公开(公告)号：WO2005067547A2

公开(公告)日：2005-07-28

申请号：PCT/US2005001415

申请日：2005-01-14

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  CHOI HEON-JIN ,  LEE SANG-KWON ,  HE RONGRUI ,  ZHANG YANGFENG ,  KUYKENDAL TEVYE ,  PAUZAUSKIE PETER

Inventor： YANG PEIDONG ,  CHOI HEON-JIN ,  LEE SANG-KWON ,  HE RONGRUI ,  ZHANG YANGFENG ,  KUYKENDAL TEVYE ,  PAUZAUSKIE PETER

IPC: H01L33/18

CPC classification number: C01B21/0602 ,  B82Y25/00 ,  B82Y30/00 ,  C01B21/0632 ,  C01P2002/01 ,  C01P2002/54 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/16 ,  C01P2006/40 ,  C01P2006/42 ,  H01L33/18 ,  Y10S438/931 ,  Y10S977/762

Abstract: A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ~ 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

Abstract translation: 公开了一种用于通过提供催化剂涂覆的基底并使基底的至少一部分经受半导体制造稀磁半导体（DMS）纳米线的方法，以及通过基于氯化物的蒸汽输运的掺杂剂来合成纳米线。 使用这种新型的基于氯化物的化学气相传输方法，合成了单晶稀释磁半导体纳米线Ga1-xMnxN（x = 0.07）。 具有约10nm至100nm直径和高达几十微米的直径的纳米线显示出​​具有高于室温的居里温度的铁磁性，高达250开尔德的磁致电阻。

公开(公告)号：WO2004111319A2

公开(公告)日：2004-12-23

申请号：PCT/US2003/039200

申请日：2003-12-08

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  YANG, Peidong ,  HE, Rongrui ,  GOLDBERGER, Joshua ,  FAN, Rong ,  WU, Yiying ,  LI, Deyu ,  MAJUMDAR, Arun

Inventor： YANG, Peidong ,  HE, Rongrui ,  GOLDBERGER, Joshua ,  FAN, Rong ,  WU, Yiying ,  LI, Deyu ,  MAJUMDAR, Arun

IPC: D01F

CPC classification number: C30B29/602 ,  B82Y30/00 ,  C30B29/16 ,  C30B29/406 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar "epitaxial-casting" approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Abstract translation: 描述了制造均匀纳米管的方法，其中纳米管在纳米线模板上合成为鞘，例如使用化学气相沉积工艺。 例如，单晶氧化锌（ZnO）纳米线被用作在其上外延生长氮化镓（GaN）的模板。 然后去除ZnO模板，例如通过热还原和蒸发。 完成的单晶GaN纳米管的内径优选为30nm至200nm，壁厚为5至50nm。 透射电子显微镜研究表明，所得纳米管是具有纤锌矿结构的单晶，沿着<001>方向取向。 本发明例示了具有非层状晶体结构的材料的单晶纳米管。 可以使用类似的“外延铸造”方法来生产其他固体材料和半导体的阵列和单晶纳米管。 此外，还描述了多皮纳米管的制造以及具有多个纵向段的纳米管。

公开(公告)号：WO2005004197A3

公开(公告)日：2005-11-10

申请号：PCT/US2004010854

申请日：2004-04-08

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  HE RONGRUI ,  GOLDBERGER JOSHUA ,  FAN RONG ,  WU YIWING ,  LI DEYU ,  MAJUMDAR ARUN

Inventor： YANG PEIDONG ,  HE RONGRUI ,  GOLDBERGER JOSHUA ,  FAN RONG ,  WU YIWING ,  LI DEYU ,  MAJUMDAR ARUN

IPC: B32B1/08 ,  B32B5/02 ,  B41J2/14 ,  B82B1/00 ,  B82B3/00 ,  C30B25/02 ,  C30B29/60 ,  C30B33/00 ,  G01N27/447 ,  H01L20060101 ,  H01L21/00 ,  H01L21/205 ,  H01L29/06 ,  H01L29/772 ,  H01L31/0328 ,  H01L31/109 ,  H01L33/00 ,  H01L47/00

CPC classification number: C30B29/602 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/02 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/02664 ,  H01L29/0676 ,  H01L29/068 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/855 ,  H01L2924/00

