公开(公告)号：WO2009073371A2

公开(公告)日：2009-06-11

申请号：PCT/US2008/084124

申请日：2008-11-20

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  SUN, Yunlong ,  HARRIS, Richard S.

Inventor： SUN, Yunlong ,  HARRIS, Richard S.

IPC: H01S3/10 ,  H01L21/30

CPC classification number: B23K26/0624 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.

Abstract translation: 用于处理集成电路中的导电链路的系统和方法使用具有不同脉冲宽度的一系列激光脉冲来去除目标结构的不同部分，而不会基本上损坏导电链路下方的材料。 在一个实施例中，超快激光脉冲或超快激光脉冲束去除了目标区域中的覆盖钝化层和链接材料的第一部分。 然后，纳秒激光脉冲移除链路材料的第二部分以切断集成电路中的两个节点之间的电连接。 纳秒激光脉冲被配置为减少或消除对下面的材料的损坏。

公开(公告)号：WO2005016586A3

公开(公告)日：2006-02-23

申请号：PCT/US2004026977

申请日：2004-08-18

Applicant: ELECTRO SCIENT IND INC ,  SUN YUNLONG ,  HARRIS RICHARD S ,  LO HO WAI ,  BAIRD BRIAN W ,  JOHNSON JAY CHRISTOPHER

Inventor： SUN YUNLONG ,  HARRIS RICHARD S ,  LO HO WAI ,  BAIRD BRIAN W ,  JOHNSON JAY CHRISTOPHER

IPC: B23K20060101 ,  B23K26/06 ,  B23K26/38 ,  H01S20060101 ,  H04J14/02 ,  B23K26/00

CPC classification number: H01L23/5258 ,  B23K26/0613 ,  B23K26/0622 ,  B23K2201/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.

Abstract translation: 具有特别定制的时间功率特性的激光脉冲，而不是传统的时间形状或基本上正方形的形状，切断了IC连接。 特别定制的激光脉冲优选地在激光脉冲的开始处具有过冲，或者在激光脉冲的持续时间内具有尖峰​​。 尖峰的定时优先设置在链路被大部分去除的时间之前。 特别定制的激光脉冲功率轮廓允许使用更宽的激光脉冲能量范围和更短的激光波长（例如绿色和紫外线）来切断连接，而不会对基板和钝化结构材料的任何一侧和底层 链接。

公开(公告)号：WO2006009818A2

公开(公告)日：2006-01-26

申请号：PCT/US2005/021406

申请日：2005-06-16

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  BRULAND, Kelly J. ,  LO, Ho Wai ,  BAIRD, Brian W. ,  EVANS, Frank G. ,  HARRIS, Richard S. ,  SUN, Yunlong ,  SWARINGEN, Stephen N.

Inventor： BRULAND, Kelly J. ,  LO, Ho Wai ,  BAIRD, Brian W. ,  EVANS, Frank G. ,  HARRIS, Richard S. ,  SUN, Yunlong ,  SWARINGEN, Stephen N.

IPC: H01L21/00 ,  H01L21/302 ,  H01L21/26 ,  H01L21/84 ,  H01L21/461 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC classification number: B23K26/067 ,  B23K26/0676 ,  B23K26/0853 ,  B23K2201/40 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C29/02 ,  G11C29/027 ,  H01L21/268 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N ≥ 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.

Abstract translation: 方法和系统使用多个激光束在半导体衬底（740）上或内部处理导电链路。 例如，一种利用N系列激光脉冲获得吞吐量优点的方法，其中N = 2。所述链路被布置成沿大致长度方向延伸的多个基本平行的行。 N系列激光脉冲沿着N个相应的波束轴传播，直到在所选择的链路上入射。 所产生的激光斑点的图案可以是N个不同行中的链接，在相同行中的不同链接上，或者在同一链接上，部分地或完全重叠。 所得到的激光点可以在行的长度方向上彼此偏移，或者在与行的长度方向垂直的方向上彼此偏移，或者两者偏离。

