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    SUITABLY SHORT WAVELENGTH LIGHT FOR LASER ANNEALING OF SILICON IN DSA TYPE SYSTEMS
    21.
    发明申请
    SUITABLY SHORT WAVELENGTH LIGHT FOR LASER ANNEALING OF SILICON IN DSA TYPE SYSTEMS 审中-公开
    DSA型系统中适用于紫外线激光退火的波长光

    公开(公告)号：WO2009134636A2

    公开(公告)日：2009-11-05

    申请号：PCT/US2009/041137

    申请日：2009-04-20

    Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen

    Inventor： MOFFATT, Stephen

    IPC: H01L21/324

    CPC classification number: H01L21/268 ,  B23K26/0608 ,  B23K26/0738 ,  B23K26/083 ,  Y10S438/908

    Abstract: The present invention generally relates to a thermal processing apparatus and method that permits a user to index one or more preselected light sources capable of emitting one or more wavelengths to a collimator. Multiple light sources may permit a single apparatus to have the capability of emitting multiple, preselected wavelengths. The multiple light sources permit the user to utilize multiple wavelengths simultaneously to approximate "white light". One or more of a frequency, intensity, and time of exposure may be selected for the wavelength to be emitted. Thus, the capabilities of the apparatus and method are flexible to meet the needs of the user.

    Abstract translation: 本发明总体上涉及一种热处理装置和方法，其允许用户将能够发射一个或多个波长的一个或多个预选光源索引到准直仪。 多个光源可以允许单个设备具有发射多个预选波长的能力。 多个光源允许用户同时利用多个波长来近似“白光”。 可以为要发射的波长选择一个或多个曝光的频率，强度和时间。 因此，装置和方法的能力是灵活的以满足用户的需要。

    APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES
    25.
    发明申请
    APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
    用于微波加工半导体衬底的装置和方法

    公开(公告)号：WO2012148621A2

    公开(公告)日：2012-11-01

    申请号：PCT/US2012/031140

    申请日：2012-03-29

    Applicant: APPLIED MATERIALS, INC. ,  STOWELL, Michael W. ,  FOAD, Majeed A. ,  HOFMANN, Ralf ,  ADERHOLD, Wolfgang R. ,  MOFFATT, Stephen

    Inventor： STOWELL, Michael W. ,  FOAD, Majeed A. ,  HOFMANN, Ralf ,  ADERHOLD, Wolfgang R. ,  MOFFATT, Stephen

    IPC: H01L21/324

    CPC classification number: H01L21/263 ,  H01L21/324 ,  H01L21/67115 ,  H05B6/702 ,  H05B6/708

    Abstract: Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

    Abstract translation: 提供了使用微波或毫米波能量辐射处理半导体衬底的方法和设备。 微波或毫米波能量可以具有在大约600MHz和大约1THz之间的频率。 来自磁控管的交流电流耦合到具有内部导体和外部导体的泄漏微波发射器，外部导体具有尺寸小于发射辐射的波长的开口。 内导体和外导体由绝缘材料隔开。 通过对发射器的功率进行相位调制和/或通过频率调制功率本身的频率，可以使由微波发射产生的干扰图案均匀化。 来自单个发电机的电力可以通过功率分配器分成两个或更多个发射器。

    LASER BEAM POSITIONING SYSTEM
    26.
    发明申请
    LASER BEAM POSITIONING SYSTEM 审中-公开
    激光束定位系统

    公开(公告)号：WO2011123500A2

    公开(公告)日：2011-10-06

    申请号：PCT/US2011/030453

    申请日：2011-03-30

    Applicant: APPLIED MATERIALS, INC. ,  TERTITSKI, Leonid, M. ,  KUTTANNAIR, Krishna, Kumar ,  HUNTER, Aaron ,  MOFFATT, Stephen

    Inventor： TERTITSKI, Leonid, M. ,  KUTTANNAIR, Krishna, Kumar ,  HUNTER, Aaron ,  MOFFATT, Stephen

    IPC: H01L21/324

    CPC classification number: B23K26/0066 ,  B23K26/0006 ,  B23K26/0823 ,  B23K26/0876 ,  B23K26/12 ,  B23K26/127 ,  B23K2201/40 ,  B23K2203/52 ,  B23K2203/56 ,  Y10T29/41

    Abstract: A method and apparatus for targeting a beam of radiation is provided. A beam steering mirror and a beam capture mirror are movably disposed along an optical pathway. A controller moves the beam steering mirror and the beam capture mirror in an x-y plane, and rotates the mirrors, to target the beam to a target location on a surface, while keeping the optical path length substantially constant for all target locations on the surface. The surface is rotated by a rotational actuator to bring all target locations to positions accessible by the beam targeting optics. Imprecision in targeting and optical path length may be compensated by providing an actuated aperture at the beam entry point and/or a variable focus lens with an optical range finding detector, all in communication with the controller.

