公开(公告)号：WO2019050714A1

公开(公告)日：2019-03-14

申请号：PCT/US2018/048342

申请日：2018-08-28

Applicant: APPLIED MATERIALS, INC.

Inventor： GOPALRAJA, Praburam ,  ROY, Susmit Singha ,  MALLICK, Abhijit Basu ,  GANDIKOTA, Srinivas

IPC: H01L27/06 ,  H01L27/07 ,  H01L21/768 ,  H01L21/283 ,  H01L21/321 ,  H01L21/02

Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.

公开(公告)号：WO2019032457A1

公开(公告)日：2019-02-14

申请号：PCT/US2018/045386

申请日：2018-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： BHUYAN, Bhaskar Jyoti ,  SALY, Mark ,  SUN, Zhelin ,  LI, Ning ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  LIU, Yijun ,  YANG, Lin

IPC: H01L21/02 ,  H01L21/324

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：WO2019014446A1

公开(公告)日：2019-01-17

申请号：PCT/US2018/041823

申请日：2018-07-12

Applicant: APPLIED MATERIALS, INC.

Inventor： WU, Kai ,  YU, Sang Ho ,  BANTHIA, Vikash

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/324 ,  C23C16/455 ,  H01L21/67

Abstract: Methods of depositing low resistivity tungsten nucleation layers using alkyl borane reducing agents are described. Alkyl borane reducing agents utilized include compounds with the general formula BR3, where R is a C1-C6 alkyl group. Apparatus for performing atomic layer deposition of tungsten nucleation layers using alkyl borane reducing agents are also described.

公开(公告)号：WO2019010279A3

公开(公告)日：2019-01-10

申请号：PCT/US2018/040879

申请日：2018-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： BASU, Atashi ,  NEMANI, Srinivas D. ,  YIEH, Ellie Y.

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/56 ,  C07F7/10

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：WO2018226817A1

公开(公告)日：2018-12-13

申请号：PCT/US2018/036241

申请日：2018-06-06

Applicant: APPLIED MATERIALS, INC.

Inventor： CHENG, Rui ,  WANG, Fei ,  MALLICK, Abhijit Basu ,  VISSER, Robert Jan

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：WO2018222444A1

公开(公告)日：2018-12-06

申请号：PCT/US2018/033894

申请日：2018-05-22

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAKRABORTY, Tapash ,  VISSER, Robert Jan ,  GORADIA, Prerna

IPC: C23C16/455 ,  C07F7/10 ,  C07D317/36 ,  C07D319/06 ,  C07D307/89

CPC classification number: H01L21/02118 ,  B05D1/36 ,  B05D1/60 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/3105

Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

公开(公告)号：WO2018217753A1

公开(公告)日：2018-11-29

申请号：PCT/US2018/033891

申请日：2018-05-22

Applicant: APPLIED MATERIALS, INC.

Inventor： ANTHIS, Jeffrey W. ,  THOMPSON, David ,  SCHMIEGE, Benjamin

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/3065

Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.

公开(公告)号：WO2018187781A2

公开(公告)日：2018-10-11

申请号：PCT/US2018/026605

申请日：2018-04-06

Applicant: APPLIED MATERIALS, INC.

Inventor： ANTHIS, Jeffrey W. ,  BASU, Atashi ,  THOMPSON, David ,  KAZEM, Nasrin

IPC: C23C16/18 ,  C07F15/06 ,  C23C16/455

CPC classification number: C07F15/065 ,  C23C16/18 ,  C23C16/45553

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R 1 and R 4 are selected from the group consisting of C4-C10 alkyl groups; and R 2 and R 3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyi, or aryl groups and the difference in the number of carbons in R 2 and R 3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：WO2018187547A2

公开(公告)日：2018-10-11

申请号：PCT/US2018/026220

申请日：2018-04-05

Applicant: APPLIED MATERIALS, INC.

Inventor： KNISLEY, Thomas

IPC: C23C16/22 ,  C23C16/455 ,  C07F15/00

CPC classification number: C23C16/45553 ,  C07F15/004 ,  C23C16/18 ,  C23C16/45527

Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: (I), (A), (B) where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：WO2018132568A1

公开(公告)日：2018-07-19

申请号：PCT/US2018/013320

申请日：2018-01-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YAN, Wenbo ,  TRINH, Cong ,  LI, Ning ,  BALSEANU, Mihaela ,  XIA, Li-Qun ,  MALDONADO-GARCIA, Maribel

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/324

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250 °C to form a silicon nitride film with a low etch rate without damaging the metal surface.