公开(公告)号：WO0068710A3

公开(公告)日：2001-04-12

申请号：PCT/IB0000701

申请日：2000-05-10

Applicant: LIPPENS FRANCOIS ,  CHARTIER YVES

Inventor： LIPPENS FRANCOIS ,  CHARTIER YVES

IPC: G01T1/02 ,  G01T1/24 ,  G01T1/29 ,  H01L27/146 ,  H01L31/08 ,  H01L31/09 ,  H01L31/115 ,  H05G1/64

CPC classification number: G01T1/026 ,  G01T1/242 ,  G01T1/246 ,  G01T1/2928 ,  H01L27/14647 ,  H01L27/14658 ,  H01L27/14676 ,  H01L31/085 ,  H01L31/095 ,  H01L31/115

Abstract: An X-ray detection system includes at least two electrodes constructed and cooperatively arranged at a photoconductive material to provide an electric field inside the material in a first direction, an X-ray shield and an X-ray window, a read-out circuitry, and a processing circuitry. The X-ray shield and the X-ray window are constructed and arranged to direct X-rays into the photoconductive material in a selected X-ray direction substantially different from the first direction, wherein the directed X-rays are absorbed at a location inside the photoconductive material at a depth corresponding to their energy. The read-out circuitry is constructed and arranged to receive electric signals corresponding to the absorption location inside the photoconductive material. The processing circuitry is constructed and arranged to determine the energy of the absorbed X-rays based on the electric signals.

Abstract translation: X射线检测系统包括至少两个电极，其被构造并协同地布置在感光材料上以在第一方向上提供材料内的电场，X射线屏蔽和X射线窗口，读出电路， 和处理电路。 X射线屏蔽和X射线窗被构造和布置成在与第一方向基本上不同的所选X射线方向上将X射线引导到光电导材料中，其中定向X射线在内部的位置被吸收 光导材料的深度对应于它们的能量。 读出电路被构造和布置成接收与光电导材料内部的吸收位置对应的电信号。 处理电路被构造和布置成基于电信号确定吸收的X射线的能量。

公开(公告)号：WO01011696A1

公开(公告)日：2001-02-15

申请号：PCT/US2000/021312

申请日：2000-08-04

IPC: G01J5/10 ,  H01L27/146 ,  H01L31/09 ,  G01J5/00 ,  H01L31/101

CPC classification number: H01L27/14652 ,  G01J5/10 ,  Y10S977/72 ,  Y10S977/759 ,  Y10S977/815

Abstract: A three-color QWIP focal plane array is based on a GaAs/AlGaAs material system. Three-color QWIPs (300) enable target recognition and discriminating systems to precisely obtain the temperature of two objects in the presence of a third unknown parameter. The QWIPs (300) are designed to reduce the normal reflection over a significant wavelength range. One aspect of the present invention involves two photon absorptions per transition in a double quantum well structure which is different from typical QWIP structures. This design is expected to significantly reduce the dark current as a result of higher thermionic barriers and therefore allow the devices to operate at elevated temperatures. The device is expected to be fabricated using a GaAs/AlxGa1-xAs material system on a semi-insulating GaAs substrate (340) by Molecular Beam Epitacy (MBE).

Abstract translation: 三色QWIP焦平面阵列基于GaAs / AlGaAs材料系统。 三色QWIP（300）使得目标识别和识别系统在存在第三个未知参数的情况下精确获得两个物体的温度。 QWIP（300）设计用于减少有效波长范围内的正常反射。 本发明的一个方面涉及双重量子阱结构中每个跃迁的两个光子吸收，其不同于典型的QWIP结构。 由于较高的热离子屏障，预期这种设计将显着降低暗电流，因此允许器件在升高的温度下工作。 该器件预期将通过分子束表现（MBE）在半绝缘GaAs衬底（340）上使用GaAs / Al x Ga 1-x As材料体系制造。

