公开(公告)号：WO2011112812A3

公开(公告)日：2011-09-15

申请号：PCT/US2011/027900

申请日：2011-03-10

Applicant: APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

Inventor： GANGULY, Udayan ,  RANISH, Joseph, M. ,  HUNTER, Aaron, M. ,  TANG, Jing ,  OLSEN, Christopher, S. ,  SCOTNEY-CASTLE, Matthew, D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  SWENBERG, Johanes, F. ,  WANG, Anchuan ,  INGLE, Nitin, K. ,  HEMKAR, Manish ,  MARIN, Jose, A.

IPC: H01L21/3065

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：WO2011112802A3

公开(公告)日：2012-01-05

申请号：PCT/US2011027881

申请日：2011-03-10

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

Inventor： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  LIU WEI ,  SWENBERG JOHANES F ,  SUN SHIYU

IPC: H01L21/3065

CPC classification number: H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。 公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：WO2011109266A2

公开(公告)日：2011-09-09

申请号：PCT/US2011026423

申请日：2011-02-28

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  ROGERS MATTHEW SCOTT ,  YOKOTA YOSHITAKA ,  SWENBERG JOHANES S ,  BEVAN MALCOLM J

Inventor： GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  ROGERS MATTHEW SCOTT ,  YOKOTA YOSHITAKA ,  SWENBERG JOHANES S ,  BEVAN MALCOLM J

CPC classification number: H01L21/02247 ,  H01L21/02362 ,  H01L21/28202 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract translation: 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。

公开(公告)号：WO2010147937A3

公开(公告)日：2010-12-23

申请号：PCT/US2010/038604

申请日：2010-06-15

Applicant: APPLIED MATERIALS, INC. ,  SWENBERG, Johanes ,  CHU, David ,  GUARINI, Theresa Kramer ,  CHO, Yonah ,  GANGULY, Udayan ,  DATE, Lucien

Inventor： SWENBERG, Johanes ,  CHU, David ,  GUARINI, Theresa Kramer ,  CHO, Yonah ,  GANGULY, Udayan ,  DATE, Lucien

IPC: H01L21/8247 ,  H01L27/115

Abstract: Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.

公开(公告)号：WO2011109266A3

公开(公告)日：2012-03-01

申请号：PCT/US2011026423

申请日：2011-02-28

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  ROGERS MATTHEW SCOTT ,  YOKOTA YOSHITAKA ,  SWENBERG JOHANES S ,  BEVAN MALCOLM J

Inventor： GANGULY UDAYAN ,  GUARINI THERESA KRAMER ,  ROGERS MATTHEW SCOTT ,  YOKOTA YOSHITAKA ,  SWENBERG JOHANES S ,  BEVAN MALCOLM J

IPC: H01L21/318

CPC classification number: H01L21/02247 ,  H01L21/02362 ,  H01L21/28202 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

Abstract translation: 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。

公开(公告)号：WO2011112812A2

公开(公告)日：2011-09-15

申请号：PCT/US2011027900

申请日：2011-03-10

Applicant: APPLIED MATERIALS INC ,  GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

Inventor： GANGULY UDAYAN ,  RANISH JOSEPH M ,  HUNTER AARON M ,  TANG JING ,  OLSEN CHRISTOPHER S ,  SCOTNEY-CASTLE MATTHEW D ,  NGUYEN VICKY ,  SRINIVASAN SWAMINATHAN ,  SWENBERG JOHANES F ,  WANG ANCHUAN ,  INGLE NITIN K ,  HEMKAR MANISH ,  MARIN JOSE A

IPC: H01L21/3065

CPC classification number: H01L21/67115 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76232 ,  H01L27/11521

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

公开(公告)号：WO2011112802A2

公开(公告)日：2011-09-15

申请号：PCT/US2011/027881

申请日：2011-03-10

Applicant: APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  RANISH, Joseph M. ,  HUNTER, Aaron M. ,  TANG, Jing ,  OLSEN, Christopher S. ,  SCOTNEY-CASTLE, Matthew D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes F. ,  SUN, Shiyu

Inventor： GANGULY, Udayan ,  RANISH, Joseph M. ,  HUNTER, Aaron M. ,  TANG, Jing ,  OLSEN, Christopher S. ,  SCOTNEY-CASTLE, Matthew D. ,  NGUYEN, Vicky ,  SRINIVASAN, Swaminathan ,  LIU, Wei ,  SWENBERG, Johanes F. ,  SUN, Shiyu

IPC: H01L21/3065

CPC classification number: H01L21/76232 ,  H01L21/0223 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/68785 ,  H01L27/11521

Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：WO2011109266A4

公开(公告)日：2011-09-09

申请号：PCT/US2011/026423

申请日：2011-02-28

Applicant: APPLIED MATERIALS, INC. ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  ROGERS, Matthew Scott ,  YOKOTA, Yoshitaka ,  SWENBERG, Johanes S. ,  BEVAN, Malcolm J.