公开(公告)号：WO2002060633A1

公开(公告)日：2002-08-08

申请号：PCT/US2002/003006

申请日：2002-01-31

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  SWENSON, Edward, J. ,  HARRIS, Richard, S. ,  SUN, Yunlong

Inventor： SWENSON, Edward, J. ,  HARRIS, Richard, S. ,  SUN, Yunlong

IPC: B23K26/00

CPC classification number: H01C17/242 ,  B23K26/073

Abstract: A uniform laser spot, such as from an imaged shaped Gaussian output (118) or a clipped Gaussian spot, that is less than 20 @m in diameter can be employed for both thin and thick film resistor trimming to substantially reduce microcracking. These spots can be generated in an ablative, nonthermal, UV laser wavelength to reduce the HAZ and/or shift in TCR.

Abstract translation: 可以采用均匀的激光光斑，例如从成像高斯输出（118）或截止的高斯光点到直径小于20μm的薄膜电阻器修整，以显着减少微裂纹。 这些斑点可以以烧蚀，非热的UV激光波长产生，以减少HAZ和/或TCR中的移位。

公开(公告)号：WO1998031049A1

公开(公告)日：1998-07-16

申请号：PCT/US1997019533

申请日：1997-10-29

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  SWENSON, Edward, J. ,  SUN, Yunlong ,  HARRIS, Richard, S.

Inventor： ELECTRO SCIENTIFIC INDUSTRIES, INC.

IPC: H01L21/768

CPC classification number: H01L21/76894

Abstract: The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresit layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.

Abstract translation: 本发明提供了一种方法和系统，用于利用单独定向的激光输出脉冲（74,94）将多个目标位置（150）的抗蚀剂材料照射在一个或多个IC芯片（12）上。 在一个实施例中，包括一个或多个蚀刻目标（104,106）的IC（12），例如导电连接（72,92），涂覆有光刻胶材料的蚀刻保护层（90）。 然后，将位置数据直接引导到光致抗蚀剂材料上的多个位置（150），选择用于曝光光致抗蚀剂材料的预定参数的各个激光输出脉冲（94）。 因为光刻胶的曝光需要比连接吹塑更少的能量，所以可以采用低功率UV激光器（120），而较短的波长允许更小的实际激光输出光斑尺寸（98）。 因为非烧蚀过程不会产生碎屑，所以可将光学部件（148）置于10mm蚀刻保护层（90）内，以将激光输出脉冲（94）聚焦到小于激光波长的两倍的光斑尺寸 输出（140）。 因此，该实施例的优点允许微电路制造商降低电路元件（14）之间的间距（28）。 在光致发光层（90）显影之后，可蚀刻可访问蚀刻靶（92）以修复或重新配置IC器件。 在另一个实施例中，可以采用略高的UV功率激光输出脉冲（74）来消融蚀刻保护抗蚀剂层（70），因此可以利用任何类型的蚀刻保护涂层，例如非光敏抗蚀剂材料，具有显着的制造和成本优点。 该可访问蚀刻目标（60,62）的蚀刻遵循该过程。

公开(公告)号：WO2007140144A2

公开(公告)日：2007-12-06

申请号：PCT/US2007/069217

申请日：2007-05-18

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  HARRIS, Richard S. ,  LO, Ho W.

Inventor： HARRIS, Richard S. ,  LO, Ho W.

CPC classification number: H01L21/78 ,  B23K26/04 ,  B23K26/40 ,  B23K2203/50 ,  B28D5/0011 ,  H01L21/67092

Abstract: Systems and methods for scribing a semiconductor wafer (410) with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer (410) is scribed from a back side (430) thereof. In one embodiment, the back side (430) of the wafer (410) is scribed following a back side grinding process but prior to removal of back side grinding tape (426). Thus, debris generated from the scribing process is prevented from being deposited on a top surface (412) of the wafer (410). To determine the location of dicing lanes or streets (424) relative to the back side (430) of the wafer (410), the top (412) side of the wafer (410) is illuminated with a light (434) configured to pass through the grinding tape (426) and the wafer (410). The light (434) is detected from the back side (430) of the wafer (410), and the streets are mapped relative to the back side (430). The back side (430) of the wafer (410) is then cut with a saw (444) or laser.

