公开(公告)号：WO2014124271A1

公开(公告)日：2014-08-14

申请号：PCT/US2014/015319

申请日：2014-02-07

Applicant: SUBRAMANIAN, Chitra K. ,  LIN, Halbert S. ,  ALAM, Syed M. ,  ANDRE, Thomas ,  EVERSPIN TECHNOLOGIES, INC.

Inventor： SUBRAMANIAN, Chitra K. ,  LIN, Halbert S. ,  ALAM, Syed M. ,  ANDRE, Thomas

IPC: G06F11/00

CPC classification number: G06F21/79 ,  G06F21/60 ,  G11C7/14 ,  G11C7/24 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0059 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0073

Abstract: A technique for detecting tampering attempts directed at a memory device includes setting each of a plurality of detection memory cells to an initial predetermined state, where corresponding portions of the plurality of detection memory cells are included in each of the arrays of data storage memory cells on the memory device. A plurality of corresponding reference bits on the memory device permanently store information representative of the initial predetermined state of each of the detection memory elements.

Abstract translation: 用于检测针对存储器件的篡改尝试的技术包括将多个检测存储器单元中的每一个设置为初始预定状态，其中多个检测存储器单元的相应部分被包括在每个数据存储单元阵列中 存储设备。 存储器装置上的多个对应的参考位永久地存储表示每个检测存储器元件的初始预定状态的信息。

公开(公告)号：WO2014058994A2

公开(公告)日：2014-04-17

申请号：PCT/US2013/064088

申请日：2013-10-09

Applicant: ANDRE, Thomas ,  ALAM, Syed M. ,  LIN, Halbert S. ,  EVERSPIN TECHNOLOGIES, INC.

Inventor： ANDRE, Thomas ,  ALAM, Syed M. ,  LIN, Halbert S.

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G06F12/0802 ,  G06F2212/222 ,  G11C7/00 ,  G11C7/1042 ,  G11C7/12 ,  G11C7/22 ,  G11C11/1673 ,  G11C11/1693 ,  G11C11/4076

Abstract: In some examples, a memory device is configured to receive a precharge command and an activate command. The memory device performs a first series of events related to the precharge command in response to receiving the precharge command and a second series of events related to the activate command in response to receiving the activate command. The memory device delays the start of the second series of events until the first series of events completes.

Abstract translation: 在一些示例中，存储器设备被配置为接收预充电命令和激活命令。 响应于接收到所述预充电命令，响应于接收到所述激活命令，所述存储器装置执行与所述预充电命令相关的第一系列事件和与所述激活命令相关的第二系列事件。 存储器件延迟第二系列事件的开始直到第一系列事件完成。

公开(公告)号：WO2013169593A2

公开(公告)日：2013-11-14

申请号：PCT/US2013/039466

申请日：2013-05-03

Applicant: SUBRAMANIAN, Chitra ,  ALAM, Syed M. ,  EVERSPIN TECHNOLOGIES, INC.

Inventor： SUBRAMANIAN, Chitra ,  ALAM, Syed M.

IPC: G11C11/16

CPC classification number: G11C11/1673

Abstract: Circuitry and a method provide self-referenced sensing of a resistive memory cell by using its characteristic of resistance variation with applied voltage in one state versus a relatively constant resistance regardless of the applied voltage in its opposite state. Based on an initial bias state with equalized resistances, a current comparison at a second bias state between a mock bit line and a bit line is used to determine the state of the memory cell, since a significant difference in current implies that the memory cell state has a significant voltage coefficient of resistance. An offset current applied to the mock bit line optionally may be used to provide symmetry and greater sensing margin.

Abstract translation: 电路和方法通过使用其在一个状态下的施加电压与相对恒定电阻的电阻变化的特性来提供电阻性存储单元的自参考感测，而不管其相反状态下的施加电压如何。 基于具有均衡电阻的初始偏置状态，使用模拟位线和位线之间的第二偏置状态下的电流比较来确定存储器单元的状态，因为电流的显着差异意味着存储单元状态 具有显着的电阻系数。 施加到模拟位线的偏移电流可选地可以用于提供对称性和更大的感测余量。

公开(公告)号：WO2013049811A1

公开(公告)日：2013-04-04

申请号：PCT/US2012/058294

申请日：2012-10-01

Applicant: EVERSPIN TECHNOLOGIES, INC.

Inventor： AGGARWAL, Sanjev ,  NAGEL, Kerry ,  JANESKY, Jason

IPC: H01L43/12 ,  G11C11/15

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.

