公开(公告)号：WO2008105989A3

公开(公告)日：2009-02-19

申请号：PCT/US2008001349

申请日：2008-02-01

Applicant: CYMER INC ,  BYKANOV ALEXANDER N ,  BOWERING NORBERT R ,  FOMENKOV IGOR V ,  BRANDT DAVID C ,  ERSHOV ALEXANDER I ,  KHODYKIN OLEH V ,  PARTLO WILLIAM N

Inventor： BYKANOV ALEXANDER N ,  BOWERING NORBERT R ,  FOMENKOV IGOR V ,  BRANDT DAVID C ,  ERSHOV ALEXANDER I ,  KHODYKIN OLEH V ,  PARTLO WILLIAM N

IPC: G01J3/10

CPC classification number: G03F7/70916 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70908 ,  G03F7/70983 ,  H05G2/003 ,  H05G2/008

Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic, hi one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预选值以下。在一个实施方案中，气体可以包含氢气，并且在特定的实施方案中，气体可以包含大于50体积％的氢气。

公开(公告)号：WO2007005414A3

公开(公告)日：2008-10-02

申请号：PCT/US2006024959

申请日：2006-06-27

Applicant: CYMER INC ,  BOWERING NORBERT R ,  KHODYKIN OLEH ,  BYKANOV ALEXANDER N ,  FOMENKOV IGOR V

Inventor： BOWERING NORBERT R ,  KHODYKIN OLEH ,  BYKANOV ALEXANDER N ,  FOMENKOV IGOR V

IPC: G01J3/10 ,  H05G2/00

CPC classification number: H05G2/006 ,  B82Y10/00 ,  G21K2201/061 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and / or Indium.

Abstract translation: 公开了一种EUV光源，其可以包括至少一个具有表面的光学元件，例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面，源材料可以基本上由锡化合物组成，并且可以通过沉积在光学元件上的等离子体形成而产生锡屑，此外，锡化合物可以包括有效蚀刻沉积在光学上的锡的元素 元素表面。 锡化合物可以包括SnBr 4，SnBr 2和SnH 4。 在另一方面，EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料，源材料包含锡和至少一种其它金属，例如具有镓和/或铟的锡。

公开(公告)号：WO2007005409A2

公开(公告)日：2007-01-11

申请号：PCT/US2006024941

申请日：2006-06-27

Applicant: CYMER INC ,  BYKANOV ALEXANDER N ,  ALGOTS MARTIN J ,  KHODYKIN OLEH ,  HEMBERG OSCAR

Inventor： BYKANOV ALEXANDER N ,  ALGOTS MARTIN J ,  KHODYKIN OLEH ,  HEMBERG OSCAR

IPC: G21G4/00

CPC classification number: H05G2/001

Abstract: An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site. The apparatus and method may further comprise a droplet detection mechanism that may comprise a droplet detection radiation detector positioned to detect droplet detection radiation reflected from a plasma source material droplet.

Abstract translation: 公开了一种EUV发光系统和方法，其可以包括产生等离子体源材料的液滴发生器，目标液滴朝向等离子体源材料靶照射部位附近传播; 驱动激光器 具有第一操作中心波长范围的驱动激光聚焦光学元件; 具有第二操作中心波长范围的液滴检测辐射源; 驱动激光操纵元件，其包括在第一波长范围的至少一部分内具有高度反射性的材料，并且在第二中心波长范围的至少一部分内具有高度透射性; 液滴检测辐射瞄准机构，其引导液滴检测辐射通过驱动激光转向元件和透镜，以聚焦在液滴发生器和照射部位之间的选定液滴检测位置。 该装置和方法还可以包括液滴检测机构，其可以包括液滴检测放射线检测器，其被定位成检测从等离子体源物质液滴反射的液滴检测辐射。