Abstract translation: 用于划线半导体晶片（410）的系统和方法，所述半导体晶片（410）具有减少的或没有损坏或碎片到由划刻过程引起的单个集成电路上或之上。 半导体晶片（410）从其背面（430）刻划。 在一个实施例中，晶片（410）的背面（430）在后侧研磨过程之后但在去除后侧研磨带（426）之前进行划线。 因此，防止从划刻过程产生的碎屑沉积在晶片（410）的顶表面（412）上。 为了确定相对于晶片（410）的背面（430）的切割通道或街道（424）的位置，晶片410的顶部（412）侧被配置成通过的光（434）照射 通过研磨带（426）和晶片（410）。 从晶片（410）的背面（430）检测光（434），并且相对于背面（430）映射街道。 然后用锯（444）或激光切割晶片（410）的后侧（430）。

公开(公告)号：WO2006009818A3

公开(公告)日：2007-03-01

申请号：PCT/US2005021406

申请日：2005-06-16

Applicant: ELECTRO SCIENT IND INC ,  BRULAND KELLY J ,  LO HO WAI ,  BAIRD BRIAN W ,  EVANS FRANK G ,  HARRIS RICHARD S ,  SUN YUNLONG ,  SWARINGEN STEPHEN N

Inventor： BRULAND KELLY J ,  LO HO WAI ,  BAIRD BRIAN W ,  EVANS FRANK G ,  HARRIS RICHARD S ,  SUN YUNLONG ,  SWARINGEN STEPHEN N

IPC: H01L21/26

CPC classification number: B23K26/067 ,  B23K26/0676 ,  B23K26/0853 ,  B23K2201/40 ,  G11C17/143 ,  G11C17/16 ,  G11C17/18 ,  G11C29/02 ,  G11C29/027 ,  H01L21/268 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N = 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.

Abstract translation: 方法和系统使用多个激光束在半导体衬底（740）上或内部处理导电链路。 例如，一种利用N系列激光脉冲获得吞吐量优点的方法，其中N = 2。所述链路被布置成沿大致长度方向延伸的多个基本平行的行。 N系列激光脉冲沿着N个相应的波束轴传播，直到在所选择的链路上入射。 所产生的激光斑点的图案可以是N个不同行中的链接，在相同行中的不同链接上，或者在同一链接上，部分地或完全重叠。 所得到的激光点可以在行的长度方向上彼此偏移，或者在与行的长度方向垂直的方向上彼此偏移，或者两者偏离。

公开(公告)号：WO2006062766A3

公开(公告)日：2006-10-12

申请号：PCT/US2005043112

申请日：2005-11-29

Applicant: ELECTRO SCIENT IND INC ,  CUTLER DONALD R ,  BAIRD BRIAN W ,  HARRIS RICHARD S ,  HEMENWAY DAVID M ,  LO HO WAI ,  NILSEN BRADY E ,  OSAKO YASU ,  SUN LEI ,  SUN YUNLONG ,  UNRATH MARK A

Inventor： CUTLER DONALD R ,  BAIRD BRIAN W ,  HARRIS RICHARD S ,  HEMENWAY DAVID M ,  LO HO WAI ,  NILSEN BRADY E ,  OSAKO YASU ,  SUN LEI ,  SUN YUNLONG ,  UNRATH MARK A

IPC: H01L21/26

CPC classification number: B23K26/0673 ,  B23K26/0622 ,  B23K26/067 ,  B23K26/082

Abstract: A laser beam switching system (50) employs a laser (52) coupled to a beam switching device (58) that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head (60) is directing the laser beam to process a workpiece target location, the second beam positioning head (62) is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs. When RF is applied to the first AOM (72), the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM (74), the laser beam is diffracted toward the second beam positioning head. A workpiece processing system (120) employs a common modular imaged optics assembly (122) and an optional variable beam expander (94) for optically processing multiple laser beams.

