中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

4 records (took 0.007 seconds)

    SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE
    2.
    发明申请
    SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE 审中-公开

    公开(公告)号：WO2009007907A3

    公开(公告)日：2009-01-15

    申请号：PCT/IB2008/052727

    申请日：2008-07-07

    Applicant: NXP B.V. ,  WUNNICKE, Olaf ,  BORGSTROM, Lars, Magnus ,  MADAKASIRA, Vijayaraghavan

    Inventor： WUNNICKE, Olaf ,  BORGSTROM, Lars, Magnus ,  MADAKASIRA, Vijayaraghavan

    IPC: H01L21/20

    Abstract: A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface.

    SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE
    3.
    发明申请
    SINGLE CRYSTAL GROWTH ON A MIS-MATCHED SUBSTRATE 审中-公开
    不匹配的基体上的单晶生长

    公开(公告)号：WO2009007907A2

    公开(公告)日：2009-01-15

    申请号：PCT/IB2008052727

    申请日：2008-07-07

    Applicant: NXP BV ,  WUNNICKE OLAF ,  BORGSTROM LARS MAGNUS ,  MADAKASIRA VIJAYARAGHAVAN

    Inventor： WUNNICKE OLAF ,  BORGSTROM LARS MAGNUS ,  MADAKASIRA VIJAYARAGHAVAN

    IPC: H01L21/20

    CPC classification number: C30B29/60 ,  C30B11/12 ,  H01L21/02381 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647 ,  H01L21/02653

    Abstract: A process for forming a single crystal layer of one material type such as III-V semiconductor) onto a substrate of a different material type such as silicon. A substrate of a first material type is provided. At least one discrete region of catalyst material is deposited onto the substrate, the discrete region defining a seed area of the substrate. A second material type such as III-V semiconductor is grown as a single crystal nanowire onto the substrate between the substrate and catalyst material, the nanowire of second material type extending upward from the substrate with lateral dimensions not substantially exceeding the seed area. After growth of the nanowire, growth conditions are changed so as to epitaxially grow the second material type laterally from the single crystal nanowire in a direction parallel to the substrate surface.

    Abstract translation: 用于形成诸如III-V半导体的一种材料类型的单晶层的方法）到不同材料类型如硅的衬底上。 提供第一材料类型的衬底。 催化剂材料的至少一个离散区域沉积在衬底上，离散区域限定衬底的种子区域。 将诸如III-V半导体的第二材料类型作为单晶纳米线生长到衬底和催化剂材料之间的衬底上，第二材料类型的纳米线从衬底向上延伸，侧面尺寸基本上不超过晶种面积。 在纳米线生长之后，生长条件发生变化，从而在平行于衬底表面的方向上从单晶纳米线横向生长第二材料类型。

Patent Agency Ranking