Abstract: Fluidic nanotube devices (29) are described in which a hydrophilic, non-carbon nanotube (152), has its ends fluidly coupled to reservoirs (154 and 156). Source and drain contacts (164 and 166) are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules (160) so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor (132), wherein a tubular transistor (130) is formed. A gate electrode (146) can be attached between source (136) and drain (138) to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Abstract translation: 描述了流体性纳米管装置（29），其中亲水性非碳纳米管（152）的端部流体地联接到储存器（154和156）。 源极和漏极触点（164和166）连接到纳米管的相对端，或者在靠近纳米管开口的每个储存器内。 可以通过测量电流（源 - 漏，离子或组合）来感测分子种类的通过。 管内部可以通过结合结合分子（160）来官能化，使得可以通过检测电流变化来感测不同的分子种类。 纳米管可以是半导体（132），其中形成管状晶体管（130）。 栅极电极（146）可以连接在源极（136）和漏极（138）之间，以控制电流和离子流。 作为示例，描述了集成MEMs开关的电泳阵列实施例。 描述了各种应用，例如：纳米孔，纳米毛细管装置，纳米电泳，DNA序列检测器，免疫传感器，热电装置，光子器件，纳米流体生物分离器，成像装置等。

公开(公告)号：WO2004111319A3

公开(公告)日：2005-07-07

申请号：PCT/US0339200

申请日：2003-12-08

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  HE RONGRUI ,  GOLDBERGER JOSHUA ,  FAN RONG ,  WU YIYING ,  LI DEYU ,  MAJUMDAR ARUN

Inventor： YANG PEIDONG ,  HE RONGRUI ,  GOLDBERGER JOSHUA ,  FAN RONG ,  WU YIYING ,  LI DEYU ,  MAJUMDAR ARUN

IPC: B82B3/00 ,  C30B23/00 ,  C30B23/02 ,  C30B25/04 ,  C30B25/12 ,  C30B25/18 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/60 ,  D01F20060101 ,  D06C3/00 ,  H01L21/00 ,  H01L31/109 ,  H04Q7/00

CPC classification number: C30B29/602 ,  B82Y30/00 ,  C30B29/16 ,  C30B29/406 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar "epitaxial-casting" approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Abstract translation: 描述了制造均匀纳米管的方法，其中纳米管在纳米线模板上合成为鞘，例如使用化学气相沉积工艺。 例如，单晶氧化锌（ZnO）纳米线被用作在其上外延生长氮化镓（GaN）的模板。 然后去除ZnO模板，例如通过热还原和蒸发。 完成的单晶GaN纳米管的内径优选为30nm至200nm，壁厚为5至50nm。 透射电子显微镜研究表明，所得纳米管是具有纤锌矿结构的单晶，沿着<001>方向取向。 本发明例示了具有非层状晶体结构的材料的单晶纳米管。 可以使用类似的“外延铸造”方法来生产其他固体材料和半导体的阵列和单晶纳米管。 此外，还描述了多皮纳米管的制造以及具有多个纵向段的纳米管。

公开(公告)号：WO2007022359A2

公开(公告)日：2007-02-22

申请号：PCT/US2006/032153

申请日：2006-08-16

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  YANG, Peidong ,  GOLDBERGER, Joshua ,  HOCHBAUM, Allon ,  FAN, Rong ,  HE, Rongrui

Inventor： YANG, Peidong ,  GOLDBERGER, Joshua ,  HOCHBAUM, Allon ,  FAN, Rong ,  HE, Rongrui

IPC: H01L21/00

CPC classification number: H01L29/78642 ,  B82Y10/00 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1292 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Vertical integrated field effect transistor circuits and methods are described which are fabricated from Silicon, Germanium, or a combination Silicon and Germanium based on nanowires grown in place on the substrate. By way of example, vertical integrated transistors are formed from one or more nanowires which have been insulated, had a gate deposited thereon, and to which a drain is coupled to the exposed tips of one or more of the nanowires. The nanowires are preferably grown over a surface or according to a desired pattern in response to dispersing metal nanoclusters over the desired portions of the substrate. In one preferred implementation, SiCI4 is utilized as a gas phase precursor during the nanowire growth process. In place nanowire growth is also taught in conjunction with structures, such as trenches, while bridging forms of nanowires are also described.

