SEMICONDUCTOR LASER DEVICE
    81.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开
    半导体激光器件

    公开(公告)号:WO02003516A1

    公开(公告)日:2002-01-10

    申请号:PCT/JP2000/004457

    申请日:2000-07-05

    Abstract: A stable, high-speed-operation, high-performance, high-reliability single-wavelength semiconductor laser device; which comprises, between an upper clad layer and a lower clad layer, an active area, a front light reflection area located in front of the active area, a rear light reflection area located behind the active area, and a phase control area located close to the active area, the front light reflection area and the rear light reflection area respectively being provided with alternating diffraction lattice units and non-diffraction units; and which oscillates at a wavelength corresponding to a value of current running through the diffraction lattice units, wherein current block layers for preventing the flow of current into the non-diffraction units are formed on the non-diffraction units of at least one of the front light reflection area and the rear light reflection area.

    Abstract translation: 稳定,高速,高性能,高可靠性的单波长半导体激光器件; 其包括在上包层和下包层之间的有源区域,位于有源区域前面的前光反射区域,位于有源区域后面的后光反射区域和位于有源区域附近的相位控制区域 所述有源区域,所述前光反射区域和所述后反光区域分别设置有交替的衍射格子单元和非衍射单元; 并且其以对应于流过所述衍射晶格单元的电流的值的波长振荡,其中用于防止电流流入非衍射单元的电流阻挡层形成在所述前衍射单元中的至少一个的非衍射单元上 光反射区域和后光反射区域。

    A METHOD OF WAVELENGTH LOCKING AND MODE MONITORING A TUNEABLE LASER
    85.
    发明申请
    A METHOD OF WAVELENGTH LOCKING AND MODE MONITORING A TUNEABLE LASER 审中-公开
    波长锁定和模式监测可调激光的方法

    公开(公告)号:WO00049693A1

    公开(公告)日:2000-08-24

    申请号:PCT/SE2000/000293

    申请日:2000-02-15

    CPC classification number: H01S5/4006 H01S5/06256 H01S5/1209 H01S5/4025

    Abstract: A method of wavelength locking and mode monitoring a tuneable laser (15) that includes two or more tuneable sections in which injected current can be varied, said sections including at least one reflector section and one phase section, wherein the laser (15) has been characterised with respect to suitable laser operation points that have been determined as different current combinations through the different laser sections, and wherein said laser operates in a predetermined, selected operation point. The invention is characterised by detecting the light emitted by the laser with respect to its wavelength with the aid of a wavelength selective filter; controlling the laser in an iterative process in which alternated currents through the reflector section (17) of said laser and, when applicable, its coupler section (19), and the current through the phase section (18) of said laser are adjusted; adjusting the currents through the reflector section and the coupler section so as to obtain a minimum with respect to the ratio between power rearwards (I3) and power forwards (I2); and adjusting the current through the phase section (18) of the laser so as to hold the wavelength constant, said wavelength being measured against a wavelength reference (32).

    Abstract translation: 一种波长锁定和模式监测方法,其包括可以改变注入电流的两个或更多个可调节部分的可调谐激光器(15),所述部分包括至少一个反射器部分和一个相位部分,其中激光器(15)已经被 其特征在于已经被确定为通过不同激光部分的不同电流组合的合适的激光操作点,并且其中所述激光器在预定的选择的操作点中操作。 本发明的特征在于借助于波长选择滤波器来检测激光器相对于其波长发射的光; 在迭代过程中控制激光器,其中通过所述激光器的反射器部分(17)和可应用的耦合器部分(19)和通过所述激光器的相位部分(18)的电流的交替电流被调节; 调整通过反射器部分和耦合器部分的电流,以便相对于后向功率(I3)和功率前进(I2)之间的比率获得最小值; 以及调整通过激光器的相位部分(18)的电流以保持波长恒定,所述波长是针对波长参考值(32)测量的。

    ANGLED DBR-GRATING LASER/AMPLIFIER WITH ONE OR MORE MODE-HOPPING REGIONS
    87.
    发明申请
    ANGLED DBR-GRATING LASER/AMPLIFIER WITH ONE OR MORE MODE-HOPPING REGIONS 审中-公开
    具有一个或多个模式区域的ANGLED DBR-GRATING激光/放大器

    公开(公告)号:WO2016197137A1

    公开(公告)日:2016-12-08

    申请号:PCT/US2016/036080

    申请日:2016-06-06

    Applicant: NLIGHT, INC.

    Inventor: KANSKAR, Manoj

    Abstract: A semiconductor laser device is disclosed that includes a laser resonator situated to produce a laser beam, with the laser resonator including an angled distributed Bragg reflector (a-DBR) region including first and second ends defining an a-DBR region length corresponding to a Bragg resonance condition with the first end being uncleaved and including a first mode hop region having a first end optically coupled to the a-DBR region first end and extending a first mode hop region length associated with the a-DBR region length to a second end so as to provide a variable longitudinal mode selection for the laser beam.

    Abstract translation: 公开了一种半导体激光器件,其包括位于产生激光束的激光谐振器,激光谐振器包括成角度分布布拉格反射器(a-DBR)区域,该区域包括限定与布拉格对应的a-DBR区域长度的第一端和第二端 共振条件与第一端未被切割并且包括第一模式跳跃区域,其具有光耦合到a-DBR区域第一端的第一端,并且将与a-DBR区域长度相关联的第一模式跳跃区域长度延伸到第二端,因此 为激光束提供可变的纵向模式选择。

    VERNIER EFFECT DBR LASERS INCORPORATING INTEGRATED TUNING ELEMENTS
    88.
    发明申请
    VERNIER EFFECT DBR LASERS INCORPORATING INTEGRATED TUNING ELEMENTS 审中-公开
    VERNIER效应DBR激光器并入集成的调谐元件

    公开(公告)号:WO2016176364A1

    公开(公告)日:2016-11-03

    申请号:PCT/US2016/029619

    申请日:2016-04-27

    Applicant: APPLE INC.

