X線検出器
    82.
    发明申请
    X線検出器 审中-公开
    X射线探测器

    公开(公告)号:WO2012137425A1

    公开(公告)日:2012-10-11

    申请号:PCT/JP2012/001830

    申请日:2012-03-15

    CPC classification number: H01L31/09 G01T1/2018 H01L27/14663

    Abstract:  半導体厚膜7に光を照射する光照射機構として、X線を可視光に変換するシンチレータフィルム11をX線の検出面とは逆側の面に配設して備える。X線検出器1に入射されるX線をシンチレータフィルム11が可視光に変換するので、発光に要する電源や制御部を設ける必要がない。また、使用部品が少なくなり、コスト低減や組み立て作業を軽減することができる。また、シンチレータフィルム11を備えることで消費電力を低減することができる。また、シンチレータフィルム11に到達するX線強度が、分割電極(画素電極)3間で特に強くなり、必要な場所(特に画素電極間)での蛍光強度が強くなるので、感度変動を抑えることができるX線検出器1を実現することができる。

    Abstract translation: 提供将X射线转换为可见光的闪烁体膜(11),作为将照射到半导体厚膜(7)的光照射机构,通过将闪烁体膜设置在X射线的背面的表面上, 射线检测面。 由于闪烁体膜(11)将输入到X射线检测器(1)的X射线转换成可见光,所以不需要设置用于发光的电源和控制单元。 此外,减少了要使用的部件的数量,并且可以降低成本和组装操作。 此外,通过提供闪烁体膜(11)可以降低功耗。 此外,由于到达闪烁体膜(11)的X射线的强度在分割电极(像素电极)(3)之间特别强,荧光强度在必要区域(具体地,像素电极之间)强,所以 可以提供可以抑制灵敏度波动的X射线检测器(1)。

    METHODS AND COMPOSITIONS FOR THE DETECTION OF X-RAY AND GAMMA-RAY RADIATION
    83.
    发明申请
    METHODS AND COMPOSITIONS FOR THE DETECTION OF X-RAY AND GAMMA-RAY RADIATION 审中-公开
    用于检测X射线和伽玛射线辐射的方法和组合

    公开(公告)号:WO2012021519A3

    公开(公告)日:2012-05-03

    申请号:PCT/US2011047088

    申请日:2011-08-09

    CPC classification number: G01T1/24 H01L31/085

    Abstract: Compounds, methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The detection of incident radiation can be accomplished by employing inorganic compounds that include elements with high atomic numbers, that have band gaps of at least about 1.5 eV, and that have an electrical resistivity of at least 106 Ocm as photoelectric materials in a radiation detector. The compounds include inorganic compounds comprising at least one element from periods five or six of the Periodic Table of the Elements.

    Abstract translation: 提供了用于检测入射辐射的化合物,方法和装置,例如入射的X射线或γ射线。 入射辐射的检测可以通过使用包括具有高原子数的元素的无机化合物来实现,其具有至少约1.5eV的带隙,并且具有至少106Ocm的电阻率作为辐射检测器中的光电材料。 所述化合物包括包含元素周期表第五或第六周期的至少一种元素的无机化合物。

    LIGHT MIXER FOR GENERATING TERAHERTZ RADIATION
    84.
    发明申请
    LIGHT MIXER FOR GENERATING TERAHERTZ RADIATION 审中-公开
    用于产生TERAHERTZ辐射的轻型混合器

    公开(公告)号:WO2011030011A3

    公开(公告)日:2012-04-05

    申请号:PCT/FR2010000600

    申请日:2010-09-03

    CPC classification number: H01L31/09

    Abstract: The invention relates to a light mixer for generating terahertz radiation, comprising a photodetector (PHD) coupled to an antenna (AT) for terahertz radiation, characterized in that the photodetector comprises a layer of photoconductive material capable of absorbing optical radiation, said layer having a thickness that is less than the absorption length of said radiation by the photoconductive material and being contained between an at least partially transparent so-called upper electrode and a reflective so-called lower electrode, said lower and upper electrodes comprising a resonant cavity for said optical radiation. The invention further relates to a terahertz radiation source comprising such a light mixer and to two laser radiation sources arranged to stack two laser radiation beams on the upper electrode of the photodetector. The invention also relates to the use of such a light mixer for generating terahertz radiation via light mixing.

