SUBSTRATE CLEANING TECHNIQUES EMPLOYING MULTI-PHASE SOLUTION
    1.
    发明申请
    SUBSTRATE CLEANING TECHNIQUES EMPLOYING MULTI-PHASE SOLUTION 审中-公开
    使用多相解决方案的基板清洗技术

    公开(公告)号:WO2008136895A1

    公开(公告)日:2008-11-13

    申请号:PCT/US2008/004488

    申请日:2008-04-04

    Abstract: A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.

    Abstract translation: 一种用于清洁其上具有颗粒物质的半导体晶片的相对表面的方法和系统。 该方法包括产生流体和衬底之间的相对运动。 相对运动在与相对表面之一的法线横向的方向上,并且产生两个间隔开的流动。 每个流体与相对于与多个流动的剩余流动相邻的相对表面不同的一个相对表面相邻。 流体具有夹带在其中的耦合元件,并且建立相对运动以在联接元件的子集上施加足够的阻力以产生该流体内该子集的耦合元件的运动。 以这种方式,将一定量的阻力赋予颗粒物质以使颗粒物质相对于基底移动。

    PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING
    3.
    发明申请
    PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING 审中-公开
    沉积过程中保持基底表面湿润

    公开(公告)号:WO2011072268A1

    公开(公告)日:2011-06-16

    申请号:PCT/US2010/059966

    申请日:2010-12-10

    Abstract: Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.

    Abstract translation: 用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。 然后用清洗液在无电沉积模块中冲洗基材的表面。 控制冲洗以防止表面的脱湿,使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。 将基底从无电沉积模块移除,同时将转印膜保持在衬底的表面上。 衬底表面上的转印膜防止了衬底表面的干燥,使得去除被弄湿。 一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中,同时将转印膜保持在衬底的表面上。

    METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME
    7.
    发明申请
    METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME 审中-公开
    从半导体晶片上去除材料的方法和执行该方法的装置

    公开(公告)号:WO2007005230A3

    公开(公告)日:2007-04-26

    申请号:PCT/US2006023354

    申请日:2006-06-15

    Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.

    Abstract translation: 压力保持在一定体积内,在该体积内半导体晶片所处的压力足以将前体流体的液态保持为非牛顿流体。 前体流体布置成接近待从半导体晶片移除的材料,同时保持前体流体处于液态。 压力在半导体晶片所处的体积内减小,使得体积内设置在晶片上的前体流体转变成非牛顿流体。 前体流体的膨胀和前体流体相对于晶片在转变成非牛顿流体期间的运动导致所产生的非牛顿流体从半导体晶片上去除材料。

    METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME
    8.
    发明申请
    METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER AND APPARATUS FOR PERFORMING THE SAME 审中-公开
    从半导体波导中去除材料的方法及其实施方法

    公开(公告)号:WO2007005230A2

    公开(公告)日:2007-01-11

    申请号:PCT/US2006/023354

    申请日:2006-06-15

    Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.

    Abstract translation: 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置,同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低,使得设置在体积内的晶片上的前体流体转变成非牛顿流体。 在转化成非牛顿流体期间,前体流体的膨胀和前体流体相对于晶片的移动导致了非牛顿流体从半导体晶片去除材料。

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