Abstract:
Described is an apparatus that comprises: a programmable delay line (PDL) to receive a pulse-width modulation (PWM) signal as input and to generate a first output; a selection unit operable to provide PWM signal or its inverted version as a second output; and a sequential unit coupled to the PDL, the sequential unit to sample the second output with the first output, the sequential unit to generate a pulse-frequency modulation (PFM) output. Described is also a voltage regulator which comprises: mutually coupled on-die inductors for coupling to a load; a bridge, coupled to the mutually coupled on-die inductors, including a low-side switch and a high-side switch; a PWM controller for controlling the low-side and high-side switches during a first load current; and a PFM controller for controlling the low-side and high-side switches during a second load current, the second load current being smaller than the first load current, the PFM controller comprising: a comparator for comparing output voltage of the load with a reference voltage; and a first PDL coupled to the comparator for determining turn-on duration of the high-side switch.
Abstract:
An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
Abstract:
Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.
Abstract:
Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.
Abstract:
An exemplary embodiment may be used to detect an abnormal condition occurring in a tissue of an animal, for example, intra-operative cancer detection. The system and method exploit differences in the electromagnetic (EM) properties between abnormal and normal tissue (e.g., cancerous and healthy tissue). More specifically, by way of time-varying EM fields, electrical eddy currents are generated in tissue samples, and assessed using phase-sensitive detection. Embodied methods and systems utilize the change in phase shift between the voltage in a receiver coil and the voltage in a driver coil to provide a direct and immediate indication of differences in EM properties of specimens.
Abstract:
The systems and methods for enabling a lightweight VMM to efficiently interrupt virtual machines are provided. In some examples, the lightweight VMM is configured to utilize a self IPI to deliver external interrupts to the virtual machines. The self IPI may be generated by writing one or more values, including an identifier of the external interrupt, to an ICR of a programmable interrupt controller. The programmable interrupt controller may retrieve the one or more values from the ICR, identify the external interrupt and process the external interrupt, which culminates in the external interrupt being written to an IDT of a virtual machine targeted for interrupt delivery by the lightweight VMM.
Abstract:
In some embodiments described herein, proposed schemes utilize a duty-cycle sensing technique to detect load current imbalance in each individual inductor, and then adjusts the duty cycles for the specific phases through a digital duty cycle tuner.
Abstract:
The application discloses methods, materials, and compositions for the labeling of molecules, for example, proteins, in living cells or in subcellular compartments of living cells. In particular, the application relates to proteomic analysis methods; materials and compositions and means based on direct tagging of unknown proteins with tagging enzymes (such as biotin ligase or a peroxidase) within the vicinity of a tagging substrate (such as a tyramide) within living cells, with optional targeting to specific subcellular locations by expression of genetic constructs.
Abstract:
In some embodiments, the invention provides a higher efficiency, real-time platform power management architecture for computing platforms. A more direct power management architecture may be provided using integrated voltage regulators and in some embodiments, a direct power management interface (DPMI) as well. Integrated voltage regulators, such as in-silicon voltage regulators (ISVR) can be used to implement quicker, more highly responsive power state transitions.
Abstract:
An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.