公开(公告)号：WO01006572A1

公开(公告)日：2001-01-25

申请号：PCT/JP2000/004540

申请日：2000-07-07

IPC: H01L29/06 ,  G01J1/02 ,  G01J5/10 ,  G01J5/20 ,  G01R29/08 ,  H01L29/66 ,  H01L29/80 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/101 ,  H01Q9/28 ,  H01L31/09 ,  G01J1/44

CPC classification number: H01Q9/28 ,  B82Y10/00 ,  H01L31/02325 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101

Abstract: The invention provides a millimeter wave and far-infrared detector of extreme sensitivity and shorter response time. The detector comprises an input (1) for introducing incident millimeter wave or far-infrared radiation (2) to a detector antenna; a semiconductor substrate (4) on which is formed a single-electron transistor (14) for controlling the current penetrating a semiconductor quantum dot (12); and bow tie antennas (6, 6a, 6b, 6c) for concentrating millimeter wave or far-infrared radiation (2) onto a semiconductor quantum dot that define a submicron space in the single-electron transistor (14). The quantum dot forming a two-dimensional electron system efficiently absorbs the concentrated radiation and maintains the resulting excitation state for more than 10 nanoseconds so that more than 1,000,000 electrons can be transported for a single photon absorbed.

Abstract translation: 本发明提供了一种具有极高灵敏度和较短响应时间的毫米波和远红外探测器。 检测器包括用于将入射的毫米波或远红外辐射（2）引入检测器天线的输入端（1） 半导体衬底（4），其上形成有用于控制穿过半导体量子点（12）的电流的单电子晶体管（14）; 和用于将毫米波或远红外辐射（2）集中到在单电子晶体管（14）中限定亚微米空间的半导体量子点上的弓形天线（6,6a，6b，6c）。 形成二维电子系统的量子点有效吸收浓缩辐射，并将所得到的激发态保持超过10纳秒，从而可以传输超过1,000,000个电子，以吸收单个光子。

公开(公告)号：WO00065825A1

公开(公告)日：2000-11-02

申请号：PCT/IB2000/000581

申请日：2000-04-26

IPC: A61B6/00 ,  A61B6/14 ,  G01N23/04 ,  G01T1/00 ,  G01T1/24 ,  H01L31/09 ,  H04N5/32 ,  H04N5/335

CPC classification number: G01T1/241 ,  A61B6/14 ,  G01N23/04 ,  G01T1/247 ,  H04N5/32

Abstract: A semiconductor radiation imaging assembly comprises a semiconductor imaging device including at least one image element detector. The imaging device is arranged to receive a bias for forming the at least one image element detector. The assembly also includes bias monitoring means for monitoring the bias for determining radiation incident on the image element detector. Preferably, the imaging device comprises a plurality of image element detectors the bias for at least some of which is monitored for determining incident radiation. More preferably, the bias for all the detector elements is monitored.

Abstract translation: 半导体辐射成像组件包括包括至少一个图像元素检测器的半导体成像装置。 成像装置被布置成接收用于形成至少一个图像元素检测器的偏压。 该组件还包括用于监测用于确定入射在图像元件检测器上的辐射的偏压的偏置监视装置。 优选地，成像装置包括多个图像元素检测器，其中至少一些的偏压被监测用于确定入射辐射。 更优选地，监测所有检测器元件的偏置。

公开(公告)号：WO00026922A1

公开(公告)日：2000-05-11

申请号：PCT/US1999/024697

申请日：1999-10-21

IPC: G21K1/02 ,  A61B6/06 ,  G01T1/00 ,  G01T1/24 ,  G01T7/00 ,  G06T1/00 ,  G21K1/10 ,  H01L27/14 ,  H01L31/09 ,  H04N5/321 ,  G21K1/00

CPC classification number: G21K1/10

Abstract: A shielding grid (44) constructed of a radiation absorbing material (46, 48) for use with an array of discreet, non-contiguous radiation sensors to protect such sensors from scattered radiation. The sensors each have a radiation sensitive area (11) with a width (Ws) and a length (W1). In designing the grid a prototile having a prototile width and a prototile length is developed. The prototile width is equal to the radiation sensitive area width divided by an integer, and the prototile length is also equal to the radiation sensitive area length divided by an integer. The prototile contains a motif contained solely within the prototile that forms a pattern when a plurality of prototiles sufficient to cover the array of discreet detector are arrayed contiguously. The grid is constructed with the radiation absorbing material in this pattern.

