公开(公告)号：WO2013071687A1

公开(公告)日：2013-05-23

申请号：PCT/CN2012/001245

申请日：2012-09-06

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD. ,  YEN, Jui-Kang ,  DOAN, Trung Tri

Inventor： YEN, Jui-Kang ,  DOAN, Trung Tri

IPC: H01L33/62 ,  H01L33/52 ,  H01L33/48

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L33/50 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light emitting diode (LED) package includes a substrate and a light emitting diode (LED) die on the substrate configured to emit electromagnetic radiation in a first spectral region. The (LED) package also includes a dielectric layer on the (LED) die and a wavelength conversion member on the dielectric layer configured to convert the electromagnetic radiation in the first spectral region to electromagnetic radiation in a second spectral region. The (LED) package also includes an interconnect comprising a conductive trace on the wavelength conversion member and on the dielectric layer in electrical contact with a die contact on the (LED) die and with a conductor on the substrate, and a transparent dome configured as a lens encapsulating the (LED) die.

Abstract translation: 发光二极管（LED）封装包括衬底和衬底上的发光二极管（LED）裸片，其被配置为在第一光谱区域中发射电磁辐射。 （LED）封装还包括在（LED）管芯上的电介质层和介电层上的波长转换构件，其被配置为将第一光谱区域中的电磁辐射转换成第二光谱区域中的电磁辐射。 （LED）封装还包括一个互连件，其包括波长转换构件上的导电迹线和与（LED）裸片上的裸片接触件和基板上的导体电接触的电介质层上的导电迹线，以及配置为 封装（LED）裸片的透镜。

公开(公告)号：WO2012171331A1

公开(公告)日：2012-12-20

申请号：PCT/CN2012/000820

申请日：2012-06-14

Applicant: SEMILEDS OPTOELECTRONICS CO.,LTD ,  LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

Inventor： LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHU, Jiunn-Yi ,  CHENG, Chao-Chen ,  CHENG, Hao-Chun ,  FAN, Feng-Hsu ,  CHANG, Yuan-Hsiao

IPC: H01L27/15 ,  H01L29/00

CPC classification number: H01L33/38 ,  H01L27/15 ,  H01L33/385 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/4903 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) comprises: a metal substrate(201); an LED stack for emitting light disposed above the metal substrate(201), wherein the LED stack provides a first current path for the LED; and a second current path(402) for the LED different from the first current path. The LED stack comprises a p-type semiconductor layer(110) and an n-type semiconductor layer(106) disposed above the p-type semiconductor layer(110). The LED may have the advantages of current guiding and transient suppression.

Abstract translation: 发光二极管（LED）包括：金属基板（201）; 用于发射设置在所述金属基板（201）上方的光的LED堆叠，其中所述LED堆叠为所述LED提供第一电流路径; 以及用于不同于第一电流路径的LED的第二电流路径（402）。 LED堆叠包括p型半导体层（110）和设置在p型半导体层（110）上方的n型半导体层（106）。 LED可能具有电流引导和瞬态抑制的优点。

公开(公告)号：WO2013075393A1

公开(公告)日：2013-05-30

申请号：PCT/CN2012/001093

申请日：2012-08-16

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD. ,  YEN, Jui-Kang

Inventor： YEN, Jui-Kang

IPC: F21V5/00 ,  H01L33/00 ,  F21Y101/02

CPC classification number: H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A light emitting diode device includes a substrate (1060), one or more light emitting diode chips (1020) on the substrate (1060) configured to emit electromagnetic radiation, and a lens (1030) configured to encapsulate the light emitting diode chips (1020) having a surface (1040) with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction of the electromagnetic radiation and to direct the electromagnetic radiation outward from the lens (1030).

Abstract translation: 一种发光二极管装置，包括：衬底（1060），被配置为发射电磁辐射的衬底上的一个或多个发光二极管芯片（1020）;和被配置为封装发光二极管芯片（1020）的透镜（1030） ）具有具有微粗糙结构的表面（1040）。 微粗糙结构用于改善电磁辐射的光提取并将电磁辐射从透镜（1030）向外引导。

公开(公告)号：WO2011024045A1

公开(公告)日：2011-03-03

申请号：PCT/IB2010/002042

申请日：2010-08-18

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.

