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    METHOD OF SEPARATING SEMICONDUCTOR DIES
    6.
    发明申请
    METHOD OF SEPARATING SEMICONDUCTOR DIES 审中-公开
    分离半导体芯片的方法

    公开(公告)号：WO2008019377A2

    公开(公告)日：2008-02-14

    申请号：PCT/US2007/075402

    申请日：2007-08-07

    Applicant: SEMI-PHOTONICS CO., LTD. ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHU, Chen-Fu ,  DOAN, Trung Tri

    Inventor： CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHU, Chen-Fu ,  DOAN, Trung Tri

    IPC: H01L21/78

    CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个裸片的方法。 在包含多个裸片的半导体晶片的上表面上，可使用种子金属层来在其上方生长用于处理的硬金属层。 除了停止电镀（EP）材料块存在的地方以外，金属可以镀在这些金属层上方的任何地方。 停止EP材料可以被消除，并且可以在整个剩余结构上方形成阻挡层。 衬底可以被移除，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割和加热后的浸没硬金属应足够坚固以便处理。 磁带可能被添加到晶片，并且可以使用断路器将模具分开。 所得到的结构可以被翻转过来，并且磁带可以被扩展以分离各个裸片。

    METHOD OF SEPARATING SEMICONDUCTOR DIES
    8.
    发明申请
    METHOD OF SEPARATING SEMICONDUCTOR DIES 审中-公开
    分离半导体器件的方法

    公开(公告)号：WO2008019377A3

    公开(公告)日：2008-06-05

    申请号：PCT/US2007075402

    申请日：2007-08-07

    Applicant: SEMI PHOTONICS CO LTD ,  CHU JIUNN-YI ,  CHENG CHAO-CHEN ,  CHU CHEN-FU ,  DOAN TRUNG TRI

    Inventor： CHU JIUNN-YI ,  CHENG CHAO-CHEN ,  CHU CHEN-FU ,  DOAN TRUNG TRI

    IPC: H01L21/30 ,  H01L21/50

    CPC classification number: H01L21/78 ,  H01L33/0079 ,  H01L33/0095

    Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.

    Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个管芯的半导体晶片的上表面上，种子金属层可以用于在其上方生长硬金属层用于处理。 除了存在一块停止电镀（EP）材料之外，金属可以被覆盖在这些金属层之上。 停止EP材料可能被擦除，并且阻挡层可以形成在整个剩余结构之上。 可以去除衬底，并且各个管芯可以具有添加到半导体表面的任何期望的接合焊盘和/或图案化电路。 激光切割加热后的重金属硬度应足够强大。 可以将胶带加入到晶片中，并且可以使用断路器将模具分开。 可以将所得到的结构翻转，并且可以将带扩展以分离各个管芯。

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