FABRICATION METHOD FOR SEMICONDUCTOR DEVICE AND FILM FORMATION APPARATUS FOR SAID METHOD
    54.
    发明申请
    FABRICATION METHOD FOR SEMICONDUCTOR DEVICE AND FILM FORMATION APPARATUS FOR SAID METHOD 审中-公开
    用于半导体器件的制造方法和用于求解方法的膜形成装置

    公开(公告)号:WO1989008328A1

    公开(公告)日:1989-09-08

    申请号:PCT/JP1988001147

    申请日:1988-11-14

    Abstract: A fabrication method for the semiconductor device of the present invention is characterized by including the step in which patterning of an amorphous silicon type semiconductor layer and/or a back electrode brings a wire mask into substantially close contact with a film formation surface to form an amorphous silicon type semiconductor layer and/or the back electrode and the step in which the thin film extending to a wire portion is removed, whenever necessary. A film formation apparatus of the present invention comprises a main body for housing the substrate, a means for fixing the substrate to the main body and locating the substrate and a plurality of thin wires disposed on the film formation surface side of the substrate and to be brought into substantially close contact with the film formation surface of the substrate. In accordance with the fabrication method for the semiconductor device and the film formation apparatus for said method of the present invention, complete patterning can be made even when an extremely thin film is formed around the wire portion and the production yield can be improved. It is not necessary to make strict adjustment of the wires and complicated steps in ordinary etching processes such as application of a resist, curing of the resist, removal of the resist, and the like, become unnecessary.

    Abstract translation: 本发明的半导体器件的制造方法的特征在于包括以下步骤:非晶硅型半导体层和/或背电极的图案化使线掩模与成膜表面基本上紧密接触以形成非晶形 硅类半导体层和/或背电极,并且必要时,除去延伸到导线部分的薄膜的步骤。 本发明的成膜装置包括:用于容纳基板的主体,用于将基板固定到主体并定位基板的装置以及设置在基板的成膜表面侧上的多根细线,并且 与基板的成膜表面基本上紧密接触。 根据本发明的半导体装置和成膜装置的制造方法,即使在线部周围形成极薄的膜,也能够提高生产率,可以进行完全的图案化。 不需要严格地调整电线,并且不需要诸如施加抗蚀剂,抗蚀剂固化,抗蚀剂除去等普通蚀刻工艺中的复杂步骤。

    POLYETHYLENE TEREPHTHALATE RESIN COMPOSITION
    58.
    发明申请
    POLYETHYLENE TEREPHTHALATE RESIN COMPOSITION 审中-公开
    聚乙烯三癸酸酯树脂组合物

    公开(公告)号:WO1996026245A1

    公开(公告)日:1996-08-29

    申请号:PCT/JP1996000382

    申请日:1996-02-21

    Abstract: A polyethylene terephthalate resin composition comprising (A) 100 pts. by wt. of a polyethylene terephthalate resin prepared by polymerization using a germanium catalyst and containing at least 80 % of ethylene terephthalate repeating units and (B) 0.05 to 30 pts. by wt. of at least one compound selected from the group consisting of epoxy compounds each having at least two epoxy groups in the molecule and not containing any ester linkage therein and carbodiimide compounds; and another resin composition obtained by adding (C) a fibrous reinforcement, (D) a block copolymer and/or (E) an inorganic nucleating agent to the above resin composition. These resin compositions are excellent in the resistance to moist heat, flow properties, and mechanical strengths. In particular, the addition of the components (D) and (E) enables high-cycle molding even at low mold temperature and makes it possible to provide molded articles having excellent surface properties.

    Abstract translation: 一种聚对苯二甲酸乙二醇酯树脂组合物,其包含(A)100重量份。 以重量计 的聚对苯二甲酸乙二醇酯树脂,其通过使用锗催化剂聚合并含有至少80%的对苯二甲酸乙二醇酯重复单元制备,(B)为0.05至30个点。 以重量计 的至少一种选自分子中具有至少两个环氧基并且不含有任何酯键的环氧化合物和碳二亚胺化合物的化合物; 和(C)纤维增强剂,(D)嵌段共聚物和/或(E)无机成核剂)添加到上述树脂组合物中而获得的另一种树脂组合物。 这些树脂组合物的耐湿热性,流动性和机械强度优异。 特别是,组分(D)和(E)的添加使得即使在低的模具温度也能进行高周期成型,并且可以提供具有优异表面性能的模塑制品。

    PROCESS FOR PRODUCING CARBOXYLIC ACID DERIVATIVE
    59.
    发明申请
    PROCESS FOR PRODUCING CARBOXYLIC ACID DERIVATIVE 审中-公开
    生产羧酸衍生物的方法

    公开(公告)号:WO1996020188A1

    公开(公告)日:1996-07-04

    申请号:PCT/JP1995002673

    申请日:1995-12-25

    CPC classification number: C07D333/34

    Abstract: A process for producing 3-(2-thienylthio)butyric acid comprising converting a compound represented by general formula (III), whereby the formation of by-product 3-(3-thienylthio)butyric acid as a positional isomer of the target compound can be reduced to 0.1 % by mole or below, wherein R represents a linear or branched C1-C4 alkyl. The obtained 3-(2-thienylthio)butyric acid is useful as an intermediate of medicinal compounds.

    Abstract translation: 一种生产3-(2-噻吩硫基)丁酸衍生物的方法,该方法包括将通式(III)的化合物转化为使副产物3-(3-噻吩硫基) )作为目标化合物的位置异构体的丁酸可以降低至等于或低于0.1摩尔%的值。 在所述式(III)中,R表示直链或支链C 1-4烷基。 这样得到的3-(2-噻吩硫基)丁酸可以用作医药化合物的中间体。

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