Inventor： CHU, Chen Fu

IPC: H01L23/52 ,  H01L23/48 ,  H01L21/44

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/0501 ,  H01L2224/0502 ,  H01L2224/05099 ,  H01L2224/05541 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05599 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A method for fabricating a through interconnect on a semiconductor substrate includes the steps of forming a via on a first side of the substrate part way through the substrate, forming an electrically insulating layer on the first side and in the via, forming an electrically conductive layer at least partially lining the via, forming a first contact on the conductive layer in the via, and thinning the substrate from a second side at least to the insulating layer in the via. The method can also include the step of forming a second contact on a second side of the substrate in electrical contact with the first contact. The method can be performed on a semiconductor wafer to form a wafer scale interconnect component. In addition, the interconnect component can be used to construct semiconductor systems such as a light emitting diode (LED) systems.

Abstract translation: 一种用于在半导体衬底上制造贯通互连的方法包括以下步骤：在衬底的第一侧穿过衬底形成通孔，在第一侧和通孔上形成电绝缘层，形成导电层 至少部分地衬在所述通孔上，在所述通孔中的所述导电层上形成第一接触，以及将所述衬底从所述通孔中的至少绝缘层从第二侧变薄。 该方法还可以包括在与第一接触件电接触的基板的第二侧上形成第二接触的步骤。 该方法可以在半导体晶片上进行以形成晶片尺寸互连部件。 此外，互连部件可用于构造诸如发光二极管（LED）系统的半导体系统。

公开(公告)号：WO2010131090A1

公开(公告)日：2010-11-18

申请号：PCT/IB2010/001058

申请日：2010-05-10

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.

Inventor： YEN, Jui, Kang

IPC: H01L33/00 ,  F21V5/00

CPC classification number: H01L33/54 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2933/0091 ,  H01L2924/00

Abstract: The invention discloses a light emitting diode device with a light extracting rough structure. The device includes a lead frame, one or more light emitting diode chips provided on and electrically connected to the lead frame, and a lens configured to encapsulate the one or more light emitting diode chips. The lens has a surface with a micro-roughness structure. The micro-roughness structure of the lens has a roughness between 0.1 μ m and 50 μ m. The invention also discloses methods for manufacturing a light emitting diode device with a light extracting rough structure.

Abstract translation: 本发明公开了一种具有光提取粗糙结构的发光二极管装置。 该装置包括引线框架，提供在引线框架上并电连接到引线框架的一个或多个发光二极管芯片以及被配置为封装一个或多个发光二极管芯片的透镜。 透镜具有微观粗糙结构的表面。 透镜的微观粗糙度结构的粗糙度在0.1μm和50μm之间。 本发明还公开了具有光提取粗糙结构的发光二极管器件的制造方法。

公开(公告)号：WO2013037189A1

公开(公告)日：2013-03-21

申请号：PCT/CN2012/001252

申请日：2012-09-10

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD. ,  YEN, Jui-Kang ,  DOAN, Trung Tri

Inventor： YEN, Jui-Kang ,  DOAN, Trung Tri

IPC: H01L33/50 ,  F21Y101/02

CPC classification number: H01L33/50 ,  H01L2933/0041

Abstract: A method for fabricating a LED device includes the steps of forming (or providing) a plurality of LED dice (10), forming a plurality of wavelength conversions layers (22), and then evaluating at least one electromagnetic radiation emission characteristic of each LED die (10) and at least one color characteristic of each wavelength conversion layer (22). The method also includes the steps of comparing the evaluated characteristic of each LED die (10) and the evaluated characteristic of each wavelength conversion layer (22) to a database, selecting a LED die (10) and one or more wavelength conversion layers (22) based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer (22) to the selected LED die (10).

