公开(公告)号：WO2012024310A2

公开(公告)日：2012-02-23

申请号：PCT/US2011/047942

申请日：2011-08-16

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KAIM, Robert ,  SWEENEY, Joseph, D. ,  BYL, Oleg ,  YEDAVE, Sharad, N. ,  JONES, Edward, E. ,  ZOU, Peng ,  TANG, Ying ,  CHAMBERS, Barry, Lewis ,  RAY, Richard, S.

Inventor： KAIM, Robert ,  SWEENEY, Joseph, D. ,  BYL, Oleg ,  YEDAVE, Sharad, N. ,  JONES, Edward, E. ,  ZOU, Peng ,  TANG, Ying ,  CHAMBERS, Barry, Lewis ,  RAY, Richard, S.

IPC: C01B35/06 ,  C01B9/08

CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：WO2007027798A3

公开(公告)日：2007-05-03

申请号：PCT/US2006033899

申请日：2006-08-30

Applicant: ADVANCED TECH MATERIALS ,  OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

Inventor： OLANDER KARL M ,  ARNO JOSE I ,  KAIM ROBERT

IPC: B05D3/06 ,  C23C14/14 ,  C23C14/24 ,  C23C14/46 ,  C23C14/48 ,  H01L21/265 ,  H01L21/425

CPC classification number: H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/082 ,  H01L21/26513 ,  H01L21/2658

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract translation: 使用比三氟化硼更容易裂解的氟化的含硼掺杂剂物质来注入含硼离子的方法。 一种制造半导体器件的方法，包括使用比三氟化硼更容易裂解的氟化的含硼掺杂剂物质来注入含硼离子。 还公开了供应氢化硼前体的系统，形成氢化硼前体的方法和供应氢化硼前体的方法。 在本发明的一个实施方式中，为了制造半导体产品，例如集成电路，产生硼氢化物前体用于簇硼注入。

公开(公告)号：WO2006047410A3

公开(公告)日：2006-05-04

申请号：PCT/US2005/038173

申请日：2005-10-24

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  DIETZ, James ,  BISHOP, Steven, E. ,  MCMANUS, James, V. ,  LURCOTT, Steven, M. ,  WODJENSKI, Michael, J. ,  KAIM, Robert ,  DIMEO, Frank, Jr.

Inventor： DIETZ, James ,  BISHOP, Steven, E. ,  MCMANUS, James, V. ,  LURCOTT, Steven, M. ,  WODJENSKI, Michael, J. ,  KAIM, Robert ,  DIMEO, Frank, Jr.

IPC: H01L21/44 ,  H01L21/31 ,  C23C16/30

Abstract: A monitoring system (100) for monitoring fluid in a fluid supply vessel (22, 24, 26, 28, 108) during operation including dispensing of fluid from the fluid supply vessel. The monitoring system includes (i) one or more sensors (114, 126) for monitoring a characteristic of the fluid supply vessel or the fluid dispensed therefrom, (ii) a data acquisition module (40, 132, 146) operatively coupled to the one or more sensors to receive monitoring data therefrom and responsively generate an output correlative to the characteristic monitored by the one or more sensors, and (iii) a processor (50, 150) and display (52, 150) operatively coupled with the data acquisition module and arranged to process the output from the data acquisition module and responsively output a graphical representation of fluid in the fluid supply vessel, billing documents, usage reports, and/or resupply requests.

公开(公告)号：WO2012074889A2

公开(公告)日：2012-06-07

申请号：PCT/US2011062168

申请日：2011-11-26

Applicant: ADVANCED TECH MATERIALS ,  OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

Inventor： OLANDER W KARL ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  DESPRES JOSEPH R

IPC: H01L21/265 ,  H01J37/30

CPC classification number: C23C14/48 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  Y10T137/8593

Abstract: Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.

Abstract translation: 描述了掺杂源气体供应装置和方法，其中一个或多个掺杂剂源气体供应容器包含在离子注入系统的外壳内，例如在该外壳内的气体箱中。 在一个实施方案中，掺杂剂源气体供应容器位于与离子注入系统的气体箱的远端关系中，在气体箱中具有掺杂剂源气体本地容器，以及供应管线，用于将掺杂剂源气体供应容器互相供应 与掺杂剂源气体本地容器的关系，其中供应管线仅在离子注入系统处于非操作状态时才将掺杂源气体从供应容器流动到局部容器，并且被排空或填充 当离子注入系统处于操作状态时的惰性加压气体。

公开(公告)号：WO2012024310A3

公开(公告)日：2012-05-31

申请号：PCT/US2011047942

申请日：2011-08-16

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  BYL OLEG ,  YEDAVE SHARAD N ,  JONES EDWARD E ,  ZOU PENG ,  TANG YING ,  CHAMBERS BARRY LEWIS ,  RAY RICHARD S

IPC: C01B35/06 ,  C01B9/08

CPC classification number: C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

Abstract translation: 一种同位素富集的含硼化合物，其包含两个或更多个硼原子和至少一个氟原子，其中至少一个硼原子含有浓度或比率大于天然丰度浓度或其比率的所需硼同位素 。 该化合物可以具有B2F4的化学式。 描述了这些化合物的合成方法，以及使用这些化合物的离子注入方法，以及储存和分配容器，其中富含同位素的含硼化合物有利地包含在随后的分配用途中。

