公开(公告)号：WO2013123431A1

公开(公告)日：2013-08-22

申请号：PCT/US2013/026492

申请日：2013-02-15

Applicant: APPLIED MATERIALS, INC. ,  CHEN, Jrjyan Jerry ,  WON, Tae Kyung ,  PARK, Beom Soo ,  CHOI, Young Jin ,  CHOI, Soo Young

Inventor： CHEN, Jrjyan Jerry ,  WON, Tae Kyung ,  PARK, Beom Soo ,  CHOI, Young Jin ,  CHOI, Soo Young

IPC: H01L51/56 ,  H05B33/10 ,  H05B33/04

CPC classification number: H01L51/5256 ,  C23C16/26 ,  C23C16/345

Abstract: A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.

Abstract translation: 描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。 在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。 在其他实施例中，有机介电层夹在无机封装层之间。

公开(公告)号：WO2013003004A3

公开(公告)日：2013-05-16

申请号：PCT/US2012041603

申请日：2012-06-08

Applicant: APPLIED MATERIALS INC ,  CHEN JRJYAN JERRY ,  CHOI SOO YOUNG ,  YIM DONG-KIL ,  YE YAN

Inventor： CHEN JRJYAN JERRY ,  CHOI SOO YOUNG ,  YIM DONG-KIL ,  YE YAN

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L29/78606 ,  H01L29/7869

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

Abstract translation: 本发明一般涉及制造TFT的方法。 TFT具有包含IGZO或氧化锌的有源沟道。 在形成源电极和漏电极之后，但是在钝化层或蚀刻停止层之前沉积，活性通道暴露于N 2 O或O 2等离子体。 活性通道与钝化层或蚀刻停止层之间的界面在形成源极和漏极期间被改变或损坏。 N2O或O2等离子体改变和修复有源通道与钝化或蚀刻停止层之间的界面。

公开(公告)号：WO2012109113A3

公开(公告)日：2012-11-29

申请号：PCT/US2012023853

申请日：2012-02-03

Applicant: APPLIED MATERIALS INC ,  HAAS DIETER ,  WHITE JOHN M ,  KWAK BYUNG-SUNG LEO ,  CHOI SOO YOUNG ,  CHEN JRJYAN JERRY ,  DIEGUEZ-CAMPO JOSE MANUEL

Inventor： HAAS DIETER ,  WHITE JOHN M ,  KWAK BYUNG-SUNG LEO ,  CHOI SOO YOUNG ,  CHEN JRJYAN JERRY ,  DIEGUEZ-CAMPO JOSE MANUEL

IPC: H01L51/50 ,  H01L51/56 ,  H05B33/04

CPC classification number: H01L51/0014 ,  H01L51/5253

Abstract: Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process.

Abstract translation: 提供了使用软/聚合物掩模技术封装设置在基板上的OLED结构的方法。 与常规硬掩模图案化技术相比，软/聚合物掩模技术可以有效地提供简单且低成本的OLED封装方法。 软/聚合物掩模技术可以利用单一聚合物掩模以低成本完成整个封装工艺，并且在使用常规金属掩模时不存在对准问题。 不是使用软/聚合物掩模，而是可以将封装层消隐沉积，然后激光烧蚀，使得在封装过程中不使用掩模。

公开(公告)号：WO2010042860A3

公开(公告)日：2010-07-15

申请号：PCT/US2009060230

申请日：2009-10-09

Applicant: APPLIED MATERIALS INC ,  WHITE JOHN M ,  CHOI SOO YOUNG ,  SORENSEN CARL A ,  KUDELA JOZEF ,  BAEK JONGHOON ,  CHEN JRJYAN JERRY ,  MCPHERSON STEPHEN ,  TINER ROBIN L

Inventor： WHITE JOHN M ,  CHOI SOO YOUNG ,  SORENSEN CARL A ,  KUDELA JOZEF ,  BAEK JONGHOON ,  CHEN JRJYAN JERRY ,  MCPHERSON STEPHEN ,  TINER ROBIN L

IPC: H05H1/34 ,  H01L21/205

CPC classification number: C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32174

Abstract: A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.

