Abstract:
An antenna comprising a photoconductive material (61) and a plurality of spaced apart electrodes (69, 71) provided on said photoconductive material (61), each electrode (69, 71) having at least one facing edge which faces a facing edge of an adjacent electrode, a physical barrier (67) being provided abutting a facing edge of at least one electrode (69, 71), said barrier (67) extending to at least the full height of said facing edge.
Abstract:
Aspects of the present disclosure involve a system comprising a computer-readable storage medium storing at least one program, and a method for rendering three-dimensional virtual objects within real world environments. Virtual rendering of a three-dimensional virtual object can be altered appropriately as a user moves around the object in the real world, and the three-dimensional virtual object can exist similarly for multiple users. Virtual object rendering can be with respect to a reference surface, like e.g. a floor or ground or table, in a real world environment, which reference surface can be selected by a user as part of the virtual object rendering process or by image processing methods.
Abstract:
A laser comprising: a substrate comprising a bulk region and a conducting layer; an active region (11) comprising a quantum cascade structure provided on a first surface of the substrate (12) such that said active region (11) is electrically connected to said conducting layer; first and second contacts (16, 17) being disposed on opposite sides of said active region (11) ; and an active region contact (31) provided to said active region (11) such that a potential may be applied between said active region contact (31) and said first and second contacts (16, 17) to cause said active region (11) to lase.
Abstract:
A semiconductor material with photoconductive properties and a method of the semiconductor, wherein a base material is grown and then annealed post-growth at a temperature of 475 °C or less. It has been found that be annealing at temperatures of 475 °C, or less the carrier lifetime of the material and the resistivity can be optimised so as to obtain semiconductor with useful photoconductive properties.
Abstract:
An emitter for emitting radiation in a first range of frequencies comprising: a photoconductive material (11); and first and second contact elements (12, 13, 14) separated by a photoconducting gap provided by said photoconducting material (11), for applying a bias across said photoconducting gap, wherein at least one of said first and second contact elements (12, 13, 14) comprises a resistive element (14) for restricting current flow between said first and second contact elements in a second range of frequencies lower than the first range of frequencies.