NUCLEATION LAYERS FOR GROWTH OF GALLIUM-AND-NITROGEN-CONTAINING REGIONS

    公开(公告)号:WO2022205462A1

    公开(公告)日:2022-10-06

    申请号:PCT/CN2021/085425

    申请日:2021-04-02

    Abstract: Exemplary processing methods include forming a nucleation layer on a substrate. The nucleation layer may be formed by physical vapor deposition (PVD), and the physical vapor deposition may be characterized by a deposition temperature of greater than or about 700℃. The methods may further include forming a patterned mask layer on the nucleation layer. The patterned mask layer may include openings that expose portions of the nucleation layer. Gallium-and-nitrogen-containing regions may be formed on the exposed portions of the nucleation layer. In additional embodiments, the nucleation layer may include a first and second portions separated by an interlayer that stops the propagation of at least some dislocations in the nucleation layer.

    OXIDATION TREATMENT FOR POSITIVE TONE PHOTORESIST FILMS

    公开(公告)号:WO2022203859A1

    公开(公告)日:2022-09-29

    申请号:PCT/US2022/019361

    申请日:2022-03-08

    Abstract: Embodiments disclosed herein include methods of depositing a positive tone photoresist using dry deposition and oxidation treatment processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of a positive tone photoresist layer on a surface of the substrate. The positive tone photoresist layer is a metal-oxo containing material. The method further includes performing a post anneal process of the metal-oxo containing material in an oxygen-containing environment.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:WO2022203767A1

    公开(公告)日:2022-09-29

    申请号:PCT/US2022/015222

    申请日:2022-02-04

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

    AIRGAP STRUCTURES FOR IMPROVED EYEPIECE EFFICIENCY

    公开(公告)号:WO2022197712A1

    公开(公告)日:2022-09-22

    申请号:PCT/US2022/020399

    申请日:2022-03-15

    Abstract: Embodiments of the present disclosure generally relate to encapsulated optical devices and methods of forming encapsulated optical devices. The optical devices include a plurality of optical device structures disposed on a substrate. An encapsulation coating is disposed over the plurality of optical device structures. The encapsulation coating includes a ratio of encapsulation material to solvent. A plurality of gaps are formed in the optical device. The plurality of gaps are formed when the solvent is evaporated from the encapsulation coating. The material composition of the encapsulation coating, the width and device angle of the plurality of optical device structures, as well as process parameters of the spin on coating process, the curing process, the baking process, the drying process, and the developing process will affect the formation of the plurality of gaps and the depth at which the plurality of gaps are formed.

    REDUCED LOCALIZED FORCE IN ELECTROSTATIC CHUCKING

    公开(公告)号:WO2022197518A1

    公开(公告)日:2022-09-22

    申请号:PCT/US2022/019702

    申请日:2022-03-10

    Abstract: Semiconductor substrate support assemblies may include an electrostatic chuck body having a substrate support surface. The electrostatic chuck body may define a plurality of protrusions extending from the substrate support surface. The assemblies may include an electrode embedded within the electrostatic chuck body. The electrode may define apertures through the electrode in line with the plurality of protrusions extending from the substrate support surface.

    PRINT PROCESS FOR COLOR CONVERSION LAYER
    89.
    发明申请

    公开(公告)号:WO2022192588A1

    公开(公告)日:2022-09-15

    申请号:PCT/US2022/019828

    申请日:2022-03-10

    Abstract: A method of fabricating a multi-color display includes dispensing a first photo-curable fluid through apertures in a first mask into a first plurality of wells in a display. A first plurality of light emitting diodes are activated to illuminate and cure the first photo-curable fluid to form a first color conversion layer over each of the first plurality of light emitting diodes, and an uncured remainder of the first photo-curable fluid is removed. A second photo-curable fluid is dispensed through apertures in a second mask into a second plurality of wells in the display. A second plurality of light emitting diodes are activated to illuminate and cure the second photo-curable fluid to form a second color conversion layer over each of the second plurality of light emitting diodes. An uncured remainder of the second photo-curable fluid is removed.

    COIL FOR IMPROVED PROCESS CHAMBER DEPOSITION AND ETCH UNIFORMITY

    公开(公告)号:WO2022192296A1

    公开(公告)日:2022-09-15

    申请号:PCT/US2022/019400

    申请日:2022-03-08

    Abstract: Embodiments of coils for use in process chambers are provided herein. In some embodiments, a coil for use in a process chamber includes: a coil body having a first end portion and an opposing second end portion coupled to the first end portion via a central portion, the coil body having an annular shape with the first end portion and the second end portion disposed adjacent to each other and spaced apart by a gap forming a discontinuity in the annular shape, wherein at least one of the first end portion and the second end portion have a height that is greater than a height of the central portion; and a plurality of hubs coupled to an outer sidewall of the coil body and configured to facilitate coupling the coil to the process chamber, wherein a hub of the plurality of hubs is coupled to each of the first end portion and the second end portion and configured to couple the coil to a power source.

Patent Agency Ranking