Abstract translation: 提供了一种具有低阻抗的RF返回路径的方法和设备，其将衬底支撑件耦合到等离子体处理系统中的室壁。 在一个实施例中，处理腔室包括：腔室主体，其具有腔室侧壁，底部和由腔室侧壁支撑的盖组件，所述腔室侧壁限定处理区域;基板支撑件，其设置在腔室主体的处理区域中;阴影框架， 衬底支撑组件的边缘以及RF返回路径，RF返回路径具有耦合到影子框架的第一端和耦合到腔室侧壁的第二端。

公开(公告)号：WO2013003004A2

公开(公告)日：2013-01-03

申请号：PCT/US2012/041603

申请日：2012-06-08

Applicant: APPLIED MATERIALS, INC. ,  CHEN, Jrjyan Jerry ,  CHOI, Soo Young ,  YIM, Dong-Kil ,  YE, Yan

Inventor： CHEN, Jrjyan Jerry ,  CHOI, Soo Young ,  YIM, Dong-Kil ,  YE, Yan

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L29/78606 ,  H01L29/7869

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N 2 O or O 2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N 2 O or O 2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.

Abstract translation: 本发明总体上涉及一种制造TFT的方法。 TFT具有包含IGZO或氧化锌的有源沟道。 在形成源电极和漏电极之后，但是在其上沉积钝化层或蚀刻停止层之前，将活性通道暴露于N 2 O或O 2等离子体 。 在形成源电极和漏电极期间，有源沟道与钝化层或蚀刻停止层之间的界面或者被改变或者被损坏。 N 2 O或O 2等离子体改变并修复有源沟道和钝化层或蚀刻停止层之间的界面。

公开(公告)号：WO2012109038A3

公开(公告)日：2012-08-16

申请号：PCT/US2012/023129

申请日：2012-01-30

Applicant: APPLIED MATERIALS, INC. ,  CHEN, Jrjyan Jerry ,  CHOI, Soo Young

Inventor： CHEN, Jrjyan Jerry ,  CHOI, Soo Young

IPC: H01L51/50 ,  H05B33/04 ,  H05B33/10

Abstract: Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

公开(公告)号：WO2012109038A2

公开(公告)日：2012-08-16

申请号：PCT/US2012023129

申请日：2012-01-30

Applicant: APPLIED MATERIALS INC ,  CHEN JRJYAN JERRY ,  CHOI SOO YOUNG

Inventor： CHEN JRJYAN JERRY ,  CHOI SOO YOUNG

IPC: H01L51/50 ,  H05B33/04 ,  H05B33/10

CPC classification number: H01L51/56 ,  H01L51/0001 ,  H01L51/5237 ,  H01L51/5253 ,  H01L51/5256

Abstract: Methods and apparatus for encapsulating organic light emitting diode (OLED) structures disposed on a substrate using a hybrid layer of material are provided. The processing parameters used during deposition of the hybrid layer of material allow control of the characteristics of the deposited hybrid layer. The hybrid layer may be deposited such that the layer has characteristics of an inorganic material in some sublayers of the hybrid layer and characteristics of an organic material in other sublayers of the hybrid layer. Use of the hybrid material allows OLED encapsulation using a single hard mask for the complete encapsulating process with low cost and without alignment issues present in conventional processes.

Abstract translation: 提供了使用混合材料层来封装布置在衬底上的有机发光二极管（OLED）结构的方法和装置。 在沉积混合材料层期间使用的处理参数允许控制沉积的混合层的特性。 混合层可以被沉积为使得该层具有混合层的一些子层中的无机材料的特性以及混合层的其他子层中的有机材料的特性。 混合材料的使用允许使用单个硬掩模进行OLED封装，从而以低成本完成封装工艺并且不存在常规工艺中存在的对准问题。

公开(公告)号：WO2012109113A2

公开(公告)日：2012-08-16

申请号：PCT/US2012/023853

申请日：2012-02-03

Applicant: APPLIED MATERIALS, INC. ,  HAAS, Dieter ,  WHITE, John M. ,  KWAK, Byung-Sung Leo ,  CHOI, Soo Young ,  CHEN, Jrjyan Jerry ,  DIEGUEZ-CAMPO, Jose Manuel