公开(公告)号：WO2009102762A2

公开(公告)日：2009-08-20

申请号：PCT/US2009/033754

申请日：2009-02-11

Applicant: SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

Inventor： SWEENEY, Joseph, D. ,  YEDAVE, Sharad, N. ,  BYL, Oleg ,  KAIM, Robert ,  ELDRIDGE, David ,  SERGI, Steven ,  FENG, Lin ,  BISHOP, Steven, E. ,  OLANDER, Karl, W. ,  TANG, Ying

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  C23C14/54 ,  C23C14/564 ,  H01J37/08 ,  H01J37/16 ,  H01J37/18 ,  H01J2237/082 ,  H01J2237/22

Abstract: Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

Abstract translation: 通过适当地控制电弧室中的温度，利用能够在电弧室的离子源中生长/蚀刻长丝的反应清洁试剂来清洁离子注入系统或其组件， 期望的长丝生长或替代长丝蚀刻。 还描述了使用活性气体，例如XeFx，WFx，AsFx，PFx和TaFx，其中x具有化学计量适当的值或数值范围，用于在离子注入机或注入机的部件的原位或异位清洁区域 清洁布置，在环境温度，升高的温度或等离子体条件下。 在特定的反应性清洁剂中，BrF3被描述为可用于清洁离子注入系统或其部件，在原位或非原位清洁装置中。 还描述了一种清洁离子注入系统的前级以至少部分地从所述前级去除电离相关沉积物的方法，包括使所述前级线路与清洁气体接触，其中所述清洁气体与所述沉积物发生化学反应。 还描述了改善离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

公开(公告)号：WO2008121620A1

公开(公告)日：2008-10-09

申请号：PCT/US2008/058150

申请日：2008-03-25

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  KAIM, Robert ,  ARNO, Jose, I. ,  DIETZ, James, A.

Inventor： KAIM, Robert ,  ARNO, Jose, I. ,  DIETZ, James, A.

IPC: C30B31/08 ,  H01L21/265

CPC classification number: C30B31/22 ,  H01L21/26513

Abstract: A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant.

Abstract translation: 用于在半导体衬底中制造掺杂区域的第一种方法包括进行第一注入步骤，其中将碳硼烷簇分子注入到半导体衬底中以形成掺杂区域。 用于制造具有浅结区域的半导体器件的第二种方法包括在容器中提供第一气体和第二气体。 第一气体包括第一掺杂剂，第二气体包括第二掺杂剂。 第二种方法还包括使用离子将第一和第二掺杂剂注入到半导体衬底中。 离子源在植入第一掺杂剂和注入第二掺杂剂的步骤之间不被关闭。

公开(公告)号：WO2007027965A2

公开(公告)日：2007-03-08

申请号：PCT/US2006034135

申请日：2006-08-29

Applicant: ADVANCED TECH MATERIALS ,  ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

Inventor： ARNO JOSE I ,  OLANDER W KARL ,  KAIM ROBERT

IPC: B05D3/00

CPC classification number: H01J37/08 ,  H01J27/02 ,  H01J37/3172 ,  H01J2237/0203

Abstract: A system for delivery of low-pressure dopant gas to a high-voltage ion source in the doping of semiconductor substrates, in which undesired ionization of the gas is suppressed prior to entry into the high-voltage ion source, by modulating electron energy upstream of the high-voltage ion source so that electron acceleration effects are reduced to below a level supporting an electronic ionization cascade. The gas delivery system in a specific application includes a gas flow passage, a voltage generator electrically coupled with at least a portion of the gas flow passage to impose an electric field thereon, and an obstructive structure that is deployed to modulate acceleration length of electrons of the low-pressure gas in relation to ionization potential of the gas, to suppress ionization in the gas flow passage.

Abstract translation: 一种用于在半导体衬底的掺杂中向高电压离子源传送低压掺杂气体的系统，其中在进入高压离子源之前，气体的不期望的电离被抑制，通过调制 高电压离子源，使得电子加速效应降低到低于支持电子离子化级联的水平。 具体应用中的气体输送系统包括气体流动通道，与气体流动通道的至少一部分电耦合以在其上施加电场的电压发生器，以及阻塞结构，其被展开以调制电子的加速度长度 相对于气体的电离电位的低压气体，抑制气体流路中的电离。

公开(公告)号：WO2011106750A3

公开(公告)日：2012-04-05

申请号：PCT/US2011026388

申请日：2011-02-26

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  RAY RICHARD S

Inventor： KAIM ROBERT ,  SWEENEY JOSEPH D ,  AVILA ANTHONY M ,  RAY RICHARD S

IPC: H01L21/265

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

公开(公告)号：WO2007085008A3

公开(公告)日：2008-01-03

申请号：PCT/US2007060810

申请日：2007-01-20

Applicant: ADVANCED TECH MATERIALS ,  KAIM ROBERT ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ARNO JOSE I

Inventor： KAIM ROBERT ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ARNO JOSE I

IPC: C07F5/00

CPC classification number: C23C14/22 ,  C23C16/4485 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006

Abstract: An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.

Abstract translation: 一种离子注入系统（100），其包括适于电离前体蒸汽以形成用于注入衬底（30）的离子的离子源，包括适于保持前体的容器（102）的材料储存和分配设备，以及分配组件 （104,108），其耦合到所述容器以从所述容器分配前体。 分配组件与离子源（10）耦合，并且加热器（106）适于加热容器中的前体，使得从所述装置分配到离子源的前体保持在用于注入离子的气相 从其衍生。 这种系统适用于例如从便携式材料储存和分配装置输送一氯化铟，而不需要将蒸发器整合到离子源的壳体中，并且不需要与三氯化铟的使用有关的处理和处理问题。