Abstract:
Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.
Abstract:
A laser package may include a metallic platform, a laser diode mounting insert, a liquid crystal polymer header, an electrical interconnect, a laser diode, an optical crystal, and coupling optics. The laser diode mounting insert, coupling optics and optical crystal are coupled to the metallic platform. The electrical interconnect may have conductive pads positioned on an internal portion of the electrical interconnect and conductive traces originating from the conductive pads and running across an external portion of the electrical interconnect. The internal portion may be coupled to the metallic platform. The laser diode may be mounted to the laser diode mounting insert. The coupling optics may be configured to redirect the output beam toward the optical crystal. The liquid crystal polymer at least partially encloses the metallic platform. The liquid crystal polymer may be coupled to the metallic platform and electrical interconnect via an adhesive promoter.
Abstract:
Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.
Abstract:
Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.
Abstract:
An optical package includes a semiconductor laser, a wavelength conversion device and a MEMS-actuated mirror oriented on a base module to form a folded optical pathway between an output of the semiconductor laser and an input of the wavelength conversion device. An optical assembly is located in a mechanical positioning device and the mechanical positioning device is disposed on the base module along the optical pathway such that the beam of the semiconductor laser passes through the optical assembly, is reflected by the MEMS-actuated mirror back through the optical assembly and into the waveguide portion of the wavelength conversion device. The MEMS-actuated mirror is operable to scan the beam of the semiconductor laser over the input of the wavelength conversion device. The optical assembly may be adjusted along the optical pathway with the mechanical positioning device to focus the beam into the waveguide portion of the wavelength conversion device.
Abstract:
Glass-based micropositioning systems and methods are disclosed. The micropositioning systems and methods utilize microbumps (40) formed in a glass substrate (12 or 100). The microbumps are formed by subjecting a portion of the glass substrate to localized heating, which results in local rapid expansion of glass where the heat was applied. The height and shape of the microbumps depend on the type of glass substrate and the amount and form of heat delivered to the substrate. The microbumps allow for active or passive micropositioning of optical elements, including planar waveguides and optical fibers. Optical assemblies formed using microbump micropositioners are also disclosed.
Abstract:
Glass-based micropositioning systems and methods are disclosed. The micropositioning systems and methods utilize microbumps (40) formed in a glass substrate (12 or 100). The microbumps are formed by subjecting a portion of the glass substrate to localized heating, which results in local rapid expansion of glass where the heat was applied. The height and shape of the microbumps depend on the type of glass substrate and the amount and form of heat delivered to the substrate. The microbumps allow for active or passive micropositioning of optical elements, including planar waveguides and optical fibers. Optical assemblies formed using microbump micropositioners are also disclosed.
Abstract:
An optically active fiber (30) is disclosed for making a fiber laser (18) or an amplifier (16) for optically pumping by a broad area laser diode for operation in the 1.5 micron band. This double-clad structured active fiber (30) has a core (34), doped with an optically excitable erbium ion having a quasi-three-level transition. The core (34) has a core refractive index and a core cross-sectional area. An inner cladding (32) surrounds the core (34). The inner cladding (32) has an inner cladding refractive index less than the core refractive index, an inner cladding cross-sectional area between 2 and 25 times greater than that of the core cross-sectional area, and an aspect ratio greater than 1.5:1. An outer cladding (36) surrounds the inner cladding (32) and has an outer cladding refractive index less than the inner cladding refractive index.
Abstract:
A pseudo-coaxial vertical transition (10) includes a substrate (16). A bump array is disposed in a substantially concentric bump pattern upon the substrate (16) for simulating a pseudo-coaxial vertical electromagnetic wave propagation. The bump array is formed from a centrally disposed bump (32) having a predetermined bump diameter, and a plurality of at least five ground bumps (36) substantially equi-distant and circularly disposed about the centrally disposed bump (32). The predetermined bump diameter and a bump spacing of the centrally disposed bump are determined in relation to the plurality of ground bumps and a dielectric constant of air for providing a characteristic impedance.
Abstract:
A pseudo-coaxial vertical transition (10) includes a substrate (16). A bump array is disposed in a substantially concentric bump pattern upon the substrate (16) for simulating a pseudo-coaxial vertical electromagnetic wave propagation. The bump array is formed from a centrally disposed bump (32) having a predetermined bump diameter, and a plurality of at least five ground bumps (36) substantially equi-distant and circularly disposed about the centrally disposed bump (32). The predetermined bump diameter and a bump spacing of the centrally disposed bump are determined in relation to the plurality of ground bumps and a dielectric constant of air for providing a characteristic impedance.