Inventor： HAAS, Dieter ,  WHITE, John M. ,  KWAK, Byung-Sung Leo ,  CHOI, Soo Young ,  CHEN, Jrjyan Jerry ,  DIEGUEZ-CAMPO, Jose Manuel

IPC: H01L51/50 ,  H05B33/04 ,  H01L51/56

CPC classification number: H01L51/0014 ,  H01L51/5253

Abstract: Methods for encapsulating OLED structures disposed on a substrate using a soft/polymer mask technique are provided. The soft/polymer mask technique can efficiently provide a simple and low cost OLED encapsulation method, as compared to convention hard mask patterning techniques. The soft/polymer mask technique can utilize a single polymer mask to complete the entire encapsulation process with low cost and without alignment issues present when using conventional metal masks. Rather than utilizing a soft/polymer mask, the encapsulation layers may be blanked deposited and then laser ablated such that no masks are utilized during the encapsulation process.

Abstract translation: 提供了使用软/聚合物掩模技术来封装设置在衬底上的OLED结构的方法。 与常规硬掩模图案化技术相比，软/聚合物掩模技术可以有效地提供简单且低成本的OLED封装方法。 软/聚合物掩模技术可以利用单个聚合物掩模以低成本完成整个封装过程，并且在使用传统金属掩模时不存在对准问题。 除了使用软/聚合物掩模之外，封装层可以被冲切沉积，然后被激光烧蚀，使得在封装过程中不使用掩模。

公开(公告)号：WO2012015578A1

公开(公告)日：2012-02-02

申请号：PCT/US2011/043358

申请日：2011-07-08

Applicant: APPLIED MATERIALS, INC. ,  TINER, Robin L. ,  CHOI, Soo Young ,  WANG, Qunhua ,  CHEN, Jrjyan Jerry

Inventor： TINER, Robin L. ,  CHOI, Soo Young ,  WANG, Qunhua ,  CHEN, Jrjyan Jerry

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/205

CPC classification number: B05B1/005 ,  C23C16/45565 ,  H01J37/3244

Abstract: Embodiments of the present invention generally provide apparatus and methods for supporting a gas distribution showerhead in a processing chamber. In one embodiment, a gas distribution showerhead for a vacuum chamber is provided. The gas distribution showerhead comprises a body having a first side and a second side opposite the first side, and a plurality of gas passages formed through the body, the gas passages comprising a first bore formed in the first side that is fluidly coupled to a second bore formed in the second side by a restricting orifice, and a suspension feature formed in the first bore of at least one of the gas passages.

Abstract translation: 本发明的实施例通常提供用于在处理室中支撑气体分配喷头的装置和方法。 在一个实施例中，提供了一种用于真空室的气体分配喷头。 所述气体分配喷头包括具有第一侧和与所述第一侧相对的第二侧的主体和穿过所述主体形成的多个气体通道，所述气体通道包括形成在所述第一侧中的第一孔，所述第一孔流体地联接到第二侧 通过限制孔形成在第二侧中的孔，以及形成在至少一个气体通道的第一孔中的悬挂特征。

公开(公告)号：WO2010042860A2

公开(公告)日：2010-04-15

申请号：PCT/US2009/060230

申请日：2009-10-09

Applicant: APPLIED MATERIALS, INC. ,  WHITE, John M. ,  CHOI, Soo Young ,  SORENSEN, Carl A. ,  KUDELA, Jozef ,  BAEK, Jonghoon ,  CHEN, Jrjyan Jerry ,  MCPHERSON, Stephen ,  TINER, Robin L.

Inventor： WHITE, John M. ,  CHOI, Soo Young ,  SORENSEN, Carl A. ,  KUDELA, Jozef ,  BAEK, Jonghoon ,  CHEN, Jrjyan Jerry ,  MCPHERSON, Stephen ,  TINER, Robin L.

IPC: H05H1/34 ,  H01L21/205

CPC classification number: C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32174

Abstract: A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.

Abstract translation: 提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。 在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件， 衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。