公开(公告)号：WO2010147937A3

公开(公告)日：2010-12-23

申请号：PCT/US2010/038604

申请日：2010-06-15

Applicant: APPLIED MATERIALS, INC. ,  SWENBERG, Johanes ,  CHU, David ,  GUARINI, Theresa Kramer ,  CHO, Yonah ,  GANGULY, Udayan ,  DATE, Lucien

Inventor： SWENBERG, Johanes ,  CHU, David ,  GUARINI, Theresa Kramer ,  CHO, Yonah ,  GANGULY, Udayan ,  DATE, Lucien

IPC: H01L21/8247 ,  H01L27/115

Abstract: Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.

公开(公告)号：WO2010117703A2

公开(公告)日：2010-10-14

申请号：PCT/US2010/028998

申请日：2010-03-29

Applicant: APPLIED MATERIALS, INC. ,  OLSEN, Christopher S. ,  SWENBERG, Johanes ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  CHO, Yonah

Inventor： OLSEN, Christopher S. ,  SWENBERG, Johanes ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  CHO, Yonah

IPC: H01L21/76 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/3144 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3211 ,  H01L27/11521 ,  Y10S438/911

Abstract: Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.

Abstract translation: 本文提供了形成半导体器件的方法。 在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。 在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。 在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。 在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

公开(公告)号：WO2011008456A3

公开(公告)日：2011-01-20

申请号：PCT/US2010/039753

申请日：2010-06-24

Applicant: APPLIED MATERIALS, INC. ,  YOKOTA, Yoshitaka ,  OLSEN, Christopher, S. ,  TJANDRA, Agus, Sofian ,  CHO, Yonah ,  ROGERS, Matthew S.

Inventor： YOKOTA, Yoshitaka ,  OLSEN, Christopher, S. ,  TJANDRA, Agus, Sofian ,  CHO, Yonah ,  ROGERS, Matthew S.

IPC: H01L21/316 ,  H01L21/31 ,  H01L21/205

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.

公开(公告)号：WO2007130916A3

公开(公告)日：2008-04-24

申请号：PCT/US2007067806

申请日：2007-04-30

Applicant: APPLIED MATERIALS INC ,  KIM YIHWAN ,  FOAD MAJEED A ,  CHO YONAH ,  YE ZHIYUAN ,  ZOJAJI ALI ,  SANCHEZ ERROL

Inventor： KIM YIHWAN ,  FOAD MAJEED A ,  CHO YONAH ,  YE ZHIYUAN ,  ZOJAJI ALI ,  SANCHEZ ERROL

IPC: C23C16/00 ,  B05D3/02 ,  C30B23/00 ,  C30B25/00

CPC classification number: H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

Abstract: A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided.

Abstract translation: 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实质退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。 在某些实施例中，提供具有突变p-n结的结构。

公开(公告)号：WO2010147937A2

公开(公告)日：2010-12-23

申请号：PCT/US2010038604

申请日：2010-06-15

Applicant: APPLIED MATERIALS INC ,  SWENBERG JOHANES ,  CHU DAVID ,  GUARINI THERESA KRAMER ,  CHO YONAH ,  GANGULY UDAYAN ,  DATE LUCIEN

Inventor： SWENBERG JOHANES ,  CHU DAVID ,  GUARINI THERESA KRAMER ,  CHO YONAH ,  GANGULY UDAYAN ,  DATE LUCIEN

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/28273 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S438/911

Abstract: Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.

Abstract translation: 本文描述的实施例通常涉及用于制造闪存设备的闪存设备和方法。 在一个实施例中，提供了用于从衬底的氮化区域中选择性地除去氮的方法。 该方法包括将包括邻近含氧化物层的材料层的衬底定位在处理室中，将衬底暴露于氮化工艺以将氮掺入材料层和含氧化物层的暴露区域上，并将氮化 材料层和含氧化物层的氮化区域包含一定量的含氢气体和一定量的含氧气体的气体混合物，以相对于氮化材料层从含氧化物层的氮化区域选择性地除去氮气 使用自由基氧化工艺。

公开(公告)号：WO2011008456A2

公开(公告)日：2011-01-20

申请号：PCT/US2010039753

申请日：2010-06-24

Applicant: APPLIED MATERIALS INC ,  YOKOTA YOSHITAKA ,  OLSEN CHRISTOPHER S ,  TJANDRA AGUS SOFIAN ,  CHO YONAH ,  ROGERS MATTHEW S

Inventor： YOKOTA YOSHITAKA ,  OLSEN CHRISTOPHER S ,  TJANDRA AGUS SOFIAN ,  CHO YONAH ,  ROGERS MATTHEW S

IPC: H01L21/316 ,  H01L21/205 ,  H01L21/31

CPC classification number: H01L21/3105

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes providing a substrate having an oxide layer disposed thereon, the oxide layer including one or more defects; and exposing the oxide layer to a plasma formed from a process gas comprising an oxygen-containing gas to repair the one or more defects. In some embodiments, the oxide layer may be formed on the substrate. In some embodiments, forming the oxide layer further comprises depositing the oxide layer atop the substrate. In some embodiments, forming the oxide layer further comprises thermally oxidizing the surface of the substrate to form the oxide layer. In some embodiments, a processing temperature is maintained at about 700 degrees Celsius or below during the thermal oxidation of the surface.

