公开(公告)号：WO2004090980A2

公开(公告)日：2004-10-21

申请号：PCT/GB2004/001577

申请日：2004-04-08

Applicant: AOTI OPERATING COMPANY, INC. ,  HAMMOND, Michael, John ,  KAISER, Gregory, Allyn ,  SMITH, Nigel, Peter

Inventor： HAMMOND, Michael, John ,  KAISER, Gregory, Allyn ,  SMITH, Nigel, Peter

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with a first layer and a second mark portion associated with a second layer, wherein the first and second mark portions comprise geometrically similar periodic arrays of mark structures laid down such that the mark portions have patterns exhibiting rotational symmetry with the axes coincident when the mark is in correct alignment whereby the first mark portion overlays the second mark portion when in correct alignment to create an overlap region, but wherein the periodic array of the first mark portion is systematically shifted relative to the periodic array of the second mark portion to generate a Moiré fringe effect in at least a part of the overlap region. A method of marking and a method of determining overlay error are also described.

Abstract translation: 用于确定集成电路结构的两层或更多层之间的相对位置的覆盖计量标记，其包括与第一层相关联的第一标记部分和与第二层相关联的第二标记部分，其中所述第一和第二标记部分包括几何相似 标记结构的周期性阵列被布置成使得当标记正确对准时，标记部分具有表现出旋转对称性的图案，其中当正确对准时第一标记部分覆盖第二标记部分以产生重叠区域，但是其中 第一标记部分的周期性阵列相对于第二标记部分的周期性阵列被系统地移位，以在重叠区域的至少一部分中产生莫尔条纹效应。 还描述了一种标记方法和确定重叠误差的方法。

公开(公告)号：WO2004090979A2

公开(公告)日：2004-10-21

申请号：PCT/GB2004/001536

申请日：2004-04-08

Applicant: AOTI OPERATING COMPANY, INC ,  SMITH, Nigel, Peter ,  HAMMOND, Michael, John

Inventor： SMITH, Nigel, Peter ,  HAMMOND, Michael, John

IPC: H01L23/544

CPC classification number: G03F9/7076

Abstract: An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with and in particular developed on a first layer and a second mark portion associated with and in particular developed on a second layer, wherein the first and second mark portions together constitute, when the mark is properly aligned, at least one pair of test zones, each test zone comprising a first mark section formed as part of the first mark portion and a second mark section formed as part of the second mark portion each comprising a plurality of elongate rectangular mark structures in parallel array adjacently disposed to form the said test zone such that the mark structures in each test zone are in alignment in a first direction within the test zone but are substantially at 90° with respect to the mark structures of at least one other test zone in alignment in a second direction, and wherein the test zones making up the or each pair are laterally displaced relative to each other along one of the said directions. A method of marking and a method of determining overlay error are also described.

Abstract translation: 用于确定集成电路结构的两层或更多层之间的相对位置的覆盖计量标记，其包括与第一层相关联并且特别地在第一层上开发的第一标记部分和与第二层相关联并且特别地在第二层上开发的第二标记部分， 其中当所述标记被适当对准时，所述第一和第二标记部分一起构成至少一对测试区域，每个测试区域包括形成为所述第一标记部分的一部分的第一标记部分和形成为所述第一标记部分的一部分的第二标记部分 所述第二标记部分每个包括多个平行排列的细长矩形标记结构，以相邻设置以形成所述测试区域，使得每个测试区域中的标记结构在测试区域内沿第一方向对齐，但基本上为90° 相对于在第二方向上对准的至少另一个测试区的标记结构，并且其中测试区mak 所述一对或每对中的一对沿着所述方向中的一个相对于彼此横向移位。 还描述了一种标记方法和确定重叠误差的方法。

公开(公告)号：WO2005029152A1

公开(公告)日：2005-03-31

申请号：PCT/GB2004/003969

申请日：2004-09-20

Applicant: AOTI OPERATING COMPANY, INC ,  HAMMOND, Michael, John ,  REYNOLDS, Gregory, Thomas

Inventor： HAMMOND, Michael, John ,  REYNOLDS, Gregory, Thomas

IPC: G02B21/24

CPC classification number: G02B21/247 ,  G02B21/244

Abstract: A method of automatically focusing a microscope having a light source, an objective lens or lens system, a means to direct incident light through the objective lens or lens system to be reflected by the object, an aperture to limit the spatial extent of the incident light and serve as an illumination pupil, a means to direct at least some of the reflected light to an imaging system, and an imaging system to image the reflected light so directed is described. In accordance with the invention a beam of light is directed from a light source through an objective of the microscope system to an object whereby light is reflected from the surface thereof; reflected light is collected and directed to an imaging system, wherein the incident beam of light is limited in spatial extent by imaging an aperture to form an illumination pupil, the centroid of illumination of the illumination pupil is aligned with the incident optical axis of the instrument, and reflected light is projected to the imaging system comprising at least one pair of images from eccentric sections of an imaging pupil displaced from the optical axis in opposite directions, and wherein the separation of the images thereby produced is determined to provide an indication of the object distance. A focusing system implementing the method and a microscope fitted with such a system are also described.

