Abstract:
A light emitting device includes an electroluminescent material and semiconductor nanocrystals. The semiconductor nanocrystals accept energy from the electroluminescent material and emit light.
Abstract:
The present invention relates to a method of making a flexible mold with a hygroscopic support, the flexible mold, and methods of using the mold to make microstructures.
Abstract:
There is disclosed an improved field emission backplate (5a; 5b; 5c; 5d; 5e) used in a field emission device (100) such as a display device, and to an associated method of manufacture. Known field emission devices suffer from a number of disadvantages such as: ease of manufacture, predictability of manufacture, quality of manufacture, predictability of technical characteristics. Accordingly the invention provides a field emission backplate (5a; 5b; 5c; 5d; 5e) comprising a plurality of conductive or conducting particulates or particles (20a; 20b; 20c;20d;20e), wherein the conducting particulates are provided within the backplate. The field emission backplate (5a; 5b; 5c; 5d; 5e) comprises a layer (15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material, e.g. Si:H. Each conducting particulate ( 20a; 20b; 20c; 20d; 20e) comprises a point or locality, e.g. of crytallisation, e.g. a "crystallite", within the layer ( 15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material.
Abstract:
A front plate (10) on which display electrodes (12, 13), a dielectric layer and a protective layer are formed, and a back plate (20) on which an address electrode (24), a partition wall (23) and a phosphor (28) are formed, are respectively composed of a heat-resistant resin substrate. An ultraviolet absorbing layer or an ultraviolet reflecting layer is formed on the front plate and the back plate for preventing a discharge of an impurity gas from the heat-resistant resin substrate due to irradiation of ultraviolet light generated with the plasma discharges. The protective layer formed on the front plate may have an ultraviolet absorbing function or an ultraviolet reflecting function.
Abstract:
An MgO film having a high filling rate is provided. A vapor source (23) is arranged in a vacuum chamber (12), and vapor of MgO is generated by irradiating the vapor source with an electron beam (28), while introducing oxygen gas and gaseous water. At this time, the introducing quantity of the water is specified so that the number of water molecules remaining in the vacuum chamber is 2.99x10 -1 times the number of the water molecules introduced into the vacuum chamber or more. Thus, the MgO film having a high peak strength of a (110) plane orientation is obtained. Since the MgO film wherein a (110) plane is preferentially oriented has a high filling rate, and a gas discharge speed is low, the film is excellent in anti-sputtering characteristics.