Abstract:
A method of laser-based material processing comprising: generating a laser beam having a narrow emission spectrum characterized by a full width at half maximum intensity of less than about 1 nanometer during a first time interval; controllably modifying a characteristic of the laser beam during the time interval to produce one or more pulses without substantially broadening the emission spectrum; and delivering and focusing at least one of the one or more pulses onto at least one target structure during motion of the at least one structure relative to the at least one pulse.
Abstract:
In a system for severing conductive links by laser irradiation to repair electronic devices, multiple laser beams are deflected at high-speed to target selected links for processing by positioning laser spots in a two dimensional pattern during relative motion of a substrate and a beam delivery system. As link targeting flexibility is increased, selection may be required from a large number of addressable link pairs. Various embodiments advantageously use beam deflection and beam splitting to improve memory repair processing rates.
Abstract:
A laser-based method and system for selectively processing a multi-material device having a target link structure formed on a substrate while avoiding undesirable change to an adjacent link structure also formed on the substrate are disclosed. The method includes applying at least one focused laser pulse having a wavelength into a spot. The at least one focused laser pulse has an energy density over the spot sufficient to completely process the target link structure while avoiding undesirable change to the adjacent link structure, the substrate and any layers between the substrate and the link structures. The target link structure and the adjacent structure may have a pitch of about 2.0 microns or less.
Abstract:
In a system for severing conductive links by laser irradiation to repair electronic devices, multiple laser beams are deflected at high-speed to target selected links for processing by positioning laser spots in a two dimensional pattern during relative motion of a substrate and a beam delivery system. As link targeting flexibility is increased, selection may be required from a large number of addressable link pairs. Various embodiments advantageously use beam deflection and beam splitting to improve memory repair processing rates.
Abstract:
The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.
Abstract:
The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.
Abstract:
A laser-based method and system for selectively processing a multi-material device having a target link structure formed on a substrate while avoiding undesirable change to an adjacent link structure also formed on the substrate are disclosed. The method includes applying at least one focused laser pulse having a wavelength into a spot. The at least one focused laser pulse has an energy density over the spot sufficient to completely process the target link structure while avoiding undesirable change to the adjacent link structure, the substrate and any layers between the substrate and the link structures. The target link structure and the adjacent structure may have a pitch of about 2.0 microns or less.
Abstract:
A method and system for adaptively controlling a laser-based material processing process are provided. The system includes sensing equipment to measure a process variable or condition of at least one of a laser-based material processing system and a workpiece processed by the material processing system and to provide a corresponding measurement signal. The control system also includes a signal processor for processing the measurement signal to obtain a processed signal which initiates, at least semi-automatically, an action associated with at least one of the material processing system and the workpiece. A method and system for at least semi-automatically qualifying a laser-based material processing system which delivers laser energy to locations on or adjacent a plurality of microstructures formed on a workpiece to at least partially process the microstructures are also provided.
Abstract:
A method and system for adaptively controlling a laser-based material processing process are provided. The system includes sensing equipment to measure a process variable or condition of at least one of a laser-based material processing system and a workpiece processed by the material processing system and to provide a corresponding measurement signal. The control system also includes a signal processor for processing the measurement signal to obtain a processed signal which initiates, at least semi-automatically, an action associated with at least one of the material processing system and the workpiece. A method and system for at least semi-automatically qualifying a laser-based material processing system which delivers laser energy to locations on or adjacent a plurality of microstructures formed on a workpiece to at least partially process the microstructures are also provided.