Abstract translation: 一种自动聚焦具有光源，物镜或透镜系统的显微镜的方法，用于将入射光通过物镜或透镜系统引导以被物体反射的装置，用于限制入射光的空间范围的孔 并且用作照明光瞳，将至少一些反射光引导到成像系统的装置，以及用于对如此引导的反射光进行成像的成像系统。 根据本发明，光束从光源通过显微镜系统的目标被引导到物体，由此光从其表面反射; 反射光被收集并且被引导到成像系统，其中通过对孔径进行成像以形成照明光瞳，入射光束在空间范围内受到限制，照明光瞳的照明质心与仪器的入射光轴对准 并且将反射光投射到成像系统，该成像系统包括从相对方向从光轴移位的成像光瞳的偏心部分的至少一对图像，并且其中确定由此产生的图像的分离以提供 物距。 还描述了实现该方法的聚焦系统和配备有这种系统的显微镜。

公开(公告)号：WO1997022900A1

公开(公告)日：1997-06-26

申请号：PCT/GB1996002920

申请日：1996-11-28

Applicant: BIO-RAD MICROMEASUREMENTS LIMITED ,  SMOUT, Andrew, Michael, Christian ,  KEENS, Andrew, Peter ,  HAMMOND, Michael, John

Inventor： BIO-RAD MICROMEASUREMENTS LIMITED

IPC: G02B07/32

CPC classification number: G03F7/70633 ,  G02B7/32 ,  G03F7/70641 ,  G03F9/70 ,  G11B7/0912

Abstract: The invention relates to a method and means for automatic focusing and has particular use in semiconductor metrology. The invention concerns the use of two beam sources and a single detector. One of said beam sources is projected forwardly of an image plane of an object to be viewed and the second of said beam sources is projected rearwardly of an image plane of an object to be viewed. The reflections from each of said beams are then passed through a vignetting aperture and onto a single focus detector. Using this arrangement it is possible to efficiently and accurately determine the point of focus.

Abstract translation: 本发明涉及一种用于自动聚焦的方法和装置，并且在半导体计量学中具有特别的用途。 本发明涉及使用两个光束源和单个检测器。 所述光束源中的一个投影到要观看的物体的像平面的前方，并且所述光束源中的第二光源从待观看的物体的像平面向后突出。 然后将来自每个所述光束的反射通过渐晕光阑并传送到单个焦点检测器上。 使用这种布置，可以有效和准确地确定焦点。

公开(公告)号：WO1997009649A1

公开(公告)日：1997-03-13

申请号：PCT/GB1996002141

申请日：1996-09-02

Applicant: BIO-RAD MICROMEASUREMENTS LIMITED ,  HAMMOND, Michael, John ,  BLAND, Nigel, Stuart

Inventor： BIO-RAD MICROMEASUREMENTS LIMITED

IPC: G02B07/00

CPC classification number: G02B21/00 ,  G02B7/00 ,  G02B21/362

Abstract: The invention relates to a novel housing for an optical instrument such as a microscope. The housing is provided with a number of channel means which are positioned having regard to the optical axis of the instrument and adapted to accommodate a plurality of optical components so as to facilitate the alignment of same.

Abstract translation: 本发明涉及一种用于诸如显微镜的光学仪器的新型外壳。 壳体设置有多个通道装置，其被定位成考虑到仪器的光轴并且适于容纳多个光学部件，以便于其对准。

公开(公告)号：WO2006093800A9

公开(公告)日：2007-03-01

申请号：PCT/US2006006449

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECH INC ,  RAYMOND CHRIS ,  HUMMEL STEVE ,  HAMMOND MICHAEL JOHN

Inventor： RAYMOND CHRIS ,  HUMMEL STEVE ,  HAMMOND MICHAEL JOHN

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited t semiconductor applications and can be applied equally well in other applications. The scatterometer contains a positioning system and an auto-focus system.