Abstract translation: 描述了基于硅，锗或基于在衬底上生长的纳米线的硅和锗的组合制造的垂直集成场效应晶体管电路和方法。 作为示例，垂直集成晶体管由已经绝缘的一个或多个纳米线形成，栅极沉积在其上，并且漏极耦合到一个或多个纳米线的暴露尖端。 响应于将金属纳米簇分散在基底的所需部分上，纳米线优选在表面上或根据期望的图案生长。 在一个优选的实施方案中，SiCl 4在纳米线生长过程中用作气相前体。 就纳米线生长而言，还结合诸如沟槽的结构教导，同时还描述了纳米线的桥接形式。

公开(公告)号：WO2005004197A2

公开(公告)日：2005-01-13

申请号：PCT/US2004/010854

申请日：2004-04-08

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  YANG, Peidong ,  HE, Rongrui ,  GOLDBERGER, Joshua ,  FAN, Rong ,  WU, Yiwing ,  LI, Deyu ,  MAJUMDAR, Arun

Inventor： YANG, Peidong ,  HE, Rongrui ,  GOLDBERGER, Joshua ,  FAN, Rong ,  WU, Yiwing ,  LI, Deyu ,  MAJUMDAR, Arun

IPC: H01L

CPC classification number: C30B29/602 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/02 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/02664 ,  H01L29/0676 ,  H01L29/068 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/855 ,  H01L2924/00

Abstract: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected too opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth.

Abstract translation: 描述了流体性纳米管器件，其中亲水性非碳纳米管的端部流体耦合到储存器。 源极和漏极触点连接到纳米管的相对端，或者在靠近纳米管开口的每个储存器内。 可以通过测量电流（源 - 漏，离子或组合）来检测分子种类的通过。 管内部可以通过结合结合分子来官能化，使得可以通过检测电流变化来感测不同的分子种类。 纳米管可以是半导体，其中形成管状晶体管。 栅极电极可以连接在源极和漏极之间，以控制电流和离子流。 作为示例，描述了集成MEMs开关的电泳阵列实施例。 描述了各种应用，例如：纳米孔，纳米毛细管装置，纳米电泳，DNA序列检测器，免疫传感器，热电装置，光子器件，纳米流体生物分离器，成像装置等。

公开(公告)号：WO2007022359A3

公开(公告)日：2009-05-14

申请号：PCT/US2006032153

申请日：2006-08-16

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  GOLDBERGER JOSHUA ,  HOCHBAUM ALLON ,  FAN RONG ,  HE RONGRUI

Inventor： YANG PEIDONG ,  GOLDBERGER JOSHUA ,  HOCHBAUM ALLON ,  FAN RONG ,  HE RONGRUI

IPC: H01L29/06 ,  H01L29/76 ,  H01L31/0328

CPC classification number: H01L29/78642 ,  B82Y10/00 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1292 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78684 ,  H01L29/78687 ,  H01L29/78696

Abstract: Vertical integrated field effect transistor circuits and methods are described which are fabricated from Silicon, Germanium, or a combination Silicon and Germanium based on nanowires grown in place on the substrate. By way of example, vertical integrated transistors are formed from one or more nanowires which have been insulated, had a gate deposited thereon, and to which a drain is coupled to the exposed tips of one or more of the nanowires. The nanowires are preferably grown over a surface or according to a desired pattern in response to dispersing metal nanoclusters over the desired portions of the substrate. In one preferred implementation, SiCI4 is utilized as a gas phase precursor during the nanowire growth process. In place nanowire growth is also taught in conjunction with structures, such as trenches, while bridging forms of nanowires are also described.

Abstract translation: 描述了基于硅，锗或基于在衬底上生长的纳米线的硅和锗的组合制造的垂直集成场效应晶体管电路和方法。 作为示例，垂直集成晶体管由已经绝缘的一个或多个纳米线形成，栅极沉积在其上，并且漏极耦合到一个或多个纳米线的暴露尖端。 响应于将金属纳米簇分散在基底的所需部分上，纳米线优选在表面上或根据期望的图案生长。 在一个优选的实施方案中，SiCl 4在纳米线生长过程中用作气相前体。 就纳米线生长而言，还结合诸如沟槽的结构教导，同时还描述了纳米线的桥接形式。

公开(公告)号：WO2005067547A3

公开(公告)日：2005-07-28

申请号：PCT/US2005/001415

申请日：2005-01-14

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  YANG, Peidong ,  CHOI, Heon-Jin ,  LEE, Sang-Kwon ,  HE, Rongrui ,  ZHANG, Yanfeng ,  KUYKENDAL, Tevye ,  PAUZAUSKIE, Peter

Inventor： YANG, Peidong ,  CHOI, Heon-Jin ,  LEE, Sang-Kwon ,  HE, Rongrui ,  ZHANG, Yanfeng ,  KUYKENDAL, Tevye ,  PAUZAUSKIE, Peter

IPC: H01L21/02

Abstract: A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga 1-x Mn x N (x=0.07) were synthesized. The nanowires, which have diameters of ∼ 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