Abstract translation: 双隧道屏障磁性元件具有位于第一和第二隧道屏障之间的自由磁性层和位于第二隧道屏障上的电极。 两步蚀刻工艺允许在第一次蚀刻之后在电极的侧壁上形成封装材料，并且在进行第二蚀刻以去除自由层的一部分时防止第一隧道势垒的损坏。

公开(公告)号：WO2013006787A1

公开(公告)日：2013-01-10

申请号：PCT/US2012/045739

申请日：2012-07-06

Applicant: EVERSPIN TECHNOLOGIES, INC. ,  LIU, Lianjun ,  MATHER, Phil

Inventor： LIU, Lianjun ,  MATHER, Phil

IPC: G01R31/00

CPC classification number: G01R1/07307 ,  G01R33/0035 ,  G01R33/09 ,  G01R35/00

Abstract: A probe card and method are provided for testing magnetic sensors at the wafer level. The probe card has one or more probe tips having a first pair of solenoid coils in parallel configuration on first opposed sides of each probe tip to supply a magnetic field in a first (X) direction, a second pair of solenoid coils in parallel configuration on second opposed sides of each probe tip to supply a magnetic field in a second (Y) direction orthogonal to the first direction, and an optional third solenoid coil enclosing or inscribing the first and second pair to supply a magnetic field in a third direction (Z) orthogonal to both the first and second directions. The first pair, second pair, and third coil are each symmetrical with a point on the probe tip array, the point being aligned with and positioned close to a magnetic sensor during test.

Abstract translation: 提供探针卡和方法来测试晶片级的磁性传感器。 探针卡具有一个或多个探针尖端，其具有在每个探针尖端的第一相对侧上并联构造的第一对螺线管线圈，以在第一（X）方向上提供磁场，第二对螺线管线圈以 每个探针尖端的第二相对侧在与第一方向正交的第二（Y）方向上提供磁场，以及可选的第三电磁线圈，其包围或刻划第一和第二对以在第三方向（Z ）与第一和第二方向正交。 第一对，第二对和第三线圈各自与探针尖端阵列上的点对称，在测试期间该点与磁性传感器对准并靠近磁性传感器。

公开(公告)号：WO2010098967A1

公开(公告)日：2010-09-02

申请号：PCT/US2010/023444

申请日：2010-02-08

Applicant: EVERSPIN TECHNOLOGIES, INC. ,  MATHER, Phillip G. ,  SLAUGHTER, Jon, M.

Inventor： MATHER, Phillip G. ,  SLAUGHTER, Jon, M.

IPC: G01R33/05

CPC classification number: G01R33/098

Abstract: A magnetic field sensing device for determining the strength of a magnetic field, includes four magnetic tunnel junction elements or element arrays (100) configured as a bridge (200). A current source is coupled to a current line (116) disposed near each of the four magnetic tunnel junction elements (100) for selectively supplying temporally spaced first and second currents. Sampling circuitry (412, 414) coupled to the current source samples the bridge output during the first and second currents and determines the value of the magnetic field from the difference of the first and second values.

Abstract translation: 用于确定磁场强度的磁场感测装置包括配置为桥（200）的四个磁隧道结元件或元件阵列（100）。 电流源耦合到设置在四个磁性隧道结元件（100）中的每一个附近的电流线（116），用于选择性地提供时间间隔的第一和第二电流。 耦合到电流源的采样电路（412,414）在第一和第二电流期间对桥输出进行采样，并根据第一和第二值的差确定磁场的值。

公开(公告)号：WO2004061467A1

公开(公告)日：2004-07-22

申请号：PCT/US2003/034213

申请日：2003-10-28

Applicant: MOTOROLA, INC.

Inventor： JANESKY, Jason, Allen ,  ENGEL, Bradley, N. ,  RIZZO, Nicholas, D. ,  SLAUGHTER, Jon, M.

IPC: G01R33/09

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/12

Abstract: A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices (5) such as a magnetoresistive memory cell includes two ferromagnetic layers (45,55) and an antiferromagnetic coupling layer (65) separating the two ferromagnetic layers. The SAF free layer (15) has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.

Abstract translation: 可以有利地用于诸如磁阻存储器单元的磁电子器件（5）中的几乎平衡的合成反铁磁（SAF）结构包括两个铁磁层（45,55）和分离两个铁磁层的反铁磁耦合层（65）。 SAF自由层（15）通过诸如退火，反铁磁耦合层的分层或在铁磁层的粗糙表面上形成反铁磁耦合层的处理，在反铁磁耦合层中形成弱耦合区域。 与未处理的SAF自由层相比，弱耦合区域降低了SAF自由层的触发场。 在这种结构的写入操作期间使用SAF触发器，并且其减少导致在写入操作期间较低的功耗并且相应地增加了器件性能。

公开(公告)号：WO2004042816A2

公开(公告)日：2004-05-21

申请号：PCT/US2003/014097

申请日：2003-05-07

Applicant: MOTOROLA, INC.

