摘要:
A method for producing a film of compound semiconductor includes providing a substrate and a compound bulk material having a first chemical composition that includes at least one first chemical element and a second chemical element. A film is deposited on the substrate using the compound bulk material as a single source of material. The deposited film has a composition substantially the same as the first chemical composition. A residual chemical reaction is induced in the deposited film using a source containing the second chemical element to thereby increase the content of the second chemical element in the deposited film so that the deposited film has a second chemical composition. The film may be employed in a photovoltaic device.
摘要:
The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
摘要:
Die Erfindung betrifft ein Photovoltaikmodul auf Metallbandsubstratbasis, welches über den Schichtaufbau eine monolithische Verschaltung ermöglicht, wobei die Substratoberfläche so strukturiert ist, dass durch eine Oberflächenvergrößerung und eine Verminderung der Reflexion bzw. eine gezielte Reflexion eine Wirkungsgradsteigerung von bis zu 20% erreicht wird. Die Erfindung betrifft ebenfalls ein Solarabsorbermodul auf Metallbandsubstratbasis, wo der lichtoptische Effekt in gleicher Weise genutzt und damit der Wirkungsgrad in gleicher Weise gesteigert wird.
摘要:
Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition profiles across the absorber structures for use in photovoltaic devices.
摘要:
This disclosure describes devices and methods in which photovoltaic cells are configured such that an active layer of a photovoltaic cell is protected against an environmental condition by another active cell layer that is more robust against the environmental condition. In one aspect, the disclosure describes a multi-junction photovoltaic device that includes (a) an upper photovoltaic cell portion that has a first plurality of active layers of films, at least a subset of which form an upper photovoltaic sub-cell and (b) a lower photovoltaic cell portion disposed below the upper photovoltaic cell portion that has a second plurality of layers of films, at least a subset of which form a lower photovoltaic sub-cell. The first plurality of active layers, of the upper cell portion, include at least two layers of films having different degrees of robustness from each other against environmental conditions, such as exposure to water or oxygen. The two active layers are disposed such that the layer having the lower degree of robustness is located below the other layer having the higher degree of robustness. Specific examples of materials and method used to make multi-junction photovoltaic cells are also described.
摘要:
A multi-junction photovoltaic device is disclosed. In certain examples, the device includes an upper photovoltaic cell comprising a first plurality of layers of films, including a first active layer of a chalcogenide having a first lattice constant and first energy band gap, and a lower photovoltaic cell disposed below the upper photovoltaic cell and adapted to receive photon radiation passing through the upper photovoltaic cell, and comprising a second plurality of layers of films, including an active second layer of a IB-IIIA-chalcogenide having a second lattice constant and a second energy band gap. The first lattice constant differs from the second lattice constant by no more than about 10%. The first energy band gap can be greater than the second energy band gap by at least about 0.5 eV, or 0.6 eV, or 0.7 eV.
摘要:
The present invention relates to a photovoltaic device, in particular thin layer photovoltaic device, comprising a first transparent electrode, a first semiconductor layer comprising particles of a first semiconductor material, second semiconductor layer comprising particles of a second semiconductor material, and a second electrode, wherein the first and the second semiconductor material are different materials, and wherein the particles of the first and the second semiconductor material have an average grain size in the range of 0.1-20 µm preferably 1-10 µm, as well as to photovoltaic panels comprising two or more of such photovoltaic devices.
摘要:
Eine Dünnschichtsolarzelle (10) umfasst ein Substrat (1) aus Metall oder Glas, eine photovoltaische Schichtstruktur (4) des Typs Kupfer-Indium-Sulfid (CIS) oder Kupfer-Indium-Gallium-Selenid (CIGSe) und eine Verkapselungsschicht (5) auf Basis von Polysilazan.
摘要:
The invention relates to a photovoltaic module having at least one solar cell comprising an energy-producing layer, a contact layer being formed on the reverse radiation side of said layer and a second contact layer being formed on the front radiation side of said layer, wherein a light-amplifying material is formed beneath a side of the first contact layer facing away from the first contact layer.
摘要:
A solar cell is provided with a down-converter that converts incoming high energy photons into two or lower energy photons before conversion to electric current, in order to provide for more efficient conversion. The down-converter comprises a combination of Neodymium and Ytterbium ions in a sulfide. The sulfide may ne Indium Sulfide, doped with the Neodymium and Ytterbium. The indium sulfide may be combined with a CIS (Copper Indium Sulfide layer to form active layers of a solar cell, or the sulfide with Neodymium and Ytterbium may be used as a separate filter before conversion to electric current. A solar cell may be provided with an up converter realized by means of quantum dots in an absorber matrix.