公开(公告)号：WO2013012675A3

公开(公告)日：2013-04-25

申请号：PCT/US2012046452

申请日：2012-07-12

Applicant: APPLIED MATERIALS INC ,  PORTHOUSE KEITH BRIAN ,  LANE JOHN W ,  GREGOR MARIUSCH ,  MERRY NIR ,  RICE MICHAEL R ,  MINKOVICH ALEX ,  LI HONGBIN ,  DZILNO DMITRY A

Inventor： PORTHOUSE KEITH BRIAN ,  LANE JOHN W ,  GREGOR MARIUSCH ,  MERRY NIR ,  RICE MICHAEL R ,  MINKOVICH ALEX ,  LI HONGBIN ,  DZILNO DMITRY A

IPC: H01L21/205 ,  H01L21/02 ,  H01L21/3065

CPC classification number: G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Abstract translation: 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数来预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

公开(公告)号：WO2009152103A3

公开(公告)日：2010-03-11

申请号：PCT/US2009046639

申请日：2009-06-08

Applicant: APPLIED MATERIALS INC ,  LANE JOHN WILLIAM ,  GREGOR MARIUSCH ,  VUKOTIC EMIR

Inventor： LANE JOHN WILLIAM ,  GREGOR MARIUSCH ,  VUKOTIC EMIR

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3065

CPC classification number: F17D1/20 ,  F16L55/02754 ,  F16L55/055 ,  Y10T137/0396 ,  Y10T137/7922

Abstract: A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.

Abstract translation: 提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。 在一个实施例中，压力阻尼装置设置在与衬底处理室流体连通的流体控制组件内的安装基板和控制阀之间。 减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。

公开(公告)号：WO2013012675A2

公开(公告)日：2013-01-24

申请号：PCT/US2012/046452

申请日：2012-07-12

Applicant: APPLIED MATERIALS, INC. ,  PORTHOUSE, Keith, Brian ,  LANE, John, W. ,  GREGOR, Mariusch ,  MERRY, Nir ,  RICE, Michael, R. ,  MINKOVICH, Alex ,  LI, Hongbin ,  DZILNO, Dmitry, A.

Inventor： PORTHOUSE, Keith, Brian ,  LANE, John, W. ,  GREGOR, Mariusch ,  MERRY, Nir ,  RICE, Michael, R. ,  MINKOVICH, Alex ,  LI, Hongbin ,  DZILNO, Dmitry, A.

IPC: H01L21/205 ,  H01L21/3065 ,  H01L21/02

CPC classification number: G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Abstract translation: 这里公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气阀的位置之间的关系; 将所述处理室设定为第一状态，所述第一状态具有所述处理容积中的第一压力和所述处理参数的第一值，其中基于所述预定关系将所述排气阀设定到第一位置以在所述第一值处产生所述第一压力; 当所述处理室从所述第一状态变为具有第二压力和第二处理参数值的第二状态时，确定压力控制分布以控制所述压力; 并且通过在将处理室改变到第二状态的同时改变排气阀的位置来施加压力控制曲线以控制压力。

公开(公告)号：WO2011085064A2

公开(公告)日：2011-07-14

申请号：PCT/US2011020316

申请日：2011-01-06

Applicant: APPLIED MATERIALS INC ,  GREGOR MARIUSCH ,  LANE JOHN

Inventor： GREGOR MARIUSCH ,  LANE JOHN

IPC: H01L21/3065

CPC classification number: F17D3/00 ,  G01F25/003 ,  G01F25/0053 ,  Y10T137/0324 ,  Y10T137/0363 ,  Y10T137/0379 ,  Y10T137/0402 ,  Y10T137/2524 ,  Y10T137/2529

Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气体流动的方法。 该方法通常包括将单个处理气体供应源分成多个独立处理室的输入，使得每个室在均匀处理条件下处理基板。 该方法通常包括使用质量流量控制器作为用于校准流量比率控制器的参考。 可以确定量程校正因子以解释实际流量和通过流量比率控制器的测量流量之间的差异。 量程校正因子可以用于使用在此提供的等式来确定流量控制器的每个通道的经校正的设定点。 此外，流量比控制器的设定点可以使用在此提供的附加等式而与气体无关。

公开(公告)号：WO2011137071A3

公开(公告)日：2012-03-01

申请号：PCT/US2011033780

申请日：2011-04-25

Applicant: APPLIED MATERIALS INC ,  CRUSE JAMES P ,  LANE JOHN W ,  GREGOR MARIUSCH ,  BUCKIUS DUC ,  DARAN BERRIN ,  COBB CORIE LYNN ,  XU MING ,  NGUYEN ANDREW

Inventor： CRUSE JAMES P ,  LANE JOHN W ,  GREGOR MARIUSCH ,  BUCKIUS DUC ,  DARAN BERRIN ,  COBB CORIE LYNN ,  XU MING ,  NGUYEN ANDREW

IPC: H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/67253 ,  F16K37/00 ,  F16K37/0091 ,  G01F25/00 ,  Y10T29/53022 ,  Y10T137/8158 ,  Y10T137/87153 ,  Y10T137/87684 ,  Y10T137/877

Abstract: Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Abstract translation: 本文提供了用于校准衬底处理系统中的多个气流的方法和装置。 在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

公开(公告)号：WO2011137071A2

公开(公告)日：2011-11-03

申请号：PCT/US2011/033780

申请日：2011-04-25

Applicant: APPLIED MATERIALS, INC. ,  CRUSE, James P. ,  LANE, John W. ,  GREGOR, Mariusch ,  BUCKIUS, Duc ,  DARAN, Berrin ,  COBB, Corie Lynn ,  XU, Ming ,  NGUYEN, Andrew

Inventor： CRUSE, James P. ,  LANE, John W. ,  GREGOR, Mariusch ,  BUCKIUS, Duc ,  DARAN, Berrin ,  COBB, Corie Lynn ,  XU, Ming ,  NGUYEN, Andrew

IPC: H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/67253 ,  F16K37/00 ,  F16K37/0091 ,  G01F25/00 ,  Y10T29/53022 ,  Y10T137/8158 ,  Y10T137/87153 ,  Y10T137/87684 ,  Y10T137/877

Abstract: Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Abstract translation: 本文提供了用于校准衬底处理系统中的多个气流的方法和装置。 在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

公开(公告)号：WO2011085064A3

公开(公告)日：2011-07-14

申请号：PCT/US2011/020316

申请日：2011-01-06

Applicant: APPLIED MATERIALS, INC. ,  GREGOR, Mariusch ,  LANE, John

Inventor： GREGOR, Mariusch ,  LANE, John

IPC: H01L21/3065

Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

公开(公告)号：WO2009152103A2

公开(公告)日：2009-12-17

申请号：PCT/US2009/046639

申请日：2009-06-08

Applicant: APPLIED MATERIALS, INC. ,  LANE, John, William ,  GREGOR, Mariusch ,  VUKOTIC, Emir

Inventor： LANE, John, William ,  GREGOR, Mariusch ,  VUKOTIC, Emir

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/20

CPC classification number: F17D1/20 ,  F16L55/02754 ,  F16L55/055 ,  Y10T137/0396 ,  Y10T137/7922

Abstract: A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.

Abstract translation: 提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。 在一个实施例中，减压装置设置在流体控制组件内的安装基板和控制阀之间，该流体控制组件与基板处理室流体连通。 减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。