Inventor： GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  ROGERS, Matthew Scott ,  YOKOTA, Yoshitaka ,  SWENBERG, Johanes S. ,  BEVAN, Malcolm J.

IPC: H01L21/318

Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

公开(公告)号：WO2010117703A2

公开(公告)日：2010-10-14

申请号：PCT/US2010/028998

申请日：2010-03-29

Applicant: APPLIED MATERIALS, INC. ,  OLSEN, Christopher S. ,  SWENBERG, Johanes ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  CHO, Yonah

Inventor： OLSEN, Christopher S. ,  SWENBERG, Johanes ,  GANGULY, Udayan ,  GUARINI, Theresa Kramer ,  CHO, Yonah

IPC: H01L21/76 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/3144 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3211 ,  H01L27/11521 ,  Y10S438/911

Abstract: Methods of forming semiconductor devices are provided herein. In some embodiments, a method of forming a semiconductor device may include providing a substrate having an oxide surface and a silicon surface; forming a nitrogen-containing layer on exposed portions of both the oxide and silicon surfaces; and oxidizing the nitrogen-containing layer to selectively remove the nitrogen-containing layer from atop the oxide surface. In some embodiments, an oxide layer is formed atop a remaining portion of the nitrogen-containing layer formed on the silicon feature. In some embodiments, the oxide surface is an exposed surface of a shallow trench isolate region (STI) disposed adjacent to one or more floating gates of a semiconductor device. In some embodiments, the silicon surface is an exposed surface of a silicon or polysilicon floating gate of a semiconductor device.

Abstract translation: 本文提供了形成半导体器件的方法。 在一些实施例中，形成半导体器件的方法可以包括提供具有氧化物表面和硅表面的衬底; 在氧化物和硅表面的暴露部分上形成含氮层; 并氧化含氮层以从氧化物表面顶部选择性地除去含氮层。 在一些实施例中，在形成于硅特征上的含氮层的剩余部分的顶部形成氧化物层。 在一些实施例中，氧化物表面是与半导体器件的一个或多个浮动栅极相邻设置的浅沟槽隔离区域（STI）的暴露表面。 在一些实施例中，硅表面是半导体器件的硅或多晶硅浮置栅极的暴露表面。

公开(公告)号：WO2013046217A3

公开(公告)日：2013-07-04

申请号：PCT/IN2012000411

申请日：2012-06-12

Applicant: INDIAN INST TECHNOLOGY BOMBAY ,  GANGULY UDAYAN ,  LODHA SAURABH ,  BAFNA PRANIL YOGENDRA ,  KARKARE PRATEEK ,  KUMBHARE PANKAJ S ,  SRINIVASAN V S SENTHIL

Inventor： GANGULY UDAYAN ,  LODHA SAURABH ,  BAFNA PRANIL YOGENDRA ,  KARKARE PRATEEK ,  KUMBHARE PANKAJ S ,  SRINIVASAN V S SENTHIL

IPC: G11C16/02

CPC classification number: G11C13/003 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/15 ,  G11C2213/72

Abstract: Selector device for bipolar RRAM is disclosed. This invention relates to high density volatile and nonvolatile memories, and more particularly to selection devices in bipolar resistive random access memory. The present day technology uses positive and negative field on memory device to change resistance states. Various metal oxides used in bipolar RRAM operations display symmetric as well as asymmetric operation. However, there is no selection device which works close to symmetric or even some asymmetric operation. A memory element is proposed for providing high density volatile/non-volatile memory storage which comprises of memory element and bipolar vertical selector device. Further, the selector device is based on punch-through mechanism concept.

Abstract translation: 公开了用于双极RRAM的选择器件。 本发明涉及高密度易失性和非易失性存储器，更具体地涉及双极电阻随机存取存储器中的选择器件。 目前的技术使用存储器上的正负电场来改变电阻状态。 用于双极性RRAM操作的各种金属氧化物显示对称和非对称操作。 然而，没有选择装置接近对称或甚至一些不对称操作。 提出了一种用于提供包括存储器元件和双极垂直选择器装置的高密度易失性/非易失性存储器的存储器元件。 此外，选择器装置基于穿通机构概念。