公开(公告)号：WO2004042785A3

公开(公告)日：2004-12-16

申请号：PCT/US0325628

申请日：2003-08-15

Applicant: UNIV CALIFORNIA ,  YANG PEIDONG ,  LAW MATTHEW ,  HE RONGRUI ,  FAN RONG ,  KIM FRANKLIN

Inventor： YANG PEIDONG ,  LAW MATTHEW ,  HE RONGRUI ,  FAN RONG ,  KIM FRANKLIN

IPC: B81B3/00 ,  C30B23/00 ,  C30B29/60 ,  H01L21/203 ,  H01L21/363 ,  B32B3/26 ,  B32B15/04 ,  B32B18/00

CPC classification number: B81B3/0035 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y30/00 ,  C30B23/00 ,  C30B29/605 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/0259 ,  H01L21/02631 ,  Y10S977/755 ,  Y10S977/81 ,  Y10S977/811 ,  Y10T428/125 ,  Y10T428/29 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. A method for making the nanotape that includes providing plural substrates and placing the substrates in a quartz tube is also described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, AI2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., Co0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, Yba2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, AI, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

Abstract translation: 描述了包括纳米带基底和外延沉积在纳米带基底的平坦表面上的氧化物的两层纳米带。 还描述了用于制造包括提供多个衬底并将衬底放置在石英管中的纳米带的方法。 使用脉冲激光烧蚀沉积工艺将氧化物沉积在衬底上。 纳米带可以由诸如SnO 2，ZnO，MgO，Al 2 O 3，Si，GaN或CdS的材料制成。 而且，烧结氧化物靶可以由诸如TiO 2，掺杂过渡金属的TiO 2（例如，Co 0.05 TiO 0.925），BaTiO 3，ZnO，过渡金属掺杂的ZnO（例如，Mn 0.1 Zn 0.9 O和Ni 0.1 ZnO）等材料制成。 9O），LaMnO3，BaTiO3，PbTiO3，Yba2Cu3Oz或SrCu2O2和其他p型氧化物。 此外，还描述了温度敏感的纳米带/金属双层及其通过热蒸发制造的方法。 诸如Cu，Au，Ti，Al，Pt，Ni等的金属可以沉积在纳米带表面的顶部。 这些装置作为温度的函数显着弯曲并且适合用作例如热激活的纳米级致动器。

公开(公告)号：WO2004042785A2

公开(公告)日：2004-05-21

申请号：PCT/US2003/025628

申请日：2003-08-15

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  YANG, Peidong ,  LAW, Matthew ,  HE, Rongrui ,  FAN, Rong ,  KIM, Franklin

Inventor： YANG, Peidong ,  LAW, Matthew ,  HE, Rongrui ,  FAN, Rong ,  KIM, Franklin

IPC: H01L

CPC classification number: B81B3/0035 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y30/00 ,  C30B23/00 ,  C30B29/605 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/0259 ,  H01L21/02631 ,  Y10S977/755 ,  Y10S977/81 ,  Y10S977/811 ,  Y10T428/125 ,  Y10T428/29 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. A method for making the nanotape that includes providing plural substrates and placing the substrates in a quartz tube is also described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO 2 , ZnO, MgO, AI 2 O 3 , Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO 2 , transition metal doped TiO 2 (e.g., Co 0.05 Ti 0.95 O 2 ), BaTiO 3 , ZnO, transition metal doped ZnO (e.g., Mn 0.1 Zn 0.9 O and Ni 0 . 1 Zn 0 . 9 O), LaMnO 3 , BaTiO 3 , PbTiO 3 , Yba 2 Cu 3 O z , or SrCu 2 O 2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, AI, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

Abstract translation: 描述了包括纳米薄片基底和外延沉积在纳米薄片的平坦表面上的氧化物的双层纳米线。 还描述了一种制造纳米线的方法，其包括提供多个基板并将基板放置在石英管中。 氧化物使用脉冲激光烧蚀沉积工艺沉积在衬底上。 纳米带可以由诸如SnO 2，ZnO，MgO，Al 2 O 3，Si，GaN或CdS的材料制成。 此外，烧结氧化物靶可以由诸如TiO 2，过渡金属掺杂的TiO 2（例如Co 0.05 Ti 0.95 O 2），BaTiO 3，ZnO，过渡金属掺杂的ZnO（例如，Mn0.1Zn0.9O和Ni0.1Zn0）的材料制成。 9O），LaMnO3，BaTiO3，PbTiO3，Yba2Cu3Oz或SrCu2O2等p型氧化物。 另外，描述了温度敏感的纳米银/金属双层及其通过热蒸发制造的方法。 诸如Cu，Au，Ti，Al，Pt，Ni等金属可以沉积在纳米骨表面的顶部。 这样的装置作为温度的函数显着弯曲，并且适合于例如热活化的纳米级致动器。