    Abstract translation: 提供了一种用于瞄准辐射束的方法和装置。 光束导向镜和光束捕获镜沿着光学路径可移动地设置。 控制器将光束导向反射镜和光束捕获镜移动到x-y平面中，并且使反射镜旋转以将光束瞄准到表面上的目标位置，同时保持光学表面上的所有目标位置的光程长度基本恒定。 该表面由旋转致动器旋转以将所有目标位置移动到由光束瞄准光学器件接近的位置。 可以通过在光束入口点处提供致动孔径和/或具有光学测距探测器的可变焦距透镜来全部与控制器通信来补偿瞄准和光路长度的不精确性。

    CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS
    27.
    发明申请
    CRYSTALLIZATION PROCESSING FOR SEMICONDUCTOR APPLICATIONS 审中-公开
    半导体应用的结晶处理

    公开(公告)号：WO2011066310A2

    公开(公告)日：2011-06-03

    申请号：PCT/US2010/057857

    申请日：2010-11-23

    Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen

    Inventor： MOFFATT, Stephen

    IPC: H01L21/26 ,  H01L31/18 ,  H01L31/042

    CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/403 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/2636 ,  H01L21/268 ,  H01L29/685 ,  H01L31/1872 ,  H01L33/0095 ,  Y02E10/50 ,  Y02P70/521

    Abstract: A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed laser melt/recrystallization process is performed to convert the semiconductor layer to a crystalline layer. Laser, or other electromagnetic radiation, pulses are formed into a pulse train and uniformly distributed over a treatment zone, and successive neighboring treatment zones are exposed to the pulse train to progressively convert the deposited material to crystalline material.

    Abstract translation: 提供了用于在衬底上形成晶体半导体层的方法和设备。 通过气相沉积形成半导体层。 执行脉冲激光熔化/再结晶过程以将半导体层转化为结晶层。 激光或其它电磁辐射脉冲形成脉冲串并均匀分布在处理区域上，并且连续的相邻处理区域暴露于脉冲串以逐渐地将沉积的材料转化成晶体材料。

    FIBER LASER SUBSTRATE PROCESSING
    28.
    发明申请
    FIBER LASER SUBSTRATE PROCESSING 审中-公开
    光纤激光基板加工

    公开(公告)号：WO2010123829A2

    公开(公告)日：2010-10-28

    申请号：PCT/US2010/031632

    申请日：2010-04-19

    Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen

    Inventor： MOFFATT, Stephen

    IPC: H01L21/324

    CPC classification number: B23K26/0604 ,  B23K26/0006 ,  B23K26/12 ,  B23K26/127 ,  B23K2203/56

    Abstract: Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light sources which provide independent control of light pulse duration, shape and repetition rate. Embodiments further provide rapid increases and decreases in intensity of illumination.

    Abstract translation: 本发明的实施例涉及提供对光脉冲持续时间，形状和重复率的独立控制的光源的基板处理设备和方法。 实施例进一步提供了照明强度的快速增加和降低。

    LED SUBSTRATE PROCESSING
    29.
    发明申请
    LED SUBSTRATE PROCESSING 审中-公开
    LED基板加工

    公开(公告)号：WO2010123772A2

    公开(公告)日：2010-10-28

    申请号：PCT/US2010/031403

    申请日：2010-04-16

    Applicant: APPLIED MATERIALS, INC. ,  MOFFATT, Stephen

    Inventor： MOFFATT, Stephen

    IPC: H01L21/324 ,  H01L33/48

    CPC classification number: H01L21/67115

    Abstract: Embodiments of the present invention pertain to substrate processing equipment and methods incorporating light emitting diodes (LEDs) for thermally processing substrates. Such light sources offer a variety of advantages including higher efficiency and more rapid response times. Pulse widths are selectable down to under a millisecond but can be for long pulses up to and exceeding a second. LEDs are preferable to tungsten-halogen lamps even in circumstances that allow longer processing times, since LEDs produce light with greater than 50% efficiency and tungsten-halogen lamps operate with less than 5% efficiency.

    Abstract translation: 本发明的实施例涉及用于热处理衬底的发光二极管（LED）的衬底处理设备和方法。 这种光源提供了各种优点，包括更高的效率和更快的响应时间。 脉冲宽度可选择低于一毫秒，但可以长达一秒以上的长脉冲。 即使在允许更长处理时间的情况下，LED也优于卤钨灯，因为LED产生效率高于50％的光，而卤素灯以低于5％的效率工作。

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