Abstract translation: 由辐射吸收材料（46,48）构成的屏蔽网格（44,48），用于与排列不连续的辐射传感器阵列一起使用以保护这种传感器免受散射辐射。 传感器各具有宽度（Ws）和长度（W1）的辐射敏感区域（11）。 在设计网格时，开发了具有原始宽度和原始长度的原型。 原型宽度等于辐射敏感区域宽度除以整数，原型长度也等于辐射敏感区域长度除以整数。 原子游离体包含仅在原始细胞内包含的基序，其形成图案，当足以覆盖离散检测器阵列的多个原生质体相邻排列时。 在该图案中用该辐射吸收材料构成栅格。

公开(公告)号：WO99033117A1

公开(公告)日：1999-07-01

申请号：PCT/EP1998/007526

申请日：1998-11-19

IPC: G01T1/24 ,  H01L27/14 ,  H01L31/09 ,  H04N5/225 ,  H04N5/32 ,  H04N5/335 ,  H01L27/146

CPC classification number: G01T1/243

Abstract: Radiation imaging apparatus includes a support structure for a number of modules which each in their turn support a number of imaging device tiles. An imaging device on each tile provides an array of radiation detector cells. With the modular construction, the apparatus can provide a large imaging array from a large number of individual tiles. The support structure may be located in or form part of an imaging cassette. The modules provide tile mounting locations in one or more rows for the imaging device tiles, whereby the tiles may be accurately mounted with respect the module and to each other prior to being mounted on the support structure. The tiles are mounted on the modules and the modules are mounted within the cassette in a removable manner to facilitate the replacement of faulty tiles when required and/or the replacement of tiles having different resolutions and/or specifications for different imaging applications. Various arrangements for electronically clustering tiles are provided.

Abstract translation: 辐射成像装置包括用于多个模块的支撑结构，每个模块各自支撑许多成像装置瓦片。 每个瓦片上的成像装置提供辐射检测器单元的阵列。 通过模块化结构，该装置可以从大量单独的瓦片提供大的成像阵列。 支撑结构可以位于成像盒中或形成成像盒的一部分。 这些模块为成像装置瓦片提供一行或多行中的瓦片安装位置，由此瓦片可以在安装在支撑结构之前相对于模块和彼此被精确地安装。 瓦片安装在模块上，并且模块以可移除的方式安装在盒内，以便在需要时更换故障瓦片和/或更换不同成像应用具有不同分辨率和/或规格的瓦片。 提供了电子聚集瓦片的各种布置。

公开(公告)号：WO9602937A3

公开(公告)日：1996-03-07

申请号：PCT/IB9500551

申请日：1995-07-11

Applicant: PHILIPS ELECTRONICS NV ,  PHILIPS NORDEN AB ,  PHILIPS ELECTRONICS UK LTD

Inventor： POWELL MARTIN JOHN ,  HUGHES JOHN RICHARD

IPC: G01T1/20 ,  H01L27/146 ,  H01L31/09 ,  H04N5/32 ,  H01L

CPC classification number: H01L27/14672 ,  H01L27/14665

Abstract: An image detector (1, 1a) has an array (2) of sensors (3) formed from layers of material provided on a substrate (4) and separated from a biasing electrode (5) by a radiation conversion layer (6) in which charge carriers are generated in response to incident radiation. Each sensor has a collecting electrode (7a, 7b) for colecting charge carriers generated in the radiation conversion layer (6), a capacitor (c) for storing charge and a switching element (8) having at least first and second electrodes (9 and 10) with one (10) of the first and second electrodes being coupled to the collecting electrode (7a, 7b) for enabling charge carriers stored at the sensor (3) to be read out. Each collecting electrode (7a, 7b) extends laterally beyond the associated switching element (8) on an insulating layer (12a, 12b) provided over the switching elements to form the associated capacitor (c) with an underlying reference electrode (12a, 12b) separated from the collecting electrode (7a, 7b) by the insulating layer (11a, 11b).