公开(公告)号：WO2008048415A3

公开(公告)日：2008-08-14

申请号：PCT/US2007020897

申请日：2007-09-27

Applicant: CYMER INC A NEVADA CORP ,  BYKANOV ALEXANDER N ,  FOMENKOV IGOR V ,  KHODYKIN OLEH V ,  ERSHOV ALEXANDER I

Inventor： BYKANOV ALEXANDER N ,  FOMENKOV IGOR V ,  KHODYKIN OLEH V ,  ERSHOV ALEXANDER I

IPC: G01J3/10

CPC classification number: H05G2/003 ,  G03F7/70033 ,  H01S3/0064 ,  H01S3/073 ,  H01S3/0805 ,  H01S3/08054 ,  H01S3/08059 ,  H01S3/083 ,  H01S3/10092 ,  H01S3/105 ,  H01S3/1066 ,  H01S3/115 ,  H01S3/121 ,  H01S3/127 ,  H01S3/2232 ,  H01S3/2316 ,  H01S3/2325 ,  H01S3/2383 ,  H05G2/008

Abstract: An LPP EUV light source is disclosed having an optic positioned in the plasma chamber for reflecting EUV light generated therein and a laser input window. For this aspect, the EUV light source may be configured to expose the optic to a gaseous etchant pressure for optic cleaning while the window is exposed to a lower gaseous etchant pressure to avoid window coating deterioration. In another aspect, an EUV light source may comprise a target material positionable along a beam path to participate in a first interaction with light on the beam path; an optical amplifier; and at least one optic directing photons scattered from the first interaction into the optical amplifier to produce a laser beam on the beam path for a subsequent interaction with the target material to produce an EUV light emitting plasma.

Abstract translation: 公开了一种LPP EUV光源，其具有位于等离子体室中的光学器件，用于反射在其中产生的EUV光和激光输入窗口。 对于该方面，EUV光源可以被配置为将窗口暴露于更低的气体蚀刻剂压力以将窗口暴露于气体蚀刻剂压力以进行光学清洁，以避免窗口涂层变质。 在另一方面，EUV光源可以包括沿着光束路径定位以参与与光束路径上的光的第一相互作用的目标材料; 光放大器; 以及至少一个光导向光子从第一相互作用散射到光放大器中以在光束路径上产生激光束，用于随后与目标材料的相互作用以产生EUV发光等离子体。

公开(公告)号：WO2007005414A2

公开(公告)日：2007-01-11

申请号：PCT/US2006/024959

申请日：2006-06-27

Applicant: CYMER, INC. ,  BOWERING, Norbert, R. ,  KHODYKIN, Oleh ,  BYKANOV, Alexander, N. ,  FOMENKOV, Igor, V.

Inventor： BOWERING, Norbert, R. ,  KHODYKIN, Oleh ,  BYKANOV, Alexander, N. ,  FOMENKOV, Igor, V.

IPC: G01J1/00

CPC classification number: H05G2/006 ,  B82Y10/00 ,  G21K2201/061 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and / or Indium.

Abstract translation: 公开了一种EUV光源，其可以包括具有表面的至少一个光学元件，例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面，源材料可以基本上由锡化合物组成，并且可以通过沉积在光学元件上的等离子体形成而产生锡屑，此外，锡化合物可以包括有效地从光学蚀刻沉积的锡的元素 元素表面。 锡化合物可以包括SnBr4，SnBr2和SnH4。 另一方面，EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料，源材料包含锡和至少一种其它金属，例如锡与镓和/或铟。

公开(公告)号：WO2007005409A3

公开(公告)日：2007-01-11

申请号：PCT/US2006/024941

申请日：2006-06-27

Applicant: CYMER, INC. ,  BYKANOV, Alexander, N. ,  ALGOTS, Martin, J. ,  KHODYKIN, Oleh ,  HEMBERG, Oscar

Inventor： BYKANOV, Alexander, N. ,  ALGOTS, Martin, J. ,  KHODYKIN, Oleh ,  HEMBERG, Oscar

IPC: G21G4/00

Abstract: An EUV light generation system and method is disclosed that may comprise a droplet generator producing plasma source material target droplets traveling toward the vicinity of a plasma source material target irradiation site; a drive laser; a drive laser focusing optical element having a first range of operating center wavelengths; a droplet detection radiation source having a second range of operating center wavelengths; a drive laser steering element comprising a material that is highly reflective within at least some part of the first range of wavelengths and highly transmissive within at least some part of the second range of center wavelengths; a droplet detection radiation aiming mechanism directing the droplet detection radiation through the drive laser steering element and the lens to focus at a selected droplet detection position intermediate the droplet generator and the irradiation site. The apparatus and method may further comprise a droplet detection mechanism that may comprise a droplet detection radiation detector positioned to detect droplet detection radiation reflected from a plasma source material droplet.