Abstract translation: 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度和许多其它参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以在其它应用中同样适用。 散射仪包含定位系统和自动对焦系统。

公开(公告)号：WO2006091913A1

公开(公告)日：2006-08-31

申请号：PCT/US2006/006775

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECHNOLOGIES, INC. ,  RAYMOND, Chris ,  HUMMEL, Steve ,  HAMMOND, Michael, John

Inventor： RAYMOND, Chris ,  HUMMEL, Steve ,  HAMMOND, Michael, John

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The sensitivity of single pixels of the camera on changes in a measured parameter is modelled and only pixels with a high sensitivity are considered for the measurement.

Abstract translation: 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度和许多其它参数。 对相机的单个像素对测量参数的变化的敏感度被建模，并且仅考虑具有高灵敏度的像素用于测量。

公开(公告)号：WO2004090980A3

公开(公告)日：2005-01-20

申请号：PCT/GB2004001577

申请日：2004-04-08

Applicant: AOTI OPERATING CO INC ,  HAMMOND MICHAEL JOHN ,  KAISER GREGORY ALLYN ,  SMITH NIGEL PETER

Inventor： HAMMOND MICHAEL JOHN ,  KAISER GREGORY ALLYN ,  SMITH NIGEL PETER

IPC: H01L23/544

CPC classification number: H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An overlay metrology mark for determining the relative position between two or more layers of an integrated circuit structure comprising a first mark portion associated with a first layer and a second mark portion associated with a second layer, wherein the first and second mark portions comprise geometrically similar periodic arrays of mark structures laid down such that the mark portions have patterns exhibiting rotational symmetry with the axes coincident when the mark is in correct alignment whereby the first mark portion overlays the second mark portion when in correct alignment to create an overlap region, but wherein the periodic array of the first mark portion is systematically shifted relative to the periodic array of the second mark portion to generate a Moiré fringe effect in at least a part of the overlap region. A method of marking and a method of determining overlay error are also described.

Abstract translation: 用于确定集成电路结构的两层或更多层之间的相对位置的覆盖计量标记，其包括与第一层相关联的第一标记部分和与第二层相关联的第二标记部分，其中所述第一和第二标记部分包括几何相似 标记结构的周期性阵列被布置成使得当标记正确对准时，标记部分具有表现出旋转对称性的图案，其中当正确对准时第一标记部分覆盖第二标记部分以产生重叠区域，但是其中 第一标记部分的周期性阵列相对于第二标记部分的周期性阵列被系统地移位，以在重叠区域的至少一部分中产生莫尔条纹效应。 还描述了一种标记方法和确定重叠误差的方法。

公开(公告)号：WO2006093800A1

公开(公告)日：2006-09-08

申请号：PCT/US2006/006449

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECHNOLOGIES, INC. ,  RAYMOND, Chris ,  HUMMEL, Steve ,  HAMMOND, Michael, John

Inventor： RAYMOND, Chris ,  HUMMEL, Steve ,  HAMMOND, Michael, John

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited t semiconductor applications and can be applied equally well in other applications. The scatterometer contains a positioning system and an auto-focus system.

Abstract translation: 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个具体实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度和许多其它参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以在其它应用中同样适用。 散射仪包含定位系统和自动对焦系统。

公开(公告)号：WO2006091840A2

公开(公告)日：2006-08-31

申请号：PCT/US2006/006643

申请日：2006-02-24

Applicant: ACCENT OPTICAL TECHNOLOGIES, INC. ,  RAYMOND, Chris ,  HUMEL, Steve ,  HAMMOND, Michael, John

Inventor： RAYMOND, Chris ,  HUMEL, Steve ,  HAMMOND, Michael, John

IPC: G01B11/06 ,  G01N21/47

CPC classification number: G01B11/0616 ,  G01B11/24 ,  G01B11/30 ,  G01N21/21 ,  G01N21/274 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  G01N23/2251 ,  G01N2021/4792 ,  G03F7/70625

Abstract: Scatterometers and methods of using scatterometry to determine several parameters of periodic microstructures, pseudo-periodic structures, and other very small structures having features sizes as small as 100 nm or less. Several specific embodiments of the present invention are particularly useful in the semiconductor industry to determine the width, depth, line edge roughness, wall angle, film thickness, and many other parameters of the features formed in microprocessors, memory devices, and other semiconductor devices. The scatterometers and methods of the invention, however, are not limited to semiconductor applications and can be applied equally well in other applications.

Abstract translation: 散射计和使用散射测定法确定周期性微结构，伪周期结构以及特征尺寸小至100nm或更小的其它非常小的结构的几个参数的方法。 本发明的几个特定实施例在半导体工业中特别有用，以确定在微处理器，存储器件和其它半导体器件中形成的特征的宽度，深度，线边缘粗糙度，壁角度，膜厚度以及许多其它参数。 然而，本发明的散射仪和方法不限于半导体应用，并且可以在其它应用中同样适用。