Inventor： FRANSON, Steven, J. ,  EMRICK, Rudy, M. ,  BOSCO, Bruce, A.

IPC: H01L23/00

CPC classification number: H01L28/40 ,  H01G4/01 ,  H01G4/02 ,  H01L27/0805

Abstract: According to the most preferred embodiments of the present invention, at least one of the two plates (710, 720) of a capacitor (700) is formed in at least two different layers of an integrated circuit. The methods of the present invention uses air bridges (715) or some other dielectric medium to isolate certain portions of the two capacitive plates of a capacitor where at least a portion of one of the capacitive plates passes over at least a portion of the other capacitive plate. The line widths, line separation and number of levels used in the topology of the capacitor will determine the overall capacitance value of a given structure.

Abstract translation: 根据本发明的最优选实施例，电容器（700）的两个板（710,720）中的至少一个形成在集成电路的至少两个不同层中。 本发明的方法使用空气桥（715）或一些其它电介质来隔离电容器的两个电容板的某些部分，其中电容板中的至少一部分通过至少一部分电容 盘子。 电容器拓扑结构中的线宽，线间距和电平数决定了给定结构的整体电容值。

公开(公告)号：WO2004026764A1

公开(公告)日：2004-04-01

申请号：PCT/US2003/025050

申请日：2003-08-08

Applicant: MOTOROLA, INC.

Inventor： BURGIN, Timothy, P.

IPC: C01B31/02

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/17

Abstract: An exemplary method for substantially non-chemically-reactive separation of nanomorphic carbon species (140) comprises inter alia the steps of suspending a nanomorphic carbon sample (100) in an aqueous surfactant suspension (110), adding nanoparticles to the sample suspension (115), sonicating the sample (120), centrifugating the sample suspension (125) and decanting off the resulting supernatant (130). Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to improve carbon nanospecies purification. An exemplary embodiment of the present invention representatively provides for non-oxidative cleaning of carbon nanotubes via at least partial removal of amorphous carbon contaminants.

Abstract translation: 用于纳米形碳物质（140）的基本上非化学反应性分离的示例性方法尤其包括将纳米形碳样品（100）悬浮在水性表面活性剂悬浮液（110）中的步骤，向样品悬浮液（115）中加入纳米颗粒， 超声处理样品（120），离心样品悬浮液（125）并倾析出所得上清液（130）。 公开的特征和规格可以被不同地控制，适应或以其他方式任意地修饰以改进碳纳米微粒的纯化。 本发明的示例性实施方案代表性地通过至少部分去除无定形碳污染物来提供碳纳米管的非氧化性清洁。

公开(公告)号：WO2004016949A1

公开(公告)日：2004-02-26

申请号：PCT/US2003/022405

申请日：2003-07-18

Applicant: MOTOROLA, INC.

Inventor： DAI, Xunhu ,  OLIVER, Manuel

IPC: F04B53/10

CPC classification number: F04B53/1057 ,  F04B43/043 ,  F16K15/147 ,  Y10T137/7772 ,  Y10T137/7885 ,  Y10T137/7895

Abstract: An exemplary device and method for microfluidic transport is disclosed as providing inter alia a passive check valve (100), a fluid inlet channel (210), a fluid outlet channel (220) and a pumping cavity (240). The fluid inlet channel (210) is generally configured to flow a fluid through the check valve (100). The check valve (100) generally provides substantially passive means for preventing or otherwise decreasing the incidence of purged outlet fluid re-entering either the pumping cavity (240) or the fluid inlet channel (210). Accordingly, the reduction of backflow generally tends to enhance overall pumping performance and efficiency. Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to improve micropump operation in any microfluidic application. Exemplary embodiments of the present invention representatively provide for substantially self-priming micropumps that may be readily integrated with, for example, existing portable ceramic technologies for the improvement of device package form factors, weights and other manufacturing and/or device performance metrics.

Abstract translation: 公开了一种用于微流体输送的示例性装置和方法，其特别是提供被动止回阀（100），流体入口通道（210），流体出口通道（220）和泵送腔（240）。 流体入口通道（210）通常构造成使流体流过止回阀（100）。 止回阀（100）通常提供基本上被动的装置，用于防止或以其他方式减少重新进入泵送腔（240）或流体入口通道（210）的净化出口流体的入射。 因此，回流的减少通常倾向于提高整体泵送性能和效率。 公开的特征和规格可以被不同地控制，适应或以其他方式任意地修改以改善任何微流体应用中的微泵操作。 本发明的示例性实施例代表性地提供了可以容易地与例如现有便携式陶瓷技术集成以用于改进装置包装形状因子，重量和其它制造和/或装置性能度量的基本上自吸的微型泵。