公开(公告)号：WO9206501A3

公开(公告)日：1992-06-11

申请号：PCT/US9107146

申请日：1991-09-27

Applicant: GEN ELECTRIC

Inventor： KINGSLEY JACK DEAN ,  KWASNICK ROBERT FORREST ,  WEI CHING-YEU ,  SAIA RICHARD JOSEPH

IPC: H01L27/14 ,  G01T1/20 ,  H01L27/146 ,  H01L31/09 ,  G01T1/24 ,  H04N5/32

CPC classification number: H01L27/14663

Abstract: A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elements is disposed in fixed relation to the photodetector array so that the individual scintillator elements are disposed on scintillator support islands. A barrier layer is disposed between the support islands and the photodetector array to minimize chemical interactions between the material forming the support island and the underlying photodetector array during the fabrication process. After the support islands have been patterned, the scintillator elements are grown by selectively depositing scintillator material on the support islands.

Abstract translation: 辐射成像器包括具有形貌图案化表面特征的光电探测器阵列，其包括设置在光电探测器阵列中的一个或多个光电探测器的有源部分上方的支撑岛。 具有单独的柱状闪烁体元件的结构化闪烁体阵列以与光电探测器阵列固定的关系设置，使得单个闪烁体元件设置在闪烁体支撑岛上。 在支撑岛和光电检测器阵列之间设置阻挡层，以使在制造过程期间形成支撑岛和下面的光电检测器阵列的材料之间的化学相互作用最小化。 在支撑岛被图案化后，通过选择性地将闪烁体材料沉积在支撑岛上来生长闪烁体元件。

公开(公告)号：WO2022121737A1

公开(公告)日：2022-06-16

申请号：PCT/CN2021/134561

申请日：2021-11-30

Applicant: 上海集成电路研发中心有限公司 SHANGHAI IC R&D CENTER CO., LTD. [CN]/[CN]

Inventor： 康晓旭 KANG, Xiaoxu ,  陈寿面 CHEN, Shoumian ,  钟晓兰 ZHONG, Xiaolan

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/09

Abstract: 本发明属于半导体的技术领域，公开了一种新型多层红外探测器，包括设置在带读取电路的衬底上的多层阵列排布的像元集合，上下相邻两层的像元集合的对应的高层像元与低层像元之间相互错开排布，所述高层像元与所述低层像元均包括含微桥桥面、梁结构、支撑及电连接孔在内的微桥谐振腔结构，且高层像元的微桥桥面的投影面与低层像元的梁结构、支撑及电连接孔、左右相邻低层像元之间的间隙的投影面重叠。本发明的多层红外探测器借助错开排布，高层像元的微桥桥面覆盖低层像元的微桥的梁结构、支撑及电连接孔、左右相邻低层像元之间的间隙，增加红外线的吸收面积，提高红外吸收效率，并在成本可控的前提下提升产品性能。

公开(公告)号：WO2021118360A1

公开(公告)日：2021-06-17

申请号：PCT/NL2020/050785

申请日：2020-12-14

Applicant: UNIVERSITEIT TWENTE

Inventor： CHEN, Tao ,  VAN DER WIEL, Wilfred Gerard

IPC: H01L31/0224 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/09

Abstract: A photodetector is provided for sensing radiation in middle and long wave infrared domain. The sensor has a sensor layer of a first material having a first conductivity type and a first permittivity in which the shortest distance of any point in the sensor layer to an adjacent layer having a second conductivity type and a second permittivity lower than the first permittivity is 20 nanometres or less. Conductivity type may be semiconductor n-type or p-type or insulator. If, for example, a silicon sensor layer is sandwiched between two silicon oxide layers, the sensor layer of preferably p-type semiconductor has a maximum thickness of 40 nanometres. If a p-type layer of a first material is sandwiched between a dielectric layer with the second permittivity and an n-type layer of the first material, the maximum thickness is 20 nanometres. Spaced apart, two contacts are provided in contact with the sensor layer.