公开(公告)号：WO2010080855A2

公开(公告)日：2010-07-15

申请号：PCT/US2010/020284

申请日：2010-01-06

Applicant: ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  LAKOTA TECHNOLOGIES INC.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/861 ,  H01L29/872

CPC classification number: H01L29/7412 ,  H01L27/0811 ,  H01L27/0814 ,  H01L29/861

Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

Abstract translation: 可用于整流电流的二端装置。 在内部，它具有相反类型的MOS栅极和探针区域之间的再生耦合。 这种再生耦合可以实现比理想二极管更好的性能。

公开(公告)号：WO2010127370A3

公开(公告)日：2011-03-10

申请号：PCT/US2010033451

申请日：2010-05-03

Applicant: ANKOUDINOV ALEXEI ,  RODOV VLADIMIR ,  BLANCHARD RICHARD A ,  LAKOTA TECHNOLOGIES INC

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR ,  BLANCHARD RICHARD A

IPC: H01L29/861 ,  H01L21/82 ,  H01L23/62

CPC classification number: H01L27/088 ,  H01L29/423 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7815 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.

Abstract translation: 半导体保护装置及相关方法和系统，尤其是用于提供串联电流限制的装置。 器件通常包括串联背对背连接的两个再生建筑模块和/或MOSFET，其中一个MOSFET /再生构件模块具有一个额外的电压探针电极，其向另一个通孔提供具有自限制电压的再生信号 耦合到其栅电极。

公开(公告)号：WO2010030400A1

公开(公告)日：2010-03-18

申请号：PCT/US2009/031885

申请日：2009-01-23

Applicant: LAKOTA TECHNOLOGIES, INC. ,  ANKOUDINOV, Alexei ,  RODOV, Vladimir

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L23/48

CPC classification number: H01L29/7815 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/66727 ,  H01L2924/0002 ,  H02M7/06 ,  H01L2924/00

Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

Abstract translation: 整流器结构单元有四个电极：源极，漏极，栅极和探针。 主电流在源极和漏极之间流动。 栅极电压控制MOS栅极下窄通道的电导率，并可将RBB切换到ON状态和ON状态。 成对使用，RBB可以配置为三端半桥整流器，其性能优于理想的二极管性能，类似于同步整流器，但不需要控制电路。 N型和P型对可以配置为全桥整流器。 其他组合也可以创建各种设备。

公开(公告)号：WO2009042807A3

公开(公告)日：2009-12-30

申请号：PCT/US2008077747

申请日：2008-09-25

Applicant: LAKOTA TECHNOLOGIES INC ,  ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L27/0817 ,  H01L29/0646 ,  H01L29/66075 ,  H01L29/66477 ,  H01L29/7802 ,  H01L29/861

Abstract: An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.

Abstract translation: 可调整的场效应整流器利用MOSFET结构的一些方面以及调整口袋或区域来产生在高电压下可靠且高效地工作而没有显着负阻的器件，同时还允许在没有大电磁干扰的情况下在高频率下快速恢复和操作。

公开(公告)号：WO2009042807A2

公开(公告)日：2009-04-02

申请号：PCT/US2008/077747

申请日：2008-09-25

Applicant: LAKOTA TECHNOLOGIES, INC. ,  ANKOUDINOV, Alexei ,  RODOV, Vladimir

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

IPC: H01L29/68

CPC classification number: H01L29/78 ,  H01L27/0817 ,  H01L29/0646 ,  H01L29/66075 ,  H01L29/66477 ,  H01L29/7802 ,  H01L29/861

Abstract: An Adjustable Field Effect Rectifier uses aspects of MOSFET structure together with an adjustment pocket or region to result in a device that functions reliably and efficiently at high voltages without significant negative resistance, while also permitting fast recovery and operation at high frequency without large electromagnetic interference.

Abstract translation: 可调整场效应整流器使用MOSFET结构的一些方面以及调整口袋或区域，以产生在高电压下可靠而高效地工作而无显着的负电阻的器件，同时还允许在高频下快速恢复和操作而没有大的电磁干扰。

公开(公告)号：WO2010127370A2

公开(公告)日：2010-11-04

申请号：PCT/US2010/033451

申请日：2010-05-03

Applicant: ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  BLANCHARD, Richard, A. ,  LAKOTA TECHNOLOGIES, INC.

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  BLANCHARD, Richard, A.

IPC: H01L29/861 ,  H01L21/82 ,  H01L23/62

CPC classification number: H01L29/7815 ,  H01L27/088 ,  H01L29/423 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor protection devices, and related methods and systems, especially devices for providing series current limiting. The device typically comprises two regenerative building blocks and/or MOSFETs connected back-to-back in series, where one of the MOSFETs/Regenerative Building Blocks has an extra voltage probe electrode that provides a regenerative signal with self-limited voltage to the other via coupling to its gate electrode.

Abstract translation: 半导体保护装置及相关方法和系统，尤其是用于提供串联电流限制的装置。 器件通常包括串联背对背连接的两个再生建筑模块和/或MOSFET，其中一个MOSFET /再生构件模块具有一个额外的电压探针电极，其向另一个通孔提供具有自限制电压的再生信号 耦合到其栅电极。

公开(公告)号：WO2010080855A3

公开(公告)日：2010-10-21

申请号：PCT/US2010020284

申请日：2010-01-06

Applicant: ANKOUDINOV ALEXEI ,  RODOV VLADIMIR ,  LAKOTA TECHNOLOGIES INC

Inventor： ANKOUDINOV ALEXEI ,  RODOV VLADIMIR

IPC: H01L29/861 ,  H01L29/872

CPC classification number: H01L29/7412 ,  H01L27/0811 ,  H01L27/0814 ,  H01L29/861

Abstract: A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative coupling allows to achieve performance better than that of ideal diode.

Abstract translation: 可用于整流电流的两端设备。 它在内部具有相反类型的MOS栅极和探针区域之间的再生耦合。 这种再生耦合允许实现比理想二极管更好的性能。

公开(公告)号：WO2009134812A1

公开(公告)日：2009-11-05

申请号：PCT/US2009/041996

申请日：2009-04-28

Applicant: LAKOTA TECHNOLOGIES, INC. ,  ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

IPC: H01L21/335

CPC classification number: H01L29/7813 ,  H01L29/7803 ,  H01L29/7805

Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25μm technology. Self-aligned processing can be used.

Abstract translation: 改进的MOSFET结构包括连接在MOSFET的源极和漏极之间的集成场效应整流器，以在MOSFET的开关期间分流电流。 由于在开关期间不存在注入的载流子，集成的FER提供了MOSFET更快的切换，同时也降低了相对于离散解决方案的EMI水平。 MOSFET和FER的集成结构可以使用包括0.25μm技术的N，多外延和超级技术来制造。 可以使用自对准处理。