中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.008 seconds)

    REGENERATIVE BUILDING BLOCK AND DIODE BRIDGE RECTIFIER AND METHODS
    5.
    发明申请
    REGENERATIVE BUILDING BLOCK AND DIODE BRIDGE RECTIFIER AND METHODS 审中-公开
    再生建筑块和二极管整流器及方法

    公开(公告)号：WO2010030400A1

    公开(公告)日：2010-03-18

    申请号：PCT/US2009/031885

    申请日：2009-01-23

    Applicant: LAKOTA TECHNOLOGIES, INC. ,  ANKOUDINOV, Alexei ,  RODOV, Vladimir

    Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir

    IPC: H01L23/48

    CPC classification number: H01L29/7815 ,  H01L29/41766 ,  H01L29/423 ,  H01L29/66727 ,  H01L2924/0002 ,  H02M7/06 ,  H01L2924/00

    Abstract: A rectifier building block has four electrodes: source, drain, gate and probe. The main current flows between the source and drain electrodes. The gate voltage controls the conductivity of a narrow channel under a MOS gate and can switch the RBB between OFF and ON states. Used in pairs, the RBB can be configured as a three terminal half-bridge rectifier which exhibits better than ideal diode performance, similar to synchronous rectifiers but without the need for control circuits. N-type and P-type pairs can be configured as a full bridge rectifier. Other combinations are possible to create a variety of devices.

    Abstract translation: 整流器结构单元有四个电极：源极，漏极，栅极和探针。 主电流在源极和漏极之间流动。 栅极电压控制MOS栅极下窄通道的电导率，并可将RBB切换到ON状态和ON状态。 成对使用，RBB可以配置为三端半桥整流器，其性能优于理想的二极管性能，类似于同步整流器，但不需要控制电路。 N型和P型对可以配置为全桥整流器。 其他组合也可以创建各种设备。

    INTEGRATED CIRCUIT INCLUDING POWER DIODE
    6.
    发明申请
    INTEGRATED CIRCUIT INCLUDING POWER DIODE 审中-公开
    集成电路，包括功率二极管

    公开(公告)号：WO2006078573A2

    公开(公告)日：2006-07-27

    申请号：PCT/US2006001362

    申请日：2006-01-12

    Applicant: APD SEMICONDUCTOR INC ,  CHANG PAUL ,  CHERN GEENG-CHUAN ,  GHOSH PROGNYAN ,  HSUEH WAYNE Y W ,  RODOV VLADIMIR

    Inventor： CHANG PAUL ,  CHERN GEENG-CHUAN ,  GHOSH PROGNYAN ,  HSUEH WAYNE Y W ,  RODOV VLADIMIR

    IPC: H01L29/00

    CPC classification number: H01L27/0629 ,  H01L29/0692 ,  H01L29/78 ,  H01L29/861

    Abstract: A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.

    Abstract translation: 一种制造包括功率二极管的半导体集成电路的方法包括提供第一导电类型的半导体衬底，在衬底的第一区域中制造诸如CMOS晶体管电路的集成电路，并且在第二区域中制造功率二极管 半导体衬底。 介电材料形成在第一区域和第二区域之间，从而在第一区域中的集成电路与第二区域中的功率二极管之间提供电隔离。 功率二极管可以包括由二极管的一个电极连接在一起的多个MOS源极/漏极元件和相关联的栅极元件，并且第二区域中的半导体层可以用作功率二极管的另一个源极/漏极。

    MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER
    9.
    发明申请
    MOSFET WITH INTEGRATED FIELD EFFECT RECTIFIER 审中-公开
    具有集成场效应整流器的MOSFET

    公开(公告)号：WO2009134812A1

    公开(公告)日：2009-11-05

    申请号：PCT/US2009/041996

    申请日：2009-04-28

    Applicant: LAKOTA TECHNOLOGIES, INC. ,  ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

    Inventor： ANKOUDINOV, Alexei ,  RODOV, Vladimir ,  CORDELL, Richard

    IPC: H01L21/335

    CPC classification number: H01L29/7813 ,  H01L29/7803 ,  H01L29/7805

    Abstract: A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25μm technology. Self-aligned processing can be used.

    Abstract translation: 改进的MOSFET结构包括连接在MOSFET的源极和漏极之间的集成场效应整流器，以在MOSFET的开关期间分流电流。 由于在开关期间不存在注入的载流子，集成的FER提供了MOSFET更快的切换，同时也降低了相对于离散解决方案的EMI水平。 MOSFET和FER的集成结构可以使用包括0.25μm技术的N，多外延和超级技术来制造。 可以使用自对准处理。

    INTEGRATED CIRCUIT INCLUDING POWER DIODE
    10.
    发明申请
    INTEGRATED CIRCUIT INCLUDING POWER DIODE 审中-公开

    公开(公告)号：WO2006078573A3

    公开(公告)日：2006-07-27

    申请号：PCT/US2006/001362

    申请日：2006-01-12

    Applicant: APD SEMICONDUCTOR, INC. ,  CHANG, Paul ,  CHERN, Geeng-chuan ,  GHOSH, Prognyan ,  HSUEH, Wayne Y., W. ,  RODOV, Vladimir

    Inventor： CHANG, Paul ,  CHERN, Geeng-chuan ,  GHOSH, Prognyan ,  HSUEH, Wayne Y., W. ,  RODOV, Vladimir

    IPC: H01L29/00

    Abstract: A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.

Patent Agency Ranking