Abstract translation: 激光束切换系统（50）采用耦合到光束切换装置（58）的激光器（52），其使激光束在第一和第二光束定位头之间切换，使得当第一光束定位头（60）指向 激光束处理工件目标位置，第二光束定位头（62）移动到另一个目标位置，反之亦然。 优选的光束切换装置包括第一和第二AOM。 当RF施加到第一AOM（72）时，激光束朝向第一光束定位头衍射，并且当RF施加到第二AOM（74）时，激光束被朝向第二光束定位头衍射。 工件处理系统（120）采用公共模块化成像光学组件（122）和用于光学处理多个激光束的可选可变光束扩展器（94）。

公开(公告)号：WO2005043699A2

公开(公告)日：2005-05-12

申请号：PCT/US2004/034903

申请日：2004-10-20

Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC. ,  SUN, Yunlong ,  JINJIAO, Liu ,  HARRIS, Richard, S. ,  SUBRAHMANYAN, Pradeep ,  HAINSEY, Robert, F. ,  LU, Weixiong

Inventor： SUN, Yunlong ,  JINJIAO, Liu ,  HARRIS, Richard, S. ,  SUBRAHMANYAN, Pradeep ,  HAINSEY, Robert, F. ,  LU, Weixiong

IPC: H01S

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/382 ,  B23K26/389 ,  B23K26/40 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/42 ,  B23K2203/50 ,  B23K2203/52 ,  B23K2203/56 ,  H05K3/0038 ,  H05K2203/108 ,  H05K2203/1105

Abstract: A method and laser system effect rapid removal of material from a workpiece (20) by applying heating energy in the form of a light beam (28) to a target location (16) on the workpiece to elevate its temperature while maintaining its dimensional stability. When the target portion of the workpiece is heated, a laser beam (12) is directed for incidence on the heated target location. The laser beam preferably has a processing laser output that is appropriate to effect removal of the target material from the workpiece. The combined incidence of the processing laser output and the heating energy on the target location enables the processing laser output to remove a portion of the target material at a material removal rate that is higher than the material removal rate achievable when the target material is not heated.

Abstract translation: 一种方法和激光系统通过将光束（28）形式的加热能量施加到工件上的目标位置（16）来快速地从工件（20）上移除材料，以提高其温度同时保持其尺寸稳定性。 当工件的目标部分被加热时，激光束（12）被引导以被加热到目标位置。 激光束优选地具有适合于从工件去除目标材料的处理激光输出。 处理激光输出和加热能量在目标位置的组合发生率使得处理激光输出能够以高于目标材料不加热时可实现的材料去除速率的材料去除速率去除目标材料的一部分 。

公开(公告)号：WO03052890B1

公开(公告)日：2003-09-04

申请号：PCT/US0240410

申请日：2002-12-17

Applicant: ELECTRO SCIENT IND INC ,  SUN YUNLONG ,  SWENSON EDWARD J ,  HARRIS RICHARD S

Inventor： SUN YUNLONG ,  SWENSON EDWARD J ,  HARRIS RICHARD S

IPC: B23K26/00 ,  B23K26/06 ,  B23K26/067 ,  B23K101/38 ,  G11C17/14 ,  H01L21/82 ,  H01L21/8242 ,  H01L23/525 ,  H01L27/10 ,  H01L27/108 ,  H01S3/00 ,  H01S3/10 ,  H01S3/082

CPC classification number: H01S3/0057 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/0624 ,  B23K26/067 ,  G11C17/14 ,  G11C17/143 ,  H01L23/5258 ,  H01L2924/0002 ,  H01S5/4012 ,  H01L2924/00

Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 500 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.

Abstract translation: 使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。 组（50）的持续时间优选短于500ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。 传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。 可以使用传统的IR波长或它们的谐波。