    Abstract: Disclosed is a Vernier effect DBR laser that has uniform laser injection current pumping along the length of the laser. The laser can include one or more tuning elements, separate from the laser injection element, and these tuning elements can be used to control the temperature or modal refractive index of one or more sections of the laser. The refractive indices of each diffraction grating can be directly controlled by temperature changes, electro optic effects, or other means through the one or more tuning elements. With direct control of the temperature and/or refractive indices of the diffraction gratings, the uniformly pumped Vernier effect DBR laser can be capable of a wider tuning range. Additionally, uniform pumping of the laser through a single electrode can reduce or eliminate interfacial reflections caused by, for example, gaps between metal contacts atop the laser ridge, which can minimize multi-mode operation and mode hopping.

    Abstract translation: 公开了一种游标效应DBR激光器,其沿着激光器的长度具有均匀的激光注入电流泵浦。 激光器可以包括与激光注入元件分开的一个或多个调谐元件,并且这些调谐元件可用于控制激光器的一个或多个部分的温度或模态折射率。 每个衍射光栅的折射率可以通过温度变化,电光效应或通过一个或多个调谐元件的其它方式直接控制。 通过直接控制衍射光栅的温度和/或折射率,均匀泵浦的游标效应DBR激光器能够具有更宽的调谐范围。 此外,通过单个电极的激光均匀泵浦可以减少或消除由例如激光脊顶部的金属触点之间的间隙引起的界面反射,这可使多模操作和模式跳跃最小化。

    COMBINED GAIN-SOA CHIP
    89.
    发明申请
    COMBINED GAIN-SOA CHIP 审中-公开
    组合增益SOA芯片

    公开(公告)号:WO2016124699A1

    公开(公告)日:2016-08-11

    申请号:PCT/EP2016/052404

    申请日:2016-02-04

    Inventor: MÖHRLE, Martin

    Abstract: A combined Gain-SOA chip is provided for forming an external cavity laser that is provided with a monolithically integrated power amplifier The Gain-SOA chip comprises a gain section (3), an SOA section (5), and an optical grating (7) arranged between the gain section and the SOA section. A laser cavity may be formed by the optical grating in combination with an external mirror (2) placed adjacent to the gain section. The grating may be formed as DFB or as DBR grating, wherein the grating may be at least partly uncovered an open to the surrounding.

    Abstract translation: 提供了组合的增益SOA芯片,用于形成设置有单片集成功率放大器的外部腔激光器。增益SOA芯片包括增益部分(3),SOA部分(5)和光栅(7) 布置在增益部分和SOA部分之间。 可以通过光栅与与增益部分相邻放置的外部反射镜(2)组合形成激光腔。 光栅可以形成为DFB或DBR光栅,其中光栅可以至少部分地未覆盖到周围开口。

    MONOLITHICALLY INTEGRATED TUNABLE SEMICONDUCTOR LASER
    90.
    发明申请
    MONOLITHICALLY INTEGRATED TUNABLE SEMICONDUCTOR LASER 审中-公开
    单组件可集成的半导体激光器

    公开(公告)号:WO2016038333A1

    公开(公告)日:2016-03-17

    申请号:PCT/GB2015/052497

    申请日:2015-08-28

    Abstract: A monolithically integrated, tunable semiconductor laser with an optical waveguide, comprising a laser chip having epitaxial layers on a substrate and having first and second reflectors bounding an optical gain section and a passive section, wherein at least one of the reflectors is a distributed Bragg reflector section comprising a grating and configured to have a tunable reflection spectrum, wherein the laser is provided with a common earth electrode that is configured to be electrically grounded in use, wherein control electrodes are provided on the optical waveguide in at least the optical gain section and the at least one distributed Bragg reflector section, wherein the passive section is provided with a passive section electrode that electrically contacts the opposite side of the optical waveguide from the substrate, the passive section is configured not to be drivable by an electrical control signal, and no grating is present within the passive section, and wherein the passive section is a grounded passive section in which the passive section electrode is configured to be electrically grounded in use and electrically contacts the passive section, and wherein the passive section electrode and the common earth electrode electrically contact opposite sides of the optical waveguide.

    Abstract translation: 一种具有光波导的单片集成的可调谐半导体激光器,包括在衬底上具有外延层的激光器芯片,并且具有界定光学增益部分和无源部分的第一和第二反射器,其中至少一个反射器是分布式布拉格反射器 包括光栅并被配置为具有可调谐反射光谱的部分,其中所述激光器设置有被配置为在使用中被电接地的公共接地电极,其中控制电极设置在至少光学增益部分的光波导上,以及 所述至少一个分布式布拉格反射器部分,其中所述无源部分设置有与所述光波导的相对侧与所述基板电接触的无源部分电极,所述无源部分被配置为不被电控制信号驱动,以及 在被动部分内不存在光栅,并且其中被动部分 无源部分电极被配置为在使用中被电接地并且与无源部分电接触,并且其中无源部分电极和公共接地电极电接触光波导的相对侧。

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