, Rongjun ,  LIU, Zhendong ,  FU, Xinyu ,  TANG, Xianmin

IPC: C23C14/34 ,  C23C14/06

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

公开(公告)号：WO2010115128A4

公开(公告)日：2011-03-03

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

公开(公告)号：WO2010115128A2

公开(公告)日：2010-10-07

申请号：PCT/US2010029815

申请日：2010-04-02

Applicant: APPLIED MATERIALS INC ,  ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

Inventor： ALLEN ADOLPH MILLER ,  HAWRYLCHAK LARA ,  XIE ZHIGANG ,  RASHEED MUHAMMAND M ,  WANG RONGJUN ,  TANG XIANMIN ,  LIU ZHENDONG ,  GUNG TZA-JING ,  GANDIKOTA SRINIVAS ,  CHANG MEI ,  COX MICHAEL S ,  YOUNG DONNY ,  SAVANDAIAH KIRANKUMAR ,  GE ZHENBIN

IPC: H01L21/203 ,  C23C14/34

CPC classification number: C23C14/564 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/548 ,  H01J37/32642 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3441 ,  H01J37/3455

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

Abstract translation: 本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。 处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。 该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置 的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

公开(公告)号：WO2010045026A3

公开(公告)日：2010-07-01

申请号：PCT/US2009059108

申请日：2009-09-30

Applicant: APPLIED MATERIALS INC ,  FORSTER JOHN C ,  HOFFMAN DANIEL J ,  PIPITONE JOHN A ,  TANG XIANMIN ,  WANG RONGJUN

Inventor： FORSTER JOHN C ,  HOFFMAN DANIEL J ,  PIPITONE JOHN A ,  TANG XIANMIN ,  WANG RONGJUN

IPC: H01L21/203

CPC classification number: C23C14/3407 ,  H01J37/32082 ,  H01J37/3408 ,  H01J37/347 ,  Y10T156/10

Abstract: The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.

Abstract translation: 本发明通常包括可用于RF溅射工艺中的溅射靶组件。 溅射靶组件可以包括背板和溅射靶。 背板可以被成形为具有从背板朝向溅射靶延伸的一个或多个翅片。 溅射靶可以结合到背板的翅片上。 在溅射过程中使用的RF电流将被施加到在一个或多个鳍位置处的溅射靶。 翅片可以在对应于可以设置在背板后面的磁控管产生的磁场的位置处从背板延伸。 通过控制RF电流耦合到溅射靶以与磁场对准的位置，可以控制溅射靶的侵蚀。

公开(公告)号：WO2009155208A2

公开(公告)日：2009-12-23

申请号：PCT/US2009047103

申请日：2009-06-11

Applicant: APPLIED MATERIALS INC ,  CAO YONG ,  EWERT MAURICE E ,  TANG XIANMIN ,  MILLER KEITH A ,  LUBBEN DANIEL C ,  KELKAR UMESH M ,  GUNG TZA-JING ,  SUBRAMANI ANANTHA K

Inventor： CAO YONG ,  EWERT MAURICE E ,  TANG XIANMIN ,  MILLER KEITH A ,  LUBBEN DANIEL C ,  KELKAR UMESH M ,  GUNG TZA-JING ,  SUBRAMANI ANANTHA K

IPC: C23C14/34 ,  C23C14/54

CPC classification number: C23C14/35 ,  C23C14/046 ,  H01J37/34 ,  H01J37/3447

Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

Abstract translation: 本发明的实施例一般涉及用于均匀溅射沉积到衬底上的高纵横比特征的底部和侧壁中的装置和方法。 在一个实施例中，溅射沉积系统包括准直器，其具有从准直器的中心区域到准直器的外围区域的纵横比减小的孔。 在一个实施例中，准直器经由包括内螺纹紧固件和外螺纹紧固件的组合的支架构件联接到接地屏蔽件。 在另一个实施例中，准直器一体地附接到接地屏蔽。 在一个实施例中，溅射沉积材料的方法包括在高和低值之间使衬底支撑上的偏压脉动。

公开(公告)号：WO2007102970A3

公开(公告)日：2008-10-09

申请号：PCT/US2007003482

申请日：2007-02-08

Applicant: APPLIED MATERIALS INC ,  TANG XIANMIN ,  GOPALRAJA PRABURAM ,  WANG JENN YUE ,  YU JICK

Inventor： TANG XIANMIN ,  GOPALRAJA PRABURAM ,  WANG JENN YUE ,  YU JICK

IPC: C23C14/35

CPC classification number: C23C14/165 ,  C23C14/5873 ,  H01J37/321 ,  H01J37/3266 ,  H01J37/3408 ,  H01J2237/334 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76844

Abstract: A substrate processing method practiced in a plasma sputter reactor (8) including an RF coil (44) and two or more coaxial electromagnets (78, 80), at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.

Abstract translation: 在包括RF线圈（44）和两个或更多个同轴电磁体（78,80）的等离子体溅射反应器（8）中实施的衬底处理方法，其中至少两个以不同的半径缠绕。 在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除 侧壁不对称。 例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。 在一个实施例中，转向拉直晶片边缘附近的轨迹。 在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。 本发明也可以应用于其它材料，例如铜。

公开(公告)号：WO2008027186A3

公开(公告)日：2008-03-06

申请号：PCT/US2007/017967

申请日：2007-08-14

Applicant: APPLIED MATERIALS, INC. ,  WANG, Rongjun ,  CHUNG, Hua ,  TANG, Xianmin ,  WANG, Jenn, Yue ,  WANG, Wei, D. ,  TANAKA, Yoichiro ,  YU, Jick, M. ,  GOPALRAJA, Praburam

Inventor： WANG, Rongjun ,  CHUNG, Hua ,  TANG, Xianmin ,  WANG, Jenn, Yue ,  WANG, Wei, D. ,  TANAKA, Yoichiro ,  YU, Jick, M. ,  GOPALRAJA, Praburam

IPC: C23C14/34 ,  H01L21/302

Abstract: A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).