Abstract translation: 一种制造LED器件的方法包括以下步骤：形成（或提供）多个LED管芯（10），形成多个波长转换层（22），然后评估每个LED管芯的至少一个电磁辐射发射特性 （10）和每个波长转换层（22）的至少一种颜色特性。 该方法还包括以下步骤：将每个LED管芯（10）的评估特性和每个波长转换层（22）的评估特性与数据库进行比较，选择LED管芯（10）和一个或多个波长转换层 ），然后将所选择的波长转换层（22）附着到所选择的LED管芯（10）上。

公开(公告)号：WO2011018689A1

公开(公告)日：2011-02-17

申请号：PCT/IB2010/001970

申请日：2010-08-10

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.

Inventor： DOAN, Trung Tri ,  TAN, Tien Wei ,  LIU, Wen Huang ,  CHU, Chen Fu ,  CHEN, Yung Wei

IPC: H01L31/12

CPC classification number: H05B33/0815 ,  H01L2224/16225 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H05B33/0842 ,  Y02B20/341 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，衬底上的专用集成电路（ASIC）以及与专用集成电路（ASIC）电连通的衬底上的至少一个发光二极管（LED）。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。此外，多个发光二极管（LED）可以安装在基板上， 并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成系统。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：WO2013097270A1

公开(公告)日：2013-07-04

申请号：PCT/CN2012/001041

申请日：2012-08-03

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD. ,  DOAN, Trung Tri ,  YEN, Jui-Kang

Inventor： DOAN, Trung Tri ,  YEN, Jui-Kang

IPC: F21S2/00

CPC classification number: F21V3/049 ,  F21K9/232 ,  F21K9/64 ,  F21V3/04 ,  F21V5/00 ,  F21Y2115/10

Abstract: Alight emitting diode light bulbs (LLB) bulb (10A) includes a base (12A),a light emitting diode (LED) light source (16A) configured to emit electromagnetic radiation, and a lens/cover (18A) having a light extracting rough surface pattern (20) (LERSP) configured to reduce glare and reflection in the LLB bulb (10A) without light loss. A method for fabricating the LLB bulb (10A) includes the steps of providing the lens/cover (18A), and forming the light extracting rough surface pattern (20) (PERSP) on the lens/cover (18A). The lens/cover (18A) can be fabricated with the light extracting rough surface pattern (20) (LERSP) using a process such as bead blasting, sand blasting, etching (chemical or plasma), or molding.

Abstract translation: 发光二极管灯泡（LLB）灯泡（10A）包括基座（12A），被配置为发射电磁辐射的发光二极管（LED）光源（16A）和具有光提取粗糙度的透镜/盖（18A） 配置为减少LLB灯泡（10A）中的眩光和反射而没有光损失的表面图案（20）（LERSP）。 一种用于制造LLB灯泡（10A）的方法包括以下步骤：提供透镜/盖（18A），并在透镜/盖（18A）上形成提光粗糙表面图案（20SP）（PERSP）。 可以使用诸如珠粒喷砂，喷砂，蚀刻（化学或等离子体）或模塑的工艺，用光提取粗糙表面图案（20）（LERSP）制造透镜/盖（18A）。

公开(公告)号：WO2013086781A1

公开(公告)日：2013-06-20

申请号：PCT/CN2012/001576

申请日：2012-11-23

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.

Inventor： CHU, Jiunn-Yi ,  CHU, Chen-Fu ,  CHENG, Chao-Chen

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/04

CPC classification number: H01L33/06 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.

Abstract translation: 发光二极管（LED）裸片包括具有第一表面和相对的第二表面的第一基底; 在所述第一基板的所述第二表面上的第二基板; 在所述第一基板的所述第一表面上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。

公开(公告)号：WO2013078768A1

公开(公告)日：2013-06-06

申请号：PCT/CN2012/001586

申请日：2012-11-26

Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.

Inventor： DOAN, Trung Tri ,  TAN, Tien Wei ,  LIU, Wen-Huang ,  CHU, Chen-Fu ,  CHEN, Yung Wei

IPC: H01L33/08 ,  H01L33/32

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate that includes a Group-III nitride based material such as GaN, InGaN, AIGaN, AlInGaN or other (Ga, In or AI) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEOs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，衬底上的专用集成电路（ASIC）和衬底上的至少一个发光二极管（LED），其包括III族氮化物基材料如GaN， InGaN，AIGaN，AlInGaN或其他（Ga，In或AI）N基材料。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LEO）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成LED电路。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。