MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE
    1.
    发明申请
    MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE 审中-公开
    多波段旋转盘反应器与惯性行星传动

    公开(公告)号:WO2011156371A1

    公开(公告)日:2011-12-15

    申请号:PCT/US2011/039441

    申请日:2011-06-07

    CPC classification number: H01L21/68771 C23C16/4584 H01L21/68764

    Abstract: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier (220) may include a platen (215) with a plurality of compartments and a plurality of wafer platforms (210). The platen (215) is configured to rotate about a first axis. Each of the wafer platforms (210) is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment (770). The platen (215) and the wafer platforms (210) rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen (215) about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms (210) carried on the platen (215) and carrying the wafers (200) about a respective second axis of rotation and with a different angular velocity than the platen (215) to create planetary motion therebetween.

    Abstract translation: 用于在反应器中移动晶片的晶片载体和方法。 晶片载体(220)可以包括具有多个隔室的台板(215)和多个晶片平台(210)。 压板(215)构造成围绕第一轴线旋转。 每个晶片平台(210)与隔室中的一个相关联并且被配置为相对于相应的隔室(770)围绕相应的第二轴线旋转。 压板(215)和晶片平台(210)以不同的角速度旋转以在它们之间产生行星运动。 该方法可以包括围绕第一旋转轴旋转压板(215)。 该方法还包括旋转承载在压板(215)上的多个晶片平台(210)中的每一个并且以相对于第二旋转轴线和与压板(215)不同的角速度运送晶片(200)以产生 行星运动。

    APPARATUS AND METHODS FOR MANAGING THE TEMPERATURE OF A SUBSTRATE IN A HIGH VACUUM PROCESSING SYSTEM
    4.
    发明申请
    APPARATUS AND METHODS FOR MANAGING THE TEMPERATURE OF A SUBSTRATE IN A HIGH VACUUM PROCESSING SYSTEM 审中-公开
    用于管理高真空处理系统中的基板的温度的装置和方法

    公开(公告)号:WO2007146782A2

    公开(公告)日:2007-12-21

    申请号:PCT/US2007070728

    申请日:2007-06-08

    CPC classification number: H01L21/67109 F25B21/02 H01L21/67103 H01L21/67248

    Abstract: Apparatus and methods for improving the control of the temperature of a supported member, such as a substrate, in high vacuum processing systems, such as ion beam etch (IBE) systems. The apparatus includes thermoelectric devices (70) that transfer heat from a support member (42) supporting the supported member (20) to a liquid-cooled heat exchange member (44) to regulate the temperature of the support member (42). The method includes cooling the support member (42) with thermoelectric devices (70) that transfer the heat to the liquid-cooled heat exchange member (44).

    Abstract translation: 用于改进在诸如离子束蚀刻(IBE)系统的高真空处理系统中的诸如衬底的被支撑构件的温度控制的装置和方法。 该装置包括将支撑构件(20)的支撑构件(42)的热传递到液冷的热交换构件(44)以调节支撑构件(42)的温度的热电装置(70)。 该方法包括用将热量转移到液冷的热交换构件(44)的热电装置(70)来冷却支撑构件(42)。

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