APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION
    1.
    发明申请
    APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION 审中-公开
    通过激光衍射测量三维半导体结构温度的装置和方法

    公开(公告)号:WO2013070917A1

    公开(公告)日:2013-05-16

    申请号:PCT/US2012/064153

    申请日:2012-11-08

    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.

    Abstract translation: 本发明的实施例一般涉及用于测量和监测其上具有3D特征的基板的温度的方法的装置。 该装置包括用于照射其上具有3D特征的基板的光源,用于聚焦和聚焦反射光的聚焦透镜,以及用于检测聚焦反射光的发射率的发射计。 该装置还可以包括分束器和成像装置。 成像装置提供反射光的衍射图案的放大图像。 该方法包括用光照射具有3D特征的基板,并且将聚焦透镜聚焦在反射光上。 然后将聚焦的光导向传感器,并测量衬底的发射率。 反射光也可能撞击成像装置以产生反射光的衍射图案的放大图像。

    APERTURE CONTROL OF THERMAL PROCESSING RADIATION
    4.
    发明申请
    APERTURE CONTROL OF THERMAL PROCESSING RADIATION 审中-公开
    热处理辐射的孔径控制

    公开(公告)号:WO2013191863A1

    公开(公告)日:2013-12-27

    申请号:PCT/US2013/043401

    申请日:2013-05-30

    CPC classification number: G03F7/7025 G03F7/70858

    Abstract: Device for processing a substrate are described herein. Devices can include a radiation source and an aperture positioned to receive radiant energy from the radiation source. The aperture can include one or more members, and one or more interfering areas, wherein the interfering areas surround a transmissive area. The one or more structures can affect transmission of radiant energy through a portion of the transmissive area of the aperture. Structures disposed on the aperture can reduce or redirect transmission to provide for more uniform overall transmission of radiant energy through the aperture.

    Abstract translation: 本文描述了用于处理衬底的装置。 设备可以包括辐射源和定位成接收来自辐射源的辐射能的孔。 孔可以包括一个或多个构件以及一个或多个干扰区域,其中干扰区域围绕透射区域。 一个或多个结构可以影响通过孔的透射区域的一部分的辐射能的传输。 设置在孔径上的结构可以减少或重定向透射以提供通过孔径的辐射能的更均匀的全面透射。

    LASER CRYSTALLIZATION AND POLYCRYSTAL EFFICIENCY IMPROVEMENT FOR THIN FILM SOLAR
    8.
    发明申请
    LASER CRYSTALLIZATION AND POLYCRYSTAL EFFICIENCY IMPROVEMENT FOR THIN FILM SOLAR 审中-公开
    薄膜太阳能电池的激光晶体化和多晶体效率提高

    公开(公告)号:WO2013109328A2

    公开(公告)日:2013-07-25

    申请号:PCT/US2012/061676

    申请日:2012-10-24

    Inventor: MOFFATT, Stephen

    Abstract: Apparatus and methods of thermally processing semiconductor substrates are disclosed. Aspects of the apparatus include a source of intense radiation and a rotating energy distributor that distributes the intense radiation to a rectifier. The rectifier directs the radiation toward the substrate. Aspects of the method include using a rotating energy distributor to distribute pulsed energy to a substrate for processing. The rotational rate of the energy distributor is set based on the pulse repetition rate of the energy source. A substrate may be continuously translated with respect to the energy distributor at a rate set based on the pulse repetition rate of the energy source.

    Abstract translation: 公开了热处理半导体衬底的设备和方法。 装置的各个方面包括强辐射源和将强辐射分配到整流器的旋转能量分配器。 整流器将辐射导向基板。 该方法的各方面包括使用旋转能量分配器来将脉冲能量分配到基板以进行处理。 能量分配器的转速基于能量源的脉冲重复率来设定。 衬底可以以基于能量源的脉冲重复率设置的速率相对于能量分配器连续平移。

    PULSE CIRCULATOR
    10.
    发明申请
    PULSE CIRCULATOR 审中-公开
    脉冲循环器

    公开(公告)号:WO2012170567A2

    公开(公告)日:2012-12-13

    申请号:PCT/US2012/041144

    申请日:2012-06-06

    Inventor: MOFFATT, Stephen

    Abstract: A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has a pulsed energy source that directs pulsed energy toward a substrate. A homogenizer increases the spatial uniformity of the pulsed energy. A pulse shaping system shapes the temporal profile of the pulsed energy. A pulse circulator may be selected using a bypass system. The pulse circulator allows a pulse of energy to circulate around a path of reflectors, and a partial reflector allows a portion of the pulse to exit the pulse circulator with each cycle. The pulse circulator may have delaying elements and amplifying elements to tailor the pulses exiting from the circulator.

    Abstract translation: 公开了半导体衬底退火的方法和装置。 该装置具有将脉冲能量引向衬底的脉冲能量源。 均化器增加了脉冲能量的空间均匀性。 脉冲整形系统对脉冲能量的时间分布进行整形。 可以使用旁路系统选择脉冲循环器。 脉冲循环器允许能量脉冲围绕反射器的路径循环,并且部分反射器允许脉冲的一部分在每个周期内离开脉冲循环器。 脉冲循环器可以具有延迟元件和放大元件以调节从循环器排出的脉冲。

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