    Abstract translation: 本发明涉及一种用于产生太赫兹辐射的光混合器,包括耦合到用于太赫兹辐射的天线(AT)的光电检测器(PHD),其特征在于,所述光电检测器包括能够吸收光辐射的光导材料层,所述层具有 厚度小于光导材料的所述辐射的吸收长度,并且被包含在至少部分透明的所谓上电极和反射所谓的下电极之间,所述下电极和上电极包括用于所述光电 辐射。 本发明还涉及一种太赫兹辐射源,其包括这种光混合器和两个激光辐射源,其布置成在光电检测器的上电极上堆叠两个激光束。 本发明还涉及这种用于通过光混合产生太赫兹辐射的光混合器的用途。

    SILICON PHOTOMULTIPLIER
    87.
    发明申请
    SILICON PHOTOMULTIPLIER 审中-公开
    硅光电倍增管

    公开(公告)号:WO2011122856A3

    公开(公告)日:2011-12-29

    申请号:PCT/KR2011002192

    申请日:2011-03-30

    CPC classification number: H01L27/1446 H01L27/1443

    Abstract: Disclosed is a silicon photomultiplier which comprises: a plurality of micro pixels which include p conductive-type epitaxial layers and PN-bonding layers formed inside the epitaxial layers; trench electrodes which are arranged around the micro pixels; and a substrate, which is opened to allow outside light to be incident, on which the micro pixels and the trench electrodes are settled at the same time. Central shafts of longitudinal sections of said PN-bonding layers are formed to be vertical to the epitaxial layers.

    Abstract translation: 公开了一种硅光电倍增管,其包括:多个微像素,其包括在所述外延层内形成的p个导电型外延层和PN结合层; 围绕微像素布置的沟槽电极; 以及基板,其被打开以允许外部光入射,其上同时沉积有微像素和沟槽电极。 所述PN结合层的纵向部分的中心轴形成为垂直于外延层。

    VACUUM PHOTOSENSOR DEVICE WITH ELECTRON LENSING
    90.
    发明申请
    VACUUM PHOTOSENSOR DEVICE WITH ELECTRON LENSING 审中-公开
    真空感光元件与电子透镜

    公开(公告)号:WO2011143638A2

    公开(公告)日:2011-11-17

    申请号:PCT/US2011/036554

    申请日:2011-05-13

    Inventor: FERENC, Daniel

    CPC classification number: H01J43/06 H01J40/16 H01J43/00

    Abstract: A scalable vacuum photosensor configured to simplify mass production with a housing having an evacuated first side at an ultrahigh vacuum and a second side which does not require high vacuum. The first side of the device is sealed to a base plate, having a central electron readout element, using an oxide-free sealing technique, with the deposited sealing areas serving as high voltage throughputs from the first to second sides. A conductive photocathode layer on the transparent first side converts photons to photoelectrons and concentrates the photoelectrons upon the readout. The first and second sides together form an electrostatic lens for accelerating and focusing photoelectrons upon the readout, preferably having a scintillator which generates secondary light measured by an optical detector in the second side of the housing.

    Abstract translation: 一种可缩放的真空光电传感器,其被配置为通过具有在超高真空下的抽真空的第一侧的壳体和不需要高真空的第二侧来简化批量生产。 该装置的第一侧被密封到具有中央电子读出元件的基板,使用无氧化物密封技术,沉积的密封区域用作从第一至第二侧的高电压通过量。 透明第一面上的导电光电阴极层将光子转换成光电子,并将光电子集中在读出中。 第一和第二侧一起形成用于在读出时加速和聚焦光电子的静电透镜,优选地具有产生由壳体的第二侧中的光学检测器测量的二次光的闪烁体。

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