Abstract translation: 本文提供了用于处理基材的方法。 在一些实施例中，一种用于处理衬底的方法包括提供其上设置有氧化物层的衬底，所述氧化物层包括一个或多个缺陷; 以及将氧化物层暴露于由包含含氧气体的处理气体形成的等离子体以修复一个或多个缺陷。 在一些实施例中，氧化物层可以形成在衬底上。 在一些实施例中，形成氧化物层还包括在衬底上沉积氧化物层。 在一些实施例中，形成氧化物层还包括热氧化衬底的表面以形成氧化物层。 在一些实施例中，在表面的热氧化期间处理温度保持在约700摄氏度或更低。

公开(公告)号：WO2010117703A3

公开(公告)日：2011-01-13

申请号：PCT/US2010028998

申请日：2010-03-29

Applicant: APPLIED MATERIALS INC ,  OLSEN CHRISTOPHER S ,  SWENBERG JOHANES ,  GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  CHO YONAH

Inventor： OLSEN CHRISTOPHER S ,  SWENBERG JOHANES ,  GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  CHO YONAH

IPC: H01L21/76 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/3144 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3211 ,  H01L27/11521 ,  Y10S438/911

Abstract: Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.

Abstract translation: 本文提供了形成半导体器件的方法。 在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。 在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。 在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。 在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

公开(公告)号：WO2007130916A2

公开(公告)日：2007-11-15

申请号：PCT/US2007/067806

申请日：2007-04-30

Applicant: APPLIED MATERIALS, INC. ,  KIM, Yihwan ,  FOAD, Majeed A. ,  CHO, Yonah ,  YE, Zhiyuan ,  ZOJAJI, Ali ,  SANCHEZ, Errol

Inventor： KIM, Yihwan ,  FOAD, Majeed A. ,  CHO, Yonah ,  YE, Zhiyuan ,  ZOJAJI, Ali ,  SANCHEZ, Errol

IPC: C23C16/00 ,  B05D3/02 ,  C30B23/00 ,  C30B25/00

CPC classification number: H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

Abstract: A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided.

Abstract translation: 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实质退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。 在某些实施例中，提供具有突变p-n结的结构。

公开(公告)号：WO2007027615A1

公开(公告)日：2007-03-08

申请号：PCT/US2006/033545

申请日：2006-08-30

Applicant: APPLIED MATERIALS, INC. ,  WEST, Lawrence, C. ,  WOJCIK, Gregory, L. ,  LEON, Francisco, A. ,  CHO, Yonah ,  GOEBEL, Andreas

Inventor： WEST, Lawrence, C. ,  WOJCIK, Gregory, L. ,  LEON, Francisco, A. ,  CHO, Yonah ,  GOEBEL, Andreas

IPC: G02B6/132 ,  H01L31/0312

CPC classification number: G02B6/132 ,  G02B6/12004 ,  G02B6/1347 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/121 ,  G02B2006/12123 ,  G02B2006/12176 ,  H01L31/02327 ,  H01L31/1812 ,  Y02E10/50

Abstract: A method of fabricating on a substrate an optical detector in an optical waveguide, the method involving: forming at least one layer on a surface of the substrate, said at least one layer comprising SiGe; implanting an impurity into the at least one layer over a first area to form a detector region for the optical detector; etching into the at least one layer in a first region and a second region to form a ridge between the first and second regions, said ridge defining the optical detector and the optical waveguide; filling the first and second regions with a dielectric material having a lower refractive index than SiGe; and after filling the first and second regions with the dielectric material, removing surface material to form a planarized upper surface.

Abstract translation: 一种在基板上制造光波导中的光检测器的方法，所述方法包括：在所述基板的表面上形成至少一层，所述至少一层包括SiGe; 在第一区域上将杂质注入所述至少一个层中以形成用于所述光学检测器的检测器区域; 蚀刻到第一区域和第二区域中的至少一个层中以在第一和第二区域之间形成脊，所述脊限定光学检测器和光波导; 用具有比SiGe低的折射率的介电材料填充第一和第二区域; 并且在用介电材料填充第一和第二区域之后，去除表面材料以形成平坦化的上表面。