Abstract:
A memory device includes a non-volatile memory to store data, an execution trace buffer, and a media controller. The media controller receives data-modifying commands and adds the data-modifying commands to the execution trace buffer. The media controller executes the data-modifying commands to modify the data stored in the non-volatile memory and detects errors in the data stored in the non-volatile memory. The media controller repeats execution of data-modifying commands from the execution trace buffer in response to detecting an error.
Abstract:
Addresses of memory cells that have errors corrected by error correction operations are evaluated to identify a failed row of memory. A post package repair is implemented on the failed row with a method comprising obtaining indications of the error correction operations, logging addresses of memory cells having errors corrected by the error correction operations, evaluating the addresses to identify the failed row, and implementing the post package repair operation on the failed row.
Abstract:
In a nonvolatile memory block that contains separately-selectable sets of NAND strings, a bit line current sensing unit is configured to sense bit line current for a separately-selectable set of NAND strings of the block. A bit line voltage adjustment unit is configured to apply a first and second bit line voltages to separately-selectable sets of NAND strings that have bit line currents greater and less than the minimum current respectively, the second bit line voltage being greater than the first bit line voltage.
Abstract:
Some embodiments include apparatuses and methods having an interface to receive information from memory cells, the memory cells configured to have a plurality of states to indicate values of information stored in the memory cells, and a control unit to monitor errors in information retrieved from the memory cells. Based on the errors in the information, the control unit generates control information to cause the memory cell to change to from a state among the plurality of states to an additional state. The additional state is different from the plurality of states.
Abstract:
Disclosed are improved methods and structures for verifying integrated circuits and in particular systems-on-a-chip constructed therefrom. Our methods - which we call Quick Error Detection - Hardware (QED-H) - advantageously quickly detect and fix anomalies (bugs) within SoC hardware components - and in particular customized SoC hardware components that are not necessarily software programmable. Of further advantage, methods according to the present disclosure are compatible with existing Quick Error Detection (QED) techniques while being extensible to target software-programmable components as well. In sharp contrast to prior art methods, method(s) according to the present disclosure represent a new system validation methodology that builds validation checks in both software and hardware components seamlessly and systematically, thus enabling extremely quick error detection and localization for all digital components of the entire SoC advantageously producing productivity and time-to-market gains.
Abstract:
A memory subsystem enables managing error correction information. A memory device internally performs error detection for a range of memory locations, and increments an internal count for each error detected. The memory device includes ECC logic to generate an error result indicating a difference between the internal count and a baseline number of errors preset for the memory device. The memory device can provide the error result to an associated host of the system to expose only a number of errors accumulated without exposing internal errors from prior to incorporation into a system. The memory device can be made capable to generate internal addresses to execute commands received from the memory controller. The memory device can be made capable to reset the counter after a first pass through the memory area in which errors are counted.
Abstract:
A method of operating a storage controller is provided. The method includes receiving first host data traffic from a host, for storage in a first partition within a storage system, the first host data traffic formatted for storage in a first type of data storage, and translating the first host data traffic into storage data, the storage data formatted for storage in a second type of data storage. The method further includes storing the storage data in the first partition, receiving a read request from the host through the host interface, and retrieving some or all of the storage data from the first partition. The method also includes formatting the some or all of the storage data into a format compatible with the first host data traffic, and transferring the formatted data to the host in a configuration corresponding to the first type of data storage.
Abstract:
A page data (e.g., upper page data) received from a host is stored in a transfer buffer of a controller of a solid state drive. Another page data (e.g., lower page data) is read from a non-volatile memory (e.g., a NAND memory) to store in the transfer buffer as an error corrected page data. The error corrected page data and the page data are written to the non-volatile memory. In additional embodiments, a controller loads a page data (e.g., upper page data) received from the host in one or more NAND page buffers. The controller reads another page data (e.g., lower page data) from a NAND memory to store in a transfer buffer as an error corrected page data. The error corrected page data stored in the transfer buffer is loaded to the one or more NAND page buffers.