公开(公告)号：WO2013062756A1

公开(公告)日：2013-05-02

申请号：PCT/US2012/059400

申请日：2012-10-09

Applicant: APPLIED MATERIALS, INC. ,  UNDERWOOD, Brian S. ,  WANG, Linlin ,  KAMATH, Sanjay ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K.

Inventor： UNDERWOOD, Brian S. ,  WANG, Linlin ,  KAMATH, Sanjay ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K.

IPC: H01L21/318 ,  H01L21/205

CPC classification number: H01L21/02274 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31111

Abstract: Methods are described for forming and curing a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon and carbon containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition chamber temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is treated to remove components which enabled the flowability, but are no longer needed after deposition. Removal of the components increases etch resistance in order to allow the gapfill silicon-carbon-and-nitrogen-containing layer to remain intact during subsequent processing. The treatments have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

Abstract translation: 描述了用于在半导体衬底上形成和固化可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化的氮含量的前体，以加速氮与下层沉积室的含硅和碳的前体的反应 温度。 处理初始可流动的含硅碳和氮的层以去除能够流动的组分，但在沉积后不再需要。 组分的去除增加了耐蚀刻性，以便允许间隙填充硅 - 碳 - 和 - 含氮层在随后的处理过程中保持完整。 已经发现这些处理降低了暴露于大气中的膜的性质的演变。

公开(公告)号：WO2010047953A3

公开(公告)日：2010-06-17

申请号：PCT/US2009059878

申请日：2009-10-07

Applicant: APPLIED MATERIALS INC ,  HUA ZHONG QIANG ,  KAMATH SANJAY ,  LEE YOUNG S ,  YIEH ELLIE Y ,  LE HIEN-MINH HUU ,  PATEL ANJANA M ,  GONDHALEKAR SUDHIR R

Inventor： HUA ZHONG QIANG ,  KAMATH SANJAY ,  LEE YOUNG S ,  YIEH ELLIE Y ,  LE HIEN-MINH HUU ,  PATEL ANJANA M ,  GONDHALEKAR SUDHIR R

IPC: H01L21/3065 ,  H01L21/205 ,  H01L21/302

CPC classification number: B08B7/0035 ,  C23C16/4405

Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

Abstract translation: 一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不想要的沉积物。 在一个实施例中，将基板转移出基板处理室，并且将含氟蚀刻剂气体的流引入到其中形成反应性物质的远程等离子体源中。 产生从远程等离子体源到基板处理室的反应物质的连续流动，同时重复高低压清洁步骤的循环。 在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。 在低压清洁步骤期间，反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

公开(公告)号：WO2010047953A2

公开(公告)日：2010-04-29

申请号：PCT/US2009/059878

申请日：2009-10-07

Applicant: APPLIED MATERIALS, INC. ,  HUA, Zhong, Qiang ,  KAMATH, Sanjay ,  LEE, Young, S. ,  YIEH, Ellie, Y. ,  LE, Hien-Minh, Huu ,  PATEL, Anjana, M. ,  GONDHALEKAR, Sudhir, R.

Inventor： HUA, Zhong, Qiang ,  KAMATH, Sanjay ,  LEE, Young, S. ,  YIEH, Ellie, Y. ,  LE, Hien-Minh, Huu ,  PATEL, Anjana, M. ,  GONDHALEKAR, Sudhir, R.

IPC: H01L21/3065 ,  H01L21/302 ,  H01L21/205

CPC classification number: B08B7/0035 ,  C23C16/4405

Abstract: A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.

Abstract translation: 远程等离子体工艺，用于在处理设置在衬底处理室中的衬底之后从衬底处理室的一个或多个内表面移除不需要的沉积堆积物。 在一个实施例中，将衬底转移出衬底处理室，并将含氟蚀刻剂气体流引入形成反应物质的远程等离子体源中。 产生从远程等离子体源到基板处理室的反应性物质的连续流动，同时重复高压和低压清洁步骤的循环。 在高压清洁步骤期间，活性物质流入衬底处理室，同时衬底处理室内的压力保持在4-15托之间。 在低压清洁步骤中，活性物质流入基板处理室，同时将基板处理室的压力降低高压清洁步骤中达到的高压的至少50％。