公开(公告)号：WO2006093781A3

公开(公告)日：2006-09-08

申请号：PCT/US2006/006408

申请日：2006-02-24

Applicant: CYMER, INC. ,  BOWERING, Norbert, R. ,  HANSSON, Bjorn, A., M. ,  BYKANOV, Alexander, N. ,  KHODYKIN, Oleh ,  ERSHOV, Alexander, I. ,  PARTLO, William, N.

Inventor： BOWERING, Norbert, R. ,  HANSSON, Bjorn, A., M. ,  BYKANOV, Alexander, N. ,  KHODYKIN, Oleh ,  ERSHOV, Alexander, I. ,  PARTLO, William, N.

IPC: G01J1/00

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

公开(公告)号：WO2006093781A2

公开(公告)日：2006-09-08

申请号：PCT/US2006006408

申请日：2006-02-24

Applicant: CYMER INC ,  BOWERING NORBERT R ,  HANSSON BJORN A M ,  BYKANOV ALEXANDER N ,  KHODYKIN OLEH ,  ERSHOV ALEXANDER I ,  PARTLO WILLIAM N

Inventor： BOWERING NORBERT R ,  HANSSON BJORN A M ,  BYKANOV ALEXANDER N ,  KHODYKIN OLEH ,  ERSHOV ALEXANDER I ,  PARTLO WILLIAM N

CPC classification number: G03F7/70925 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70166 ,  G03F7/70916 ,  G21K2201/06 ,  H05G2/001

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

Abstract translation: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面，公开了一种屏蔽件，其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片，同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面，公开了一种屏蔽件，其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面，公开了一种系统，其将屏蔽件从光源等离子体室移动到清洁室，其中屏蔽件被清洁。

公开(公告)号：WO2009117048A2

公开(公告)日：2009-09-24

申请号：PCT/US2009/000994

申请日：2009-02-17

Applicant: CYMER, INC. ,  VASCHENKO, Georgiy, O. ,  BYKANOV, Alexander, N. ,  BOWERING, Norbert, R. ,  BRANDT, David, C. ,  ERSHOV, Alexander, I. ,  SIMMONS, Rodney, D. ,  KHODYKIN, Oleh, V. ,  FOMENKOV, Igor, V.

Inventor： VASCHENKO, Georgiy, O. ,  BYKANOV, Alexander, N. ,  BOWERING, Norbert, R. ,  BRANDT, David, C. ,  ERSHOV, Alexander, I. ,  SIMMONS, Rodney, D. ,  KHODYKIN, Oleh, V. ,  FOMENKOV, Igor, V.

IPC: G21K5/00

CPC classification number: H05G2/003 ,  H05G2/006 ,  H05G2/008

Abstract: Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Abstract translation: 这里公开的设备可以包括EUV反射光学元件，该EUV反射光学元件具有限定旋转轴线和圆形外围的旋转表面。 光学器件可以被定位成相对于水平面以非零角度倾斜轴线，并且在外围投影界定水平面中的区域的情况下建立水平面中的外围的垂直投影。 该装置可以进一步包括输送目标材料的系统，该系统具有目标材料释放点，该目标材料释放点位于水平平面中并且位于该区域之外并且由周边投影和生成用于照射目标材料以产生激光束的激光束 EUV排放。

公开(公告)号：WO2009085094A2

公开(公告)日：2009-07-09

申请号：PCT/US2008/013416

申请日：2008-12-05

Applicant: CYMER, INC. ,  BOWERING, Norbert, R. ,  BYKANOV, Alexander, N. ,  KHODYKIN, Oleh, V. ,  FOMENKOV, Igor, V

Inventor： BOWERING, Norbert, R. ,  BYKANOV, Alexander, N. ,  KHODYKIN, Oleh, V. ,  FOMENKOV, Igor, V

IPC: G01J1/42 ,  C23C16/22

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G01J